Infineon Technologies BAR6305WE6327HTSA1

Overview

BAR6305WE6327HTSA1 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.3 pF capacitance at 5 V/1 MHz, 1.2 Ω forward resistance at 5 mA/100 MHz, and insertion loss of 0.11 dB at 1.8 GHz - deployed in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR6305WE6327HTSA1 datasheet, BAR6305WE6327HTSA1 pinout, BAR6305WE6327HTSA1 application, or BAR6305WE6327HTSA1 equivalent, key selection criteria include RF isolation above 12.3 dB at 1.8 GHz, reverse voltage rating of 50 V, thermal resistance of ≤180 K/W, and SOD323 package compatibility with high-frequency PCB layout constraints.

Technical Context

This PIN diode operates as a voltage-controlled RF switch where forward bias reduces series impedance (rf ≤ 1.2 Ω), while reverse bias maximizes isolation via low junction capacitance (CT ≤ 0.3 pF) and high reverse parallel resistance (RP ≥ 15 kΩ at 1 GHz). Its I-region width of 4.5 µm enables fast carrier lifetime (τrr = 75 ns) for sub-ns switching transitions.

Designed for DC–3 GHz operation, it supports series-switch topology with Z₀ = 50 Ω matching, delivering <0.15 dB insertion loss at 1.8 GHz under 1 mA bias and >17.9 dB isolation at 0.9 GHz - critical for LTE/WiFi coexistence filtering and T/R switching in compact transceivers.

Key Specifications

Pinout & Package

SOD323 (SC-76) surface-mount package: 2-terminal leadless device with anode and cathode exposed on opposite ends of the molded body; footprint compatible with automated placement and reflow soldering per IPC-7351B.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with SKY13370-374LF and BAP64-03W, BAR6305WE6327HTSA1 offers optimal balance of 50 V robustness, 0.3 pF capacitance, and SOD323 footprint - making it preferred for cost-sensitive, high-volume cellular and automotive RF front-ends requiring proven AEC-Q101 reliability.

Availability

BAR6305WE6327HTSA1 is available at Aetrix Electronics and suitable for cellular front-end modules, Wi-Fi antenna tuning networks, ISM band transceivers, and automotive RKE receivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAR6305WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with leadership in high-reliability discrete and integrated solutions.

The BAR63 family targets RF signal conditioning in wireless infrastructure and mobile devices, emphasizing low-loss switching, high isolation, and AEC-Q101 qualification for automotive-grade deployment.

FAQ

What is the maximum RF frequency supported by BAR6305WE6327HTSA1?

The device is characterized up to 3 GHz with verified performance metrics: insertion loss ≤0.15 dB and isolation ≥10 dB at 2.45 GHz, and full AC parameter validation at 100 MHz–1.8 GHz. Its 4.5 µm I-region and low parasitic inductance support reliable operation through the entire 2.4 GHz ISM and UMTS/LTE bands.

Does BAR6305WE6327HTSA1 require a series current-limiting resistor?

Yes - the diode must be biased with a series resistor to limit forward current to ≤100 mA. At 10 mA bias, typical forward voltage is 0.95 V; using a 100 Ω resistor with 3.3 V supply yields ~23 mA, staying within safe operating area while enabling optimal RF resistance of ~1.2 Ω at 100 MHz.

Is BAR6305WE6327HTSA1 qualified for automotive applications?

Yes - it is qualified per AEC-Q101 for stress testing including HTSL, TC, and HTRB. The "W" suffix in the part number denotes AEC-Q101 compliance; this specific variant (BAR6305W) meets automotive requirements for under-hood and infotainment RF modules operating from –40 °C to +125 °C.

How does BAR6305WE6327HTSA1 compare to BAR6302 variants in RF performance?

BAR6305W has higher reverse voltage (50 V vs. 30 V), slightly higher capacitance (0.3 pF vs. 0.21 pF), and lower thermal resistance (≤180 K/W vs. ≤140 K/W for BAR6302V). It trades marginal CT increase for greater voltage headroom and improved power handling - ideal for PA output switching where 50 V margin is critical.