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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAR6305WH6327XTSA1

Name: BAR6305WH6327XTSA1
Brand: Infineon Technologies
SKU: BAR6305WH6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAR6305WH6327XTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BAR6305WH6327XTSA1.pdf

Description:: RF DIODE PIN 50V 250MW SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BAR6305WH6327XTSA1 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.3 pF capacitance at 5 V/1 MHz, 1.2 Ω forward resistance at 5 mA/100 MHz, and insertion loss of 0.11 dB at 1.8 GHz - deployed in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR6305WH6327XTSA1 datasheet, BAR6305WH6327XTSA1 pinout, BAR6305WH6327XTSA1 application, or BAR6305WH6327XTSA1 equivalent, key selection criteria include RF isolation above 12.3 dB at 1.8 GHz, reverse voltage rating of 50 V, thermal resistance of 180 K/W, and SOD323 package compatibility with high-density RF layouts.

Technical Context

This PIN diode operates as a voltage-controlled RF switch in series topology, where forward bias reduces series impedance (rf ≤ 1.2 Ω) and reverse bias maximizes shunt isolation (ISO ≥ 12.3 dB @ 1.8 GHz). Its I-region width of 4.5 µm enables fast carrier lifetime (τ_rr = 75 ns) and stable performance up to 3 GHz.

Designed for DC–3 GHz operation, it maintains low insertion loss (≤ 0.15 dB @ 1.8 GHz, 1 mA) and high reverse parallel resistance (≥ 15 kΩ @ 1 GHz), making it suitable for T/R switching in LTE/Wi-Fi transceivers without external matching networks.

Key Specifications

Parameter	Value and Actual Design Meaning
Reverse Voltage	50 V - supports bias rail headroom in 28 V RF power amplifier control paths
Capacitance (VR=5 V, 1 MHz)	0.3 pF - enables minimal loading on 50 Ω RF traces up to 2.45 GHz
Forward Resistance (IF=5 mA, 100 MHz)	1.2 Ω - ensures <0.15 dB insertion loss in series-switched antenna paths
Isolation (VR=0 V, 1.8 GHz)	12.3 dB - provides sufficient Tx/Rx port separation in FEMs
Charge Carrier Lifetime	75 ns - balances switching speed and RF linearity for burst-mode LTE
Junction Temperature	150 °C - allows operation in sealed RF modules with limited airflow
Thermal Resistance (J–S)	180 K/W - compatible with standard SOD323 PCB copper pour for thermal relief

Pinout & Package

SOD323 surface-mount package (2.0 × 1.25 × 0.9 mm), leadless, single-diode configuration with anode and cathode terminals exposed on opposite ends of the molded body.

Pin/Terminal	Circuit Role	Design Meaning
Anode	RF input / forward bias entry	Connected to RF source side in series switch; requires DC blocking if AC-coupled
Cathode	RF output / return path	Connected to load (e.g., antenna); forms low-impedance path under forward bias

Key Features

Feature	Design Value
Low Capacitance	0.3 pF at 5 V enables broadband matching without parasitic resonance below 3 GHz
High Isolation	12.3 dB @ 1.8 GHz meets LTE Band 40/41 T/R isolation requirements
Fast Switching	75 ns carrier lifetime supports TD-LTE frame timing with <1 µs transition
RoHS Compliant	Pb-free SOD323 package qualified per AEC-Q101 for automotive RF modules

Applications

Cellular Front-End Module

Wi-Fi 2.4 GHz Antenna Tuning

Use Scenario: Dynamic antenna impedance matching in multi-band smartphones supporting LTE and 5G NR.

IC Role / Device Role / Timing Role: Series-connected RF switch controlling signal path between PA output and antenna feed point.

Use Value: 0.11 dB insertion loss at 1.8 GHz preserves PA efficiency; 12.3 dB isolation prevents Tx leakage into Rx chain.

Use Scenario: Reconfigurable antenna coupling in dual-band Wi-Fi routers with MIMO support.

IC Role / Device Role / Timing Role: Voltage-controlled RF shunt switch enabling real-time antenna pattern adjustment.

Use Value: 0.3 pF capacitance minimizes detuning effect; 75 ns switching accommodates OFDM symbol timing.

Automotive Telematics Unit

GNSS L1 Band Signal Routing

Use Scenario: RF path selection between embedded cellular modem and external roof-mounted antenna in ADAS systems.

IC Role / Device Role / Timing Role: AEC-Q101-qualified series switch ensuring reliable T/R handover under vibration and thermal cycling.

