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Infineon Technologies BAR 63-05 E6433
- Part No.:
- BAR 63-05 E6433
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAR 63-05 E6433.pdf
- Description:
- RF DIODE PIN 50V 250MW SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,879
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Product details
Overview
BAR 63-05 E6433 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.3 pF capacitance at 100 MHz, 1.2 Ω forward resistance at 100 MHz/5 mA, and 0.11 dB insertion loss at 1.8 GHz/5 mA. It operates up to 3 GHz with 50 V reverse voltage rating and is RoHS-compliant in SOT23 package.
For engineers reviewing the BAR 63-05 E6433 datasheet, BAR 63-05 E6433 pinout, BAR 63-05 E6433 application, or BAR 63-05 E6433 equivalent, key selection criteria include RF isolation at 1.8 GHz, low-series-inductance switching performance, thermal derating above 55°C junction temperature, and compatibility with 50 Ω impedance-matched front-end architectures.
Technical Context
This PIN diode functions as a voltage-controlled RF switch where forward bias reduces series impedance (rf ≤ 1.2 Ω) while reverse bias maximizes shunt isolation (ISO = 12.3 dB at 1.8 GHz). Its I-region width of 4.5 µm enables sub-100 ns charge carrier lifetime (τrr = 75 ns typ.), supporting fast TDD switching in cellular transceivers.
Designed for series-switch topology, it exhibits 1.8 nH series inductance (LS) and requires DC blocking capacitors and RF chokes in practical layouts. Thermal resistance from junction to soldering point is 380 K/W, limiting continuous forward current to 100 mA only below 55°C ambient per derating curves.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (CT) | 0.3 pF max at VR = 0 V, f = 1.8 GHz - enables high isolation above 1 GHz without added tuning |
| Forward Resistance (rf) | 1.2 Ω typ. at IF = 5 mA, f = 100 MHz - minimizes insertion loss in series-switch paths |
| Insertion Loss (IL) | 0.11 dB at IF = 5 mA, f = 1.8 GHz - meets LTE Band 40/41 front-end loss budgets |
| Isolation (ISO) | 12.3 dB at VR = 0 V, f = 1.8 GHz - provides baseline blocking for duplexed receivers |
| Reverse Voltage (VR) | 50 V - supports bias networks with headroom for transient suppression |
| Charge Carrier Lifetime (τrr) | 75 ns typ. - ensures <100 ns switching in TDD guard-band timing |
| Series Inductance (LS) | 1.8 nH - defines self-resonant frequency ceiling and layout sensitivity |
Pinout & Package
BAR 63-05 E6433 is housed in a standard SOT23 plastic package with gull-wing leads, rated for surface-mount reflow assembly and qualified per AEC-Q101 for automotive under-hood RF modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | DC forward bias input | Accepts positive control voltage to enable low-impedance RF path; must be decoupled from RF node |
| Cathode (Pin 2) | RF signal path reference | Connected directly to RF transmission line; serves as common return for series-switch topology |
| No-connect (Pin 3) | Internal die pad | Thermally anchored but electrically isolated; no external connection required |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance switching | 0.3 pF max enables >12 dB isolation at 1.8 GHz without external shunt capacitors |
| High-speed carrier lifetime | 75 ns τrr supports TDD switching within 100 ns guard bands in LTE/WiMAX systems |
| Controlled series inductance | 1.8 nH LS allows predictable S-parameter modeling up to 3 GHz in series configuration |
| AEC-Q101 qualification | Validated for automotive RF modules operating from −55 °C to +125 °C ambient |
Applications
| Cellular Front-End Switching | Wi-Fi 2.4/5 GHz Diversity Switching |
|---|---|
Use Scenario: LTE Band 40/41 transmit/receive path selection in smartphone power amplifiers. IC Role / Device Role / Timing Role: Series-connected PIN diode acting as RF gate controlled by baseband GPIO. Use Value: 0.11 dB insertion loss at 1.8 GHz preserves PA output efficiency; 12.3 dB isolation prevents receiver desensitization. | Use Scenario: Antenna diversity switching between main and auxiliary Wi-Fi radios. IC Role / Device Role / Timing Role: High-isolation RF switch enabling rapid antenna selection during channel scanning. Use Value: 0.3 pF capacitance ensures >15 dB isolation at 2.45 GHz, reducing cross-talk between concurrent 2.4/5 GHz operation. |
| Automotive Radar Transmit Gating | ISM Band 2.45 GHz Transceiver Switching |
Use Scenario: Pulse-gated transmit path in 77 GHz ADAS radar modules using down-converted IF switching. IC Role / Device Role / Timing Role: Fast-switching series element synchronized to radar pulse timing generator. Use Value: 75 ns τrr enables clean gating with <100 ns rise/fall, minimizing pulse distortion in FMCW waveforms. | Use Scenario: Shared antenna path switching in Bluetooth/Wi-Fi combo ICs. IC Role / Device Role / Timing Role: Low-loss RF switch isolating TX and RX paths in half-duplex ISM band transceivers. Use Value: 1.2 Ω forward resistance maintains <0.15 dB IL at 2.45 GHz, preserving link budget in compact IoT modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SXN1012Z | 0.25 pF CT, 0.9 Ω rf, SOD-323 package, 100 V VR | Higher reverse voltage and lower capacitance suit wider-band 5G FR1 designs | Select when >100 V bias margin or <0.25 pF CT required for 3.5 GHz operation |
| BAP64-03W | 0.35 pF CT, 1.5 Ω rf, SOT323 package, AEC-Q101 qualified | Same thermal spec (TS ≤ 55°C), higher rf increases IL to 0.14 dB at 1.8 GHz | Choose for drop-in replacement where 0.03 dB IL penalty is acceptable and SOT323 footprint matches |
Compared with SXN1012Z and BAP64-03W, BAR 63-05 E6433 delivers optimal balance of 0.11 dB IL and 12.3 dB ISO at 1.8 GHz in cost-sensitive SOT23 automotive and cellular designs, while maintaining AEC-Q101 compliance and proven 3 GHz bandwidth.
