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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAR6305E6327HTSA1

Name: BAR6305E6327HTSA1
Brand: Infineon Technologies
SKU: BAR6305E6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAR6305E6327HTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BAR6305E6327HTSA1.pdf

Description:: RF DIODE PIN 50V 250MW SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BAR6305E6327HTSA1 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.3 pF capacitance at 100 MHz, 1.2 Ω forward resistance at 100 MHz/5 mA, and ≤0.11 dB insertion loss at 1.8 GHz/5 mA. It supports up to 3 GHz operation with 50 V reverse voltage rating and AEC-Q101 qualification for automotive RF front-end modules.

For engineers reviewing the BAR6305E6327HTSA1 datasheet, BAR6305E6327HTSA1 pinout, BAR6305E6327HTSA1 application, or BAR6305E6327HTSA1 equivalent, key selection criteria include RF isolation at 1.8 GHz (12.3 dB), low-charge-carrier lifetime (75 ns), SOD323 package thermal resistance (≤380 K/W), and series-inductance-limited impedance matching in 50 Ω systems.

Technical Context

This PIN diode operates as a voltage-controlled RF switch where forward bias reduces series impedance for signal path conduction, while reverse bias maximizes shunt isolation via depletion-layer capacitance control. Its I-region width of 4.5 µm enables fast carrier sweep-out and sub-100 ns turn-off.

The device uses a single-diode, leadless SOD323 package with anode and cathode terminals configured for series RF path placement. Thermal design requires junction-to-solder-point resistance ≤380 K/W, limiting continuous power dissipation to 250 mW at ≤55 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
Reverse Voltage	50 V - maximum DC blocking capability before breakdown in RF T/R switch off-state
Capacitance @ 100 MHz	0.3 pF - enables >12 dB isolation at 1.8 GHz in 50 Ω system
Forward Resistance @ 100 MHz	1.2 Ω - contributes to ≤0.11 dB insertion loss at 1.8 GHz/5 mA bias
Charge Carrier Lifetime	75 ns - determines RF switching speed and harmonic generation limit
Insertion Loss @ 1.8 GHz	0.11 dB @ 5 mA - quantifies signal attenuation in on-state RF path
Isolation @ 1.8 GHz	12.3 dB @ 0 V - measures off-state RF signal rejection in series topology
Thermal Resistance R_thJS	≤380 K/W - defines junction-to-solder-point temperature rise per watt in SOD323

Pinout & Package

SOD323 surface-mount package with gull-wing leads, 1.3 mm × 0.85 mm footprint, and 0.95 mm height. RoHS-compliant, lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
Anode	RF input / forward bias entry	Connects to RF source side in series-switch configuration; controls conduction onset under positive bias
Cathode	RF output / return path	Routes switched RF signal to load; forms low-impedance path when forward biased

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive RF modules requiring reliability across -55 °C to 125 °C operating range
Low series inductance	1.8 nH - minimizes self-resonance impact up to 3 GHz in 50 Ω matched layouts
Ultra-low capacitance	0.3 pF @ 100 MHz - ensures high off-state isolation without external tuning capacitors
Fast switching	75 ns carrier lifetime - supports TDMA burst-mode RF switching in cellular infrastructure
High power handling	250 mW P_tot - sustains continuous RF envelope peaks in LTE/WiFi front-ends

Applications

Cellular Front-End Switching

Automotive Radar Transmit/Receive

Use Scenario: High-isolation antenna switching between LTE bands in smartphone transceiver modules.

IC Role / Device Role / Timing Role: Series-connected RF switch controlling signal path between PA output and antenna port.

Use Value: 12.3 dB isolation at 1.8 GHz prevents inter-band coupling; 0.11 dB insertion loss preserves EVM and PA efficiency.

Use Scenario: Transmit/receive path selection in 77 GHz ADAS radar modules using frequency-modulated continuous-wave (FMCW) signals.

IC Role / Device Role / Timing Role: Low-inductance series switch enabling rapid T/R state transitions during chirp cycles.

Use Value: 75 ns carrier lifetime allows <100 ns switching within 10 µs chirp period; AEC-Q101 qualification ensures field reliability.

Wi-Fi 5/6 Band Selection

IoT Wireless Gateway RF Routing

Use Scenario: Dual-band (2.4/5 GHz) antenna sharing in Wi-Fi 6 access points with concurrent multi-band operation.

IC Role / Device Role / Timing Role: Single-pole double-throw (SPDT) switch element in discrete RF routing network.

