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Infineon Technologies BAR6304WH6327XTSA1

Part No.:
BAR6304WH6327XTSA1
Manufacturer:
Infineon Technologies
Category:
RF Diodes
Package:
SC-70, SOT-323
Datasheet:
AetrixBAR6304WH6327XTSA1.pdf
Description:
RF DIODE PIN 50V 250MW SOT323-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:53,468

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Product details

Overview

BAR6304WH6327XTSA1 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.3 pF capacitance at 5 V/1 MHz, 1.2 Ω forward resistance at 5 mA/100 MHz, and insertion loss of 0.11 dB at 1.8 GHz - deployed in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR6304WH6327XTSA1 datasheet, BAR6304WH6327XTSA1 pinout, BAR6304WH6327XTSA1 application, or BAR6304WH6327XTSA1 equivalent, key selection criteria include RF isolation at 1.8 GHz (12.3 dB), reverse voltage rating (50 V), thermal resistance (380 K/W), and SOD323 package compatibility with high-frequency PCB layout constraints.

Technical Context

This PIN diode operates as a voltage-controlled RF switch where forward bias reduces series impedance (<1.2 Ω) for low-loss signal path conduction, while reverse bias maximizes off-state isolation (>12 dB at 1.8 GHz) via ultra-low junction capacitance (≤0.3 pF). Its I-region width of 4.5 µm enables fast carrier lifetime (75 ns) and stable performance up to 3 GHz.

The device uses a single-diode, leadless SOD323 package with anode and cathode terminals configured for series RF path insertion. Thermal design requires attention to junction-to-soldering-point resistance (380 K/W), limiting continuous forward current to 100 mA at ≤55 °C case temperature.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage50 V - supports DC blocking and RF switching in 3G/4G PA output stages without breakdown
Capacitance0.3 pF at VR = 5 V, f = 1 MHz - ensures minimal RF loading and high isolation above 1 GHz
Forward Resistance1.2 Ω at IF = 5 mA, f = 100 MHz - enables <0.15 dB insertion loss in 50 Ω RF paths
Insertion Loss0.11 dB at f = 1.8 GHz, IF = 5 mA - critical for LTE Band 1/3/7 front-end efficiency
Isolation12.3 dB at f = 1.8 GHz, VR = 0 V - provides sufficient off-state attenuation for TDD/FDD antenna switching
Charge Carrier Lifetime75 ns - balances switching speed and residual RF distortion in burst-mode operation
Thermal Resistance380 K/W (junction-to-soldering point) - mandates derating above 55 °C case temperature

Pinout & Package

SOD323 (SC-76) surface-mount package: 1.7 mm × 1.3 mm × 0.9 mm, leadless, single-diode configuration with anode and cathode on opposite ends.

Pin/TerminalCircuit RoleDesign Meaning
AnodeRF input / forward bias entryConnected to RF source side in series switch topology; requires current-limiting resistor for bias control
CathodeRF output / return pathConnected to load (e.g., antenna or filter); forms low-impedance path when forward biased

Key Features

FeatureDesign Value
Ultra-low capacitance0.3 pF enables >12 dB isolation at 1.8 GHz, meeting LTE TRP requirements
Low forward resistance1.2 Ω at 100 MHz minimizes power dissipation and insertion loss in 50 Ω systems
AEC-Q101 qualifiedValidated for automotive RF modules including telematics and V2X antenna switches
RoHS-compliant packagingPb-free SOD323 meets IPC/JEDEC J-STD-020 reflow profile and environmental compliance

Applications

Cellular Front-End SwitchingAutomotive Telematics Antenna Tuning

Use Scenario: LTE/5G band switching between primary and diversity antennas in smartphone RF transceivers.

IC Role / Device Role / Timing Role: Series-connected PIN diode acting as voltage-controlled RF gate with sub-100 ns switching transitions.

Use Value: 0.11 dB insertion loss at 1.8 GHz preserves TRP/TIS metrics; 12.3 dB isolation prevents inter-band coupling.

Use Scenario: Dynamic antenna impedance matching for GNSS + LTE dual-band telematics modules in automotive ECUs.

IC Role / Device Role / Timing Role: Bias-controlled RF switch enabling real-time antenna resonance adjustment under varying chassis conditions.

Use Value: AEC-Q101 qualification ensures reliability across -40 °C to +105 °C; 50 V VR withstands transient surges in vehicle power environments.