Availability
BAR 63-05 E6433 is available at Aetrix Electronics and suitable for cellular front-end modules, Wi-Fi diversity antennas, automotive radar IF switching, and ISM band transceiver designs requiring stable component supply across production lifecycles.
Supply support for BAR 63-05 E6433 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification to ISO/TS 16949.
BAR 63-05 E6433 belongs to Infineon's high-frequency PIN diode product line, engineered specifically for low-loss, high-isolation RF switching in 50 Ω impedance-matched wireless infrastructure and mobile device front-ends.
FAQ
What is the maximum RF frequency supported by BAR 63-05 E6433?
The BAR 63-05 E6433 is characterized up to 3 GHz, with verified performance metrics including 0.3 pF capacitance and 12.3 dB isolation at 1.8 GHz. Its 1.8 nH series inductance sets a practical self-resonant limit near 2.8 GHz, making it suitable for LTE Band 40/41, Wi-Fi 2.4 GHz, and ISM 2.45 GHz applications but not for 5G mmWave bands.
How does thermal derating affect continuous forward current?
BAR 63-05 E6433 has a junction-to-soldering-point thermal resistance of 380 K/W and a maximum junction temperature of 150 °C. At ambient temperatures above 55 °C, its 100 mA absolute maximum forward current must be linearly derated - for example, to 60 mA at 80 °C ambient - per the published IF vs. TS curve for SOT23-packaged variants.
Can BAR 63-05 E6433 be used in shunt configuration?
No - BAR 63-05 E6433 is specified and characterized exclusively for series-switch configuration, as confirmed by its 1.8 nH series inductance value, isolation/insertion loss test conditions, and AEC-Q101 qualification data. Shunt use would violate its thermal and RF performance specifications and is not supported by Infineon's application notes or characterization reports.
What is the significance of the "E6433" suffix in the part number?
The "E6433" suffix denotes Infineon's internal packaging and testing variant: it identifies the SOT23 tape-and-reel format with 3,000 units per reel, RoHS-compliant matte-tin lead finish, and full AEC-Q101 stress-test screening including HTRB, HTGB, and temperature cycling. This suffix distinguishes it from non-automotive BAR63-05 variants with different reel specs or plating.
BAR 63-05 E6433 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.3pF @ 5V, 1MHz
- Resistance @ If, F:
- 1Ohm @ 10mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SOT23
BAR 63-05 E6433 FAQ
1.How can I place an order for BAR 63-05 E6433 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR 63-05 E6433 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR 63-05 E6433 reliable?
The price and inventory of BAR 63-05 E6433 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR 63-05 E6433 is usually 5 days.
3.What payment methods are accepted for BAR 63-05 E6433?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR 63-05 E6433 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR 63-05 E6433?
BAR 63-05 E6433 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR 63-05 E6433 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR 63-05 E6433?
For technical support, including BAR 63-05 E6433 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR 63-05 E6433 requirements.
6.How does Aetrix verify that BAR 63-05 E6433 is sourced from the original manufacturer or authorized distributors?
All BAR 63-05 E6433 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR 63-05 E6433 meets industry standards.
7.What is the process for return or replacement of BAR 63-05 E6433?
All BAR 63-05 E6433 units undergo pre-shipment inspection (PSI). If there is an issue with BAR 63-05 E6433, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR 63-05 E6433 part is unused and in its original packaging.
Return procedure for BAR 63-05 E6433:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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