Infineon Technologies BAR6306WE6327HTSA1

Overview

BAR6306WE6327HTSA1 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.3 pF capacitance at 5 V/1 MHz, 1.2 Ω forward resistance at 5 mA/100 MHz, and ≤0.11 dB insertion loss at 1.8 GHz - deployed in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR6306WE6327HTSA1 datasheet, BAR6306WE6327HTSA1 pinout, BAR6306WE6327HTSA1 application, or BAR6306WE6327HTSA1 equivalent, key selection criteria include RF isolation at 1.8 GHz, low-series inductance (1.4 nH), AEC-Q101 qualification, thermal resistance (180 K/W), and SOT-323 package compatibility with high-frequency PCB layout constraints.

Technical Context

This PIN diode operates as a voltage-controlled RF switch in series topology, leveraging its low I-region width (4.5 µm) and charge carrier lifetime (75 ns) to enable fast turn-on/turn-off transitions up to 3 GHz. Its reverse parallel resistance exceeds 500 kΩ at 100 MHz and remains ≥15 kΩ at 1 GHz, supporting high off-state isolation.

The device uses a common-anode dual-diode configuration in SOT-323, with integrated series inductance (1.4 nH) and thermally optimized die attach for junction temperature limits up to 150 °C - critical for sustained RF power handling in automotive telematics transceivers.

Key Specifications

Pinout & Package

BAR6306WE6327HTSA1 is housed in a RoHS-compliant SOT-323 (SC-70) surface-mount package with gull-wing leads, optimized for RF impedance control and thermal dissipation in dense layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with SMV1232-011LF and BAP64-03W, BAR6306WE6327HTSA1 uniquely balances AEC-Q101 compliance, 1.4 nH LS for broadband matching, and 12.3 dB isolation at 1.8 GHz - making it the preferred choice for automotive-grade cellular telematics switching where thermal stability and RF consistency are non-negotiable.

Availability

BAR6306WE6327HTSA1 is available at Aetrix Electronics and suitable for cellular front-end modules, automotive telematics antennas, and Wi-Fi 6E band selection requiring stable component supply across production lifecycles.

Supply support for BAR6306WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF components for wireless infrastructure and vehicle connectivity.

BAR6306WE6327HTSA1 belongs to the BAR63 family of high-frequency PIN diodes engineered specifically for series-mode RF switching in automotive-qualified and cellular infrastructure applications up to 3 GHz.

FAQ

What is the maximum RF frequency supported by BAR6306WE6327HTSA1?

BAR6306WE6327HTSA1 is characterized for operation up to 3 GHz, with verified isolation of 12.3 dB at 1.8 GHz and 10 dB at 2.45 GHz. Its 0.3 pF capacitance and 1.4 nH series inductance maintain usable S-parameters through the entire LTE, 5G NR, and Wi-Fi 6E spectrum - confirmed per Infineon's EHB07147 pulse load and S21 measurement data.

Is BAR6306WE6327HTSA1 suitable for automotive applications?

Yes - BAR6306WE6327HTSA1 is explicitly qualified to AEC-Q101 Rev D for stress testing including HTGB, AC/DC life test, and temperature cycling. Its 150 °C junction rating, 180 K/W thermal resistance, and SOT-323 package meet requirements for under-dash telematics modules operating continuously at 105 °C ambient.

How does the common-anode configuration affect circuit implementation?

The common-anode (Pin 1 & Pin 3) / shared-cathode (Pin 2) topology enables true series switching: RF signal flows Anode1 → Cathode → Anode2, allowing bidirectional blocking with single-bias control. This eliminates need for external series chokes and simplifies layout versus discrete dual-diode solutions - validated in Infineon's BAR63-06W reference schematics.

What is the typical forward voltage at 100 mA DC?

At IF = 100 mA and TA = 25 °C, VF is 0.95 V (typical) and 1.2 V (max), consistent with silicon PIN diode physics and verified in Infineon's DC characteristics table. This low VF enables efficient biasing from 1.8–3.3 V rails without significant power loss - critical for thermally constrained RF front ends.