Use Value: 150 °C junction rating and 180 K/W R_thJS sustain operation in engine bay-adjacent enclosures.

Use Scenario: Low-loss signal routing between GNSS receiver IC and active ceramic patch antenna.

IC Role / Device Role / Timing Role: High-isolation series switch isolating L1 band (1575.42 MHz) from interference sources during acquisition.

Use Value: 17.9 dB isolation @ 0.9 GHz exceeds GPS L1 minimum SNR margin; 50 V VR withstands ESD transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SMV1232-079LF	0.25 pF CT, 0.9 Ω rf, SOT-23 package, no AEC-Q101 qualification	Lacks automotive qualification; higher thermal resistance (220 K/W)	Preferred for cost-sensitive consumer Wi-Fi designs where AEC-Q101 is not required
BAP64-03W	0.35 pF CT, 1.5 Ω rf, same SOD323 package, AEC-Q101 qualified	Higher insertion loss (0.18 dB @ 1.8 GHz) limits use in high-efficiency PA paths	Used when wider reverse voltage margin (60 V) is needed over BAR6305WH6327XTSA1's 50 V rating

Compared with SMV1232-079LF and BAP64-03W, BAR6305WH6327XTSA1 delivers optimal balance of low loss (0.11 dB), high isolation (12.3 dB), and automotive qualification in the smallest footprint - making it preferred for space-constrained, thermally demanding cellular FEMs.

Availability

BAR6305WH6327XTSA1 is available at Aetrix Electronics and suitable for cellular front-end modules, Wi-Fi antenna tuning circuits, automotive telematics units, and GNSS signal routing requiring stable component supply across production lifecycles.

Supply support for BAR6305WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification to ISO/TS 16949.

This device belongs to the BAR63 family of high-frequency PIN diodes, engineered specifically for low-loss, high-isolation RF switching in compact wireless infrastructure and mobile terminal applications.

FAQ

What is the maximum RF frequency supported by BAR6305WH6327XTSA1?

BAR6305WH6327XTSA1 is characterized for operation up to 3 GHz, with verified performance metrics including 12.3 dB isolation at 1.8 GHz and 10 dB isolation at 2.45 GHz. Its 0.3 pF capacitance and 1.2 Ω forward resistance maintain usable RF switching behavior through the entire LTE and Wi-Fi 2.4 GHz bands.

Does BAR6305WH6327XTSA1 require external DC blocking capacitors?

No - the device is designed for direct series insertion in RF paths with integrated DC bias injection. Its anode and cathode terminals accept forward bias via RF chokes or bias tees; no external DC blocking is needed unless the RF source/load has incompatible DC potential.

Is BAR6305WH6327XTSA1 suitable for pulsed RF applications?

Yes - its 75 ns charge carrier lifetime and 150 °C junction temperature rating support pulsed operation with duty cycles down to 0.005. Pulse current capability scales with pulse width per Infineon's permissible pulse load curves, enabling use in radar and burst-mode communication systems.

How does BAR6305WH6327XTSA1 compare to BAR6302WH6327XTSA1 in layout compatibility?

Both share the SOD323 package and identical pad layout, but BAR6305WH6327XTSA1 offers lower capacitance (0.3 pF vs. 0.35 pF) and lower forward resistance (1.2 Ω vs. 1.4 Ω), resulting in 0.04 dB lower insertion loss at 1.8 GHz - requiring no PCB redesign when upgrading within the same footprint.

BAR6305WH6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Diode Type:: PIN - 1 Pair Common Cathode

Voltage - Peak Reverse (Max):: 50V

Current - Max:: 100 mA

Capacitance @ Vr, F:: 0.3pF @ 5V, 1MHz

Resistance @ If, F:: 1Ohm @ 10mA, 100MHz

Power Dissipation (Max):: 250 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOT23

BAR6305WH6327XTSA1 FAQ

1.How can I place an order for BAR6305WH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6305WH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6305WH6327XTSA1 reliable?

The price and inventory of BAR6305WH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6305WH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BAR6305WH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6305WH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR6305WH6327XTSA1?

BAR6305WH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6305WH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6305WH6327XTSA1?

For technical support, including BAR6305WH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6305WH6327XTSA1 requirements.

6.How does Aetrix verify that BAR6305WH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BAR6305WH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6305WH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BAR6305WH6327XTSA1?

All BAR6305WH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6305WH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6305WH6327XTSA1 part is unused and in its original packaging.

Return procedure for BAR6305WH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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