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Infineon Technologies BAR6402LRHE6327XTSA1
- Part No.:
- BAR6402LRHE6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SOD-882
- Datasheet:
-
BAR6402LRHE6327XTSA1.pdf
- Description:
- RF DIODE PIN 150V 250MW TSLP-2
- Quantity:
- Payment:
- Shipping:
Inventory:6,305
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Product details
Overview
BAR6402LRHE6327XTSA1 from Infineon Technologies is a silicon PIN diode optimized for high-voltage RF switching and attenuator applications in 0.9–5.6 GHz systems. It delivers 0.17 pF capacitance at 0 V reverse bias (1–1.8 GHz), 2.1 Ω forward resistance at 10 mA, and 150 V reverse voltage rating, enabling low-distortion signal routing in cellular front-end modules.
For engineers reviewing the BAR6402LRHE6327XTSA1 datasheet, BAR6402LRHE6327XTSA1 pinout, BAR6402LRHE6327XTSA1 application, or BAR6402LRHE6327XTSA1 equivalent, key selection criteria include RF insertion loss (0.16 dB @ 1.8 GHz, 10 mA), isolation (17 dB @ 1.8 GHz), thermal resistance (≤60 K/W), and series configuration suitability for 50 Ω RF paths.
Technical Context
This PIN diode operates as a voltage-controlled RF resistor: reverse bias minimizes capacitance for high isolation, while forward bias reduces series resistance for low insertion loss. Its 50 µm I-region width and 1550 ns charge carrier lifetime support stable RF performance across 1 MHz–6 GHz.
The device is configured in a single, leadless series topology within the TSLP-2-7 package, with two terminals directly forming part of the RF signal path-no internal cathode/anode parallel or common configurations. Thermal design must account for junction-to-soldering-point resistance ≤60 K/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 150 V - supports high-voltage RF switch biasing without breakdown in cellular base station or automotive radar front ends |
| Capacitance (CT) | 0.17 pF @ 0 V, 1–1.8 GHz - enables >20 dB isolation above 1 GHz with minimal parasitic loading on 50 Ω traces |
| Forward Resistance (rf) | 2.1 Ω @ 10 mA, 100 MHz - ensures sub-0.2 dB insertion loss in series-switched RF paths at typical control currents |
| Insertion Loss (IL) | 0.16 dB @ 1.8 GHz, 10 mA - confirms minimal signal attenuation in LTE/5G band 1/3/7/40 front-end switches |
| Isolation (ISO) | 17 dB @ 1.8 GHz, 0 V - provides sufficient off-state blocking for duplexers and antenna tuning circuits |
| Thermal Resistance (RthJS) | ≤60 K/W - allows sustained 100 mA forward current operation up to 135 °C soldering point temperature |
Pinout & Package
BAR6402LRHE6327XTSA1 is housed in the TSLP-2-7 surface-mount package: ultra-compact (1.1 × 0.7 × 0.37 mm), leadless, and optimized for RF layout with minimal pad inductance. The device has two terminals in series configuration-no internal connection to substrate or shield.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | RF input / forward bias entry | Primary terminal for DC bias injection and RF signal entry in series-switch topology |
| Cathode | RF output / return path | Completes RF signal path; requires controlled-impedance trace routing to maintain 50 Ω match |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.17 pF at 0 V, 1–1.8 GHz - preserves wideband impedance match in multi-band antenna tuners |
| Low distortion | IP3 > +40 dBm @ 900/1800 MHz - maintains signal integrity in high-linearity LTE uplink paths |
| High-voltage capability | 150 V VR rating - enables use in high-power RF switch drivers without external protection |
| Pb-free & AEC-Q101 exempt | RoHS-compliant TSLP-2-7 package - suitable for industrial and consumer RF modules (not automotive qualified) |
Applications
| Cellular Front-End Switch | Wi-Fi 5/6 Antenna Tuning |
|---|---|