Use Value: 0.3 pF capacitance maintains impedance match across both bands; SOD323 footprint enables compact layout near RF connectors.

Use Scenario: Dynamic antenna selection among BLE, Zigbee, and LoRa radios in smart utility gateways.

IC Role / Device Role / Timing Role: Low-power RF path selector controlled by MCU GPIO with minimal bias current.

Use Value: 1.2 Ω forward resistance enables <0.15 dB loss at 2.4 GHz with only 5 mA bias; RoHS compliance meets global IoT deployment requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SMV1232-079LF	0.25 pF C_T, 0.9 Ω r_f, SOT-23 package, no AEC-Q101 qualification	Higher isolation at 2.4 GHz but lacks automotive qualification and has higher thermal resistance (450 K/W)	Select for non-automotive 2.4 GHz ISM band use where lower capacitance outweighs qualification needs
BAP64-03W	0.35 pF C_T, 1.5 Ω r_f, SOD323, AEC-Q101 qualified, 100 mA I_F	Higher forward resistance increases insertion loss by ~0.03 dB at 1.8 GHz; identical thermal and package specs	Select when higher surge current tolerance (100 mA vs. 50 mA pulsed) is required in same footprint

Compared with SMV1232-079LF and BAP64-03W, BAR6305E6327HTSA1 delivers optimal balance of automotive qualification, 1.2 Ω on-resistance, and 0.3 pF capacitance in SOD323-making it preferred for cost-sensitive, thermally constrained 1.8–2.4 GHz front-ends requiring AEC-Q101 compliance.

Availability

BAR6305E6327HTSA1 is available at Aetrix Electronics and suitable for cellular front-end switching, automotive radar T/R path selection, and Wi-Fi band routing requiring stable component supply across industrial and automotive production programs.

Supply support for BAR6305E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with leadership in high-reliability discrete devices.

BAR6305E6327HTSA1 belongs to the BAR63 family of high-speed silicon PIN diodes designed specifically for RF signal routing in automotive radar, cellular infrastructure, and wireless connectivity systems.

FAQ

What is the maximum RF frequency supported by BAR6305E6327HTSA1?

The device is characterized for operation up to 3 GHz, with measured isolation and insertion loss data provided at 0.9, 1.8, and 2.45 GHz. Performance remains usable beyond 2.45 GHz, but isolation degrades to 10 dB at 2.45 GHz and insertion loss rises above 0.15 dB above 2 GHz under 5 mA bias.

Can BAR6305E6327HTSA1 be used in shunt configuration?

No-this part is specified and characterized exclusively for series-switch applications. Its SOD323 package and internal structure lack the terminal symmetry and capacitance balance required for effective shunt switching; datasheet curves and application notes assume series placement in 50 Ω transmission lines.

What is the recommended DC bias for optimal 1.8 GHz performance?

5 mA forward current delivers the best trade-off: 0.11 dB insertion loss and 12.3 dB isolation at 1.8 GHz. Increasing to 10 mA lowers insertion loss marginally (0.10 dB) but reduces isolation to 11.5 dB due to conductivity modulation effects in the I-region.

Does BAR6305E6327HTSA1 require external matching components?

No external matching is needed for basic series-switch operation in 50 Ω systems. The 1.8 nH series inductance and 0.3 pF capacitance are balanced to maintain broadband match from 800 MHz to 2.4 GHz; layout must minimize trace inductance (<0.5 nH) to preserve specified RF performance.

BAR6305E6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Diode Type:: PIN - 1 Pair Common Cathode

Voltage - Peak Reverse (Max):: 50V

Current - Max:: 100 mA

Capacitance @ Vr, F:: 0.3pF @ 5V, 1MHz

Resistance @ If, F:: 1Ohm @ 10mA, 100MHz

Power Dissipation (Max):: 250 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOT23

BAR6305E6327HTSA1 FAQ

1.How can I place an order for BAR6305E6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6305E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6305E6327HTSA1 reliable?

The price and inventory of BAR6305E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6305E6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BAR6305E6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6305E6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR6305E6327HTSA1?

BAR6305E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6305E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6305E6327HTSA1?

For technical support, including BAR6305E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6305E6327HTSA1 requirements.

6.How does Aetrix verify that BAR6305E6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAR6305E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6305E6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAR6305E6327HTSA1?

All BAR6305E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6305E6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6305E6327HTSA1 part is unused and in its original packaging.

Return procedure for BAR6305E6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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