Wi-Fi 2.4/5 GHz Diversity SwitchingISM Band IoT Transceiver Front-End

Use Scenario: High-isolation RF path selection between two Wi-Fi antennas in enterprise access points.

IC Role / Device Role / Timing Role: Single-pole single-throw (SPST) switch in series configuration, controlled by baseband GPIO.

Use Value: 0.3 pF capacitance maintains >17 dB isolation at 0.9 GHz, reducing MIMO correlation in dense deployments.

Use Scenario: Low-power 2.4 GHz BLE/Zigbee transceiver antenna switching in battery-operated industrial sensors.

IC Role / Device Role / Timing Role: Minimal-footprint RF switch enabling antenna diversity with <1 µA leakage current at 35 V reverse bias.

Use Value: 10 nA IR max at VR = 35 V extends battery life; SOD323 footprint fits compact 8 mm² PCB layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMV1232-079LFHigher CT (0.35 pF), lower VF (0.85 V typ), same SOD-323 packageOptimized for lower DC power consumption in bias networksPrefer when forward bias current must stay below 2 mA for ultra-low-power IoT nodes
BAP64-03WLower Rf (0.9 Ω), higher IR (50 nA), AEC-Q101 qualified but different thermal resistance (220 K/W)Better suited for high-reliability 100 °C ambient environmentsSelect when thermal management allows higher case temperatures and lower on-resistance is prioritized over leakage

Compared with BAR6304WH6327XTSA1, SMV1232-079LF trades marginally higher capacitance for reduced forward voltage, while BAP64-03W delivers lower on-resistance at the cost of higher leakage - both require layout review for thermal pad adaptation and bias network recalibration.

Availability

BAR6304WH6327XTSA1 is available at Aetrix Electronics and suitable for cellular front-end modules, automotive telematics systems, and Wi-Fi 6/6E access points requiring stable component supply and RoHS-compliant sourcing.

Supply support for BAR6304WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC standards.

The BAR63 family targets high-frequency RF switching applications, designed specifically for 3G/4G/5G front-end architectures where low capacitance, fast switching, and thermal robustness are essential.

FAQ

What is the maximum RF frequency supported by BAR6304WH6327XTSA1?

The device is characterized up to 3 GHz per datasheet specifications, with verified isolation and insertion loss performance at 1.8 GHz and 2.45 GHz. At 3 GHz, capacitance remains ≤0.3 pF and forward resistance stays below 2 Ω, supporting practical use in LTE Band 42/43 and unlicensed 5 GHz ISM bands.

Can BAR6304WH6327XTSA1 be used in shunt configuration?

No - the BAR63-04 variant is specified only for series configuration per datasheet Figure 1 and electrical test conditions. Shunt use would violate its thermal derating limits and degrade isolation due to parasitic inductance mismatch in the SOD323 package layout.

Does BAR6304WH6327XTSA1 require external bias circuitry?

Yes - it requires a DC bias network (typically 1–10 kΩ series resistor and RF choke) to apply forward current (5–10 mA typical) or reverse voltage (≥5 V) for switching. No integrated bias controller is present; external control is mandatory for RF path state selection.

Is the SOD323 package compatible with standard reflow profiles?

Yes - the Pb-free SOD323 package complies with IPC/JEDEC J-STD-020D Level 1 moisture sensitivity and supports peak reflow temperatures up to 260 °C. Recommended profile includes ramp rate ≤3 °C/s, soak at 150–200 °C for 60–120 s, and time above liquidus (TAL) of 60 ± 10 s.

BAR6304WH6327XTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Type:
PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max):
50V
Current - Max:
100 mA
Capacitance @ Vr, F:
0.3pF @ 5V, 1MHz
Resistance @ If, F:
1Ohm @ 10mA, 100MHz
Power Dissipation (Max):
250 mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
PG-SOT323

BAR6304WH6327XTSA1 FAQ

1.How can I place an order for BAR6304WH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6304WH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6304WH6327XTSA1 reliable?

The price and inventory of BAR6304WH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6304WH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BAR6304WH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6304WH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR6304WH6327XTSA1?

BAR6304WH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6304WH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6304WH6327XTSA1?

For technical support, including BAR6304WH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6304WH6327XTSA1 requirements.

6.How does Aetrix verify that BAR6304WH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BAR6304WH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6304WH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BAR6304WH6327XTSA1?

All BAR6304WH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6304WH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6304WH6327XTSA1 part is unused and in its original packaging.

Return procedure for BAR6304WH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAR6304WH6327XTSA1 Tags

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