Infineon Technologies BAR6304WE6327HTSA1

Overview

BAR6304WE6327HTSA1 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.21 pF capacitance at 5 V/1 MHz, 1.2 Ω forward resistance at 5 mA/100 MHz, and insertion loss of 0.11 dB at 1.8 GHz - deployed in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR6304WE6327HTSA1 datasheet, BAR6304WE6327HTSA1 pinout, BAR6304WE6327HTSA1 application, or BAR6304WE6327HTSA1 equivalent, key selection criteria include RF isolation above 12.3 dB at 1.8 GHz, reverse voltage rating of 50 V, thermal resistance of 380 K/W, and SOD323 package compatibility with high-density RF layouts.

Technical Context

This PIN diode operates as a voltage-controlled RF switch where forward bias reduces series impedance (rf ≤ 1.2 Ω) while reverse bias maximizes isolation via low junction capacitance (CT ≤ 0.21 pF). Its I-region width of 4.5 µm enables fast carrier lifetime (τrr = 75 ns) and stable performance up to 3 GHz.

Designed for series-switch topology in 50 Ω systems, it delivers <0.15 dB insertion loss at 1.8 GHz under 1 mA bias and >17.9 dB isolation at 0.9 GHz - critical for LTE/WiFi band-select filtering and T/R switching in compact transceivers.

Key Specifications

Pinout & Package

SOD323 (SC-90) surface-mount package: 2-terminal leadless device with anode and cathode on opposite ends; no internal bonding wires; compatible with reflow soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with BAR6304WE6327HTSA1, BAR6302WE6327HTSA1 offers better thermal management but sacrifices high-frequency isolation due to higher inductance, while SMV1232-079LF trades off RF performance for ruggedness - making BAR6304 optimal for sub-6 GHz mobile front-end integration.

Availability

BAR6304WE6327HTSA1 is available at Aetrix Electronics and suitable for cellular front-end modules, Wi-Fi antenna tuning circuits, automotive telematics units, and GNSS L1 band filtering requiring stable component supply across production lifecycles.

Supply support for BAR6304WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

This device belongs to the BAR63 family of high-speed silicon PIN diodes engineered specifically for RF signal routing in wireless infrastructure, mobile handsets, and automotive connectivity systems.

FAQ

What is the maximum RF frequency supported by BAR6304WE6327HTSA1?

The BAR6304WE6327HTSA1 is characterized up to 3 GHz with verified performance metrics: insertion loss of 0.15 dB at 1.8 GHz and isolation of 10 dB at 2.45 GHz. Its 0.21 pF capacitance and 1.2 Ω forward resistance maintain functional switching behavior through the entire 5G n78 band (3.3–3.8 GHz), though datasheet validation stops at 3 GHz.

Can BAR6304WE6327HTSA1 be used in shunt configuration?

No - BAR6304WE6327HTSA1 is specified and characterized only for series-switch operation. Its SOD323 package lacks dedicated ground terminal, and electrical data (e.g., RP, CT curves) assume series topology. Shunt use would require redesign of matching networks and invalidate all published isolation/loss values.

Is BAR6304WE6327HTSA1 suitable for DC biasing above 100 mA?

No - absolute maximum forward current is 100 mA at 25 °C. At higher currents, junction temperature exceeds 150 °C even with ideal heatsinking due to its 380 K/W thermal resistance. For >100 mA applications, BAR6306WE6327HTSA1 (same package, 250 mW Ptot) is recommended.

Does BAR6304WE6327HTSA1 require external DC blocking capacitors?

Yes - because it conducts DC when forward-biased, external AC coupling capacitors (typically 100 pF X7R in 0201) are mandatory on both anode and cathode sides in RF signal paths to prevent bias leakage into adjacent circuitry and maintain 50 Ω impedance continuity.