Infineon Technologies BAR6402ELE6327XTMA1

Overview

BAR6402ELE6327XTMA1 from Infineon is a low-signal-distortion RF PIN diode in TSLP-2-19 package, designed for high-isolation, low-loss RF switching up to 6 GHz. It features 0.14 pF capacitance at 1 GHz/0 V, 2 Ω forward resistance at 10 mA/100 MHz, 1.55 μs carrier lifetime, and supports 150 V reverse voltage - enabling use in cellular front-end antenna switches and LTE/Wi-Fi 5/6 RF attenuators.

For engineers reviewing the BAR6402ELE6327XTMA1 datasheet, BAR6402ELE6327XTMA1 pinout, BAR6402ELE6327XTMA1 application, or BAR6402ELE6327XTMA1 equivalent, key selection criteria include RF insertion loss vs. frequency, reverse isolation at 0–10 V bias, forward resistance stability across 1–10 mA drive, and thermal derating above 85 °C ambient.

Technical Context

This PIN diode operates as a voltage-controlled RF resistor: forward bias reduces series resistance (RF) for low-loss signal path conduction, while reverse bias maximizes junction capacitance control and parallel resistance (RP > 3.7 kΩ at 1 GHz) for high isolation. Its 50 μm I-region width and 1.55 μs τ_rr enable optimized trade-off between switching speed and harmonic distortion.

Designed for DC–6 GHz operation, it delivers <0.2 dB insertion loss at 10 mA/2.5 GHz and >13.6 dB isolation at 2.5 GHz/0 V, with capacitance varying from 0.13 pF (1.8–5.5 GHz, 0 V) to 0.53 pF (1 MHz, 0 V), supporting broadband matching in SMT-based RF front-ends.

Key Specifications

Pinout & Package

TSLP-2-19 package: 1.0 mm × 0.6 mm × 0.31 mm, leadless, 0402 footprint, RoHS/halogen-free. Single-anode/cathode configuration with top-side marking "OE".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with SMP1320-079LF and BAP64-03W, BAR6402ELE6327XTMA1 delivers superior high-frequency isolation (>20 dB at 1 GHz) and lower distortion (1.55 μs τ_rr) in space-constrained 0402 designs - making it optimal for 5G FR1 and Wi-Fi 6E front-ends where layout density and linearity are critical.

Availability

BAR6402ELE6327XTMA1 is available at Aetrix Electronics and suitable for cellular front-end modules, Wi-Fi 6E access points, and 5G small cell base stations requiring stable component supply, consistent RF performance across temperature, and JEDEC-qualified industrial reliability.

Supply support for BAR6402ELE6327XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability industrial and communications components.

The BAR64 family targets RF infrastructure and mobile device front-ends, emphasizing low distortion, high isolation, and compact packaging for next-generation wireless transceivers operating through 6 GHz.

FAQ

What is the maximum recommended forward current for continuous operation?

The absolute maximum forward current is 100 mA per datasheet Table 2, but for reliable long-term operation at TA = 85 °C, Infineon specifies 50 mA as the practical limit to maintain junction temperature ≤135 °C. Derating to 30 mA is advised for designs operating near 125 °C ambient or requiring >10-year field life.

Does BAR6402ELE6327XTMA1 require external DC blocking capacitors in RF paths?

No external DC blocking capacitor is needed when used in series-switch configuration with proper bias tee design, because its 0.14 pF capacitance at 0 V is sufficiently low to avoid RF shorting. However, in shunt-switch configurations, a series capacitor ≥100 pF is required to isolate DC bias from the RF path while preserving impedance match.

How does carrier lifetime affect intermodulation performance in multi-carrier LTE systems?

A 1.55 μs τ_rr minimizes minority carrier storage effects that cause gain compression and third-order intermodulation (IMD3) in wideband signals. At 20 MHz LTE CA with 2×20 MHz carriers, this lifetime keeps IMD3 below −105 dBc, preventing adjacent channel interference in base station receivers.

Can BAR6402ELE6327XTMA1 be used in 5G mmWave (24–39 GHz) applications?

No - its specified performance ends at 6 GHz (per product description and AC parameter tables). Above 6 GHz, parasitic inductance (0.4 nH) and package resonance degrade isolation and insertion loss beyond usable thresholds. For mmWave, Infineon's BAP70-03 or comparable GaAs PIN diodes with sub-0.1 nH L_s are required.