Infineon Technologies BAR6306WH6327XTSA1

Overview

BAR6306WH6327XTSA1 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.3 pF capacitance at 100 MHz, 1.2 Ω forward resistance at 100 MHz/5 mA, and ≤0.11 dB insertion loss at 1.8 GHz/5 mA. It operates up to 3 GHz with 50 V reverse voltage rating and AEC-Q101 qualification for automotive RF front-end modules.

For engineers reviewing the BAR6306WH6327XTSA1 datasheet, BAR6306WH6327XTSA1 pinout, BAR6306WH6327XTSA1 application, or BAR6306WH6327XTSA1 equivalent, key selection criteria include RF isolation at 1.8 GHz, low-series-inductance SOT-323 package performance, DC bias current handling up to 100 mA, and thermal resistance of 180 K/W under automotive-grade derating.

Technical Context

This PIN diode functions as a voltage-controlled RF switch in series topology, where forward bias reduces series impedance (rf ≤ 1.2 Ω) and reverse bias maximizes shunt isolation (ISO ≥ 12.3 dB at 1.8 GHz). Its I-region width of 4.5 µm enables fast carrier lifetime (τ_rr = 75 ns) and stable capacitance below 0.3 pF across 0–35 V reverse bias.

The device uses a common-anode dual-diode configuration in SOT-323 package, supporting bidirectional RF path control with matched AC characteristics. Thermal design requires junction-to-solder-point resistance (R_thJS) ≤ 180 K/W and maximum junction temperature of 150 °C under continuous 100 mA forward current.

Key Specifications

Pinout & Package

SOT-323 package (3-pin, common-anode configuration), leadless, RoHS-compliant, footprint compatible with JEDEC MO-203AA standard. Dimensions: 2.1 mm × 1.25 mm × 0.95 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with SMV1232-079LF and BAP64-03W, BAR6306WH6327XTSA1 delivers optimal balance of automotive qualification, 1.2 Ω r_f, and 0.3 pF C_T-making it preferred for AEC-Q101–mandated 1.8 GHz LTE switching where loss and reliability are co-constrained.

Availability

BAR6306WH6327XTSA1 is available at Aetrix Electronics and suitable for automotive telematics, 5G sub-6 GHz infrastructure, and Wi-Fi 6E band-switching applications requiring stable component supply and full traceability.

Supply support for BAR6306WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to IATF 16949.

This part belongs to the BAR63 family of high-frequency PIN diodes designed specifically for automotive-qualified RF switching in cellular, GNSS, and short-range wireless front-ends.

FAQ

What is the maximum RF frequency supported by BAR6306WH6327XTSA1?

The device is characterized up to 3 GHz with verified performance: isolation ≥10 dB at 2.45 GHz and insertion loss ≤0.15 dB at 1.8 GHz. Its 0.3 pF capacitance and 1.4 nH series inductance yield self-resonance beyond 3.5 GHz, confirming functional use through 3 GHz per datasheet Figure 8.

Does BAR6306WH6327XTSA1 require external bias circuitry?

Yes - it operates as a current-controlled RF switch requiring DC forward bias (≤100 mA) for low-r_f conduction and reverse bias (≤50 V) for high-ISO blocking. No integrated bias network is present; external series resistor and decoupling capacitor are mandatory per application note AN2011-07.

How does the common-anode configuration affect PCB layout?

The SOT-323 common-anode layout places Pin 1 (anode) adjacent to Pins 2 and 3 (cathodes), requiring symmetric 50 Ω microstrip routing to both cathodes to maintain balanced insertion loss. Ground vias must be placed within 1 mm of each cathode pad to minimize return-path inductance.

Is BAR6306WH6327XTSA1 suitable for pulsed RF applications?

Yes - its 75 ns carrier lifetime and 100 mA DC rating support pulsed operation up to 10 MHz repetition rate. Pulse-width derating follows Figure 6: at 10 µs pulse width, peak current may reach 1.2 A with 0.01 duty cycle, provided junction temperature remains ≤150 °C.