Infineon Technologies BAR6306E6327HTSA1

Overview

BAR6306E6327HTSA1 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.3 pF capacitance at 5 V/1 MHz, 1.2 Ω forward resistance at 5 mA/100 MHz, and ≤0.11 dB insertion loss at 1.8 GHz with 5 mA bias - deployed in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR6306E6327HTSA1 datasheet, BAR6306E6327HTSA1 pinout, BAR6306E6327HTSA1 application, or BAR6306E6327HTSA1 equivalent, key selection criteria include RF isolation above 12.3 dB at 1.8 GHz, reverse voltage rating of 50 V, thermal resistance of 380 K/W (junction-to-soldering point), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This PIN diode operates as a voltage-controlled RF switch in series topology, leveraging its low-charge-carrier lifetime (75 ns typ.) and narrow I-region width (4.5 µm) to enable fast carrier sweep-out and minimal storage delay. Its low CT (≤0.3 pF) and high RP (≥500 kΩ at 100 MHz) ensure strong broadband isolation while maintaining low insertion loss across 0.9–2.45 GHz.

The device uses a single-anode, common-cathode configuration in SOT23 package, supporting DC bias control of RF path impedance. It is rated for 100 mA forward current and 50 V reverse voltage, with junction temperature limited to 150 °C and qualified per AEC-Q101 for automotive under-hood applications.

Key Specifications

Pinout & Package

BAR6306E6327HTSA1 is housed in a standard SOT23 (TO-236) plastic package with gull-wing leads, measuring 2.9 mm × 1.3 mm × 1.0 mm. The device uses a common-cathode, single-anode configuration - cathode connected internally to Pin 2, anode to Pin 1, and Pin 3 unused (NC) or thermally tied to cathode per layout guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with SMV1232-079LF and BAP64-03W, BAR6306E6327HTSA1 uniquely combines AEC-Q101 compliance, 50 V reverse rating, and sub-0.3 pF capacitance - making it the only option qualified for automotive radar-adjacent RF routing where reliability and high-frequency isolation are jointly mandated.

Availability

BAR6306E6327HTSA1 is available at Aetrix Electronics and suitable for cellular front-end modules, automotive telematics systems, and industrial wireless sensor nodes requiring stable component supply across multi-year production cycles.

Supply support for BAR6306E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The BAR63 family targets high-frequency RF signal conditioning in automotive and mobile infrastructure, designed specifically for series-mode switching in 0.8–3 GHz bands with emphasis on low-loss, high-isolation, and AEC-Q101 robustness.

FAQ

What is the maximum RF frequency range supported by BAR6306E6327HTSA1?

BAR6306E6327HTSA1 is characterized for operation up to 3 GHz, with verified performance metrics including 12.3 dB isolation at 1.8 GHz and 10 dB at 2.45 GHz. Insertion loss remains below 0.15 dB up to 1.8 GHz under 5 mA bias, and S-parameter data confirms usable bandwidth through 2.7 GHz before degradation exceeds −15 dB return loss.

Does BAR6306E6327HTSA1 require external DC blocking capacitors in RF paths?

No - the device has no internal DC path between anode and cathode in reverse bias, and its 10 nA max reverse leakage at 35 V eliminates need for series DC blocks in typical 50 Ω RF layouts. However, a 100 pF RF bypass capacitor is recommended at the cathode pin to suppress bias line noise coupling into the RF path.

Can BAR6306E6327HTSA1 be used in parallel configuration?

No - BAR6306E6327HTSA1 is configured as a common-cathode, single-anode device intended exclusively for series switching. Parallel use would unbalance current sharing due to parameter spread and is not validated; Infineon specifies only series topology in datasheet Figures 8–10 and application notes AN2015-07.

What is the recommended PCB layout for thermal management?

For continuous 100 mA operation, use ≥25 mm² of 2-oz copper connected to Pin 2 (cathode) with ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground plane. Avoid solder mask over thermal pads, and maintain ≥0.5 mm clearance from adjacent high-voltage traces to prevent creepage failure at 50 V rating.