Use Scenario: LTE Band 1/3/7/40 transmit/receive switching in smartphone transceiver modules. IC Role / Device Role / Timing Role: Series-connected PIN diode acting as voltage-controlled RF series switch between PA output and antenna port. Use Value: 0.16 dB insertion loss and 17 dB isolation at 1.8 GHz enable efficient power transfer and Tx/Rx isolation without additional filtering. | Use Scenario: Dynamic impedance matching for dual-band 2.4/5 GHz Wi-Fi antennas in thin client devices. IC Role / Device Role / Timing Role: RF resistor element in tunable matching network, adjusted via DC bias to shift resonance. Use Value: 0.17 pF zero-bias capacitance and 2.1 Ω on-resistance allow precise, low-loss reactance tuning across 2.4–5.8 GHz. |
| Automotive Radar Attenuator | ISM Band 2.45 GHz Transceiver |
Use Scenario: Variable RF attenuation in 77 GHz radar receiver AGC paths using cascaded diode stages. IC Role / Device Role / Timing Role: High-voltage (150 V) PIN diode providing programmable loss in shunt-series attenuator topologies. Use Value: 150 V VR rating and ≤60 K/W RthJS support stable biasing and thermal management under pulsed radar conditions. | Use Scenario: Low-distortion RF switching in Bluetooth/Wi-Fi combo modules operating at 2.45 GHz ISM band. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) series switch controlling RF path between transceiver and antenna. Use Value: IP3 > +40 dBm and 0.35 pF max capacitance at 100 MHz ensure minimal intermodulation in coexistence-sensitive IoT radios. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAR6402VH6327XTSA1 | Same die, SOD-323 package; RthJS ≤140 K/W; lower max junction temp (125 °C vs. 150 °C) | Less suited for thermally constrained 100 mA continuous operation; preferred where board space allows larger footprint | Select when SOD-323 assembly infrastructure exists and thermal margin exceeds 20 K |
| MA4P7472F-1072T | 0.25 pF CT @ 0 V, 1 GHz; 3.5 Ω rf @ 10 mA; 100 V VR; SC-79 package | Higher capacitance limits >2 GHz isolation; lower VR restricts high-power switch use | Choose only for cost-sensitive 1–2 GHz applications where 0.25 pF capacitance is acceptable |
Compared with BAR6402VH6327XTSA1 and MA4P7472F-1072T, BAR6402LRHE6327XTSA1 offers the lowest capacitance (0.17 pF) and best thermal resistance (≤60 K/W), making it optimal for compact, high-frequency, high-reliability RF switches where insertion loss and thermal headroom are critical.
Availability
BAR6402LRHE6327XTSA1 is available at Aetrix Electronics and suitable for cellular front-end modules, Wi-Fi antenna tuning networks, automotive radar attenuators, and ISM band transceivers requiring stable component supply and consistent RF performance across production volumes.
Supply support for BAR6402LRHE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-performance discrete RF components.
BAR6402LRHE6327XTSA1 belongs to the BAR64 family of high-voltage PIN diodes engineered specifically for broadband RF switching and attenuator functions in wireless infrastructure and mobile devices.
FAQ
What is the maximum continuous forward current for BAR6402LRHE6327XTSA1?
The absolute maximum forward current is 100 mA at a soldering point temperature ≤135 °C. Derating is required above 25 °C ambient; at 85 °C ambient, maximum continuous IF drops to ~60 mA based on thermal resistance ≤60 K/W and junction limit of 150 °C.
Does BAR6402LRHE6327XTSA1 support DC blocking in RF paths?
No - this is a series-configured PIN diode intended for active RF switching/attenuation, not passive DC blocking. It lacks integrated capacitive coupling and requires external bias tees or DC-blocking capacitors when used in AC-coupled signal paths.
Can BAR6402LRHE6327XTSA1 be used in AEC-Q101 qualified automotive designs?
No - the BAR64-02LRH variant is explicitly marked "not qualified according AEC Q101" in the official datasheet. For automotive-qualified alternatives, consider the BAR64-04W or BAR64-05W variants, which meet AEC-Q101 requirements.
What is the recommended PCB pad layout for optimal RF performance?
Use symmetric, 0.3 mm wide, 0.5 mm long solder pads with 0.5 mm center-to-center spacing and no thermal relief. Ground plane clearance must extend ≥0.2 mm beyond pad edges to minimize parasitic capacitance; keep RF traces short and impedance-controlled at 50 Ω to preserve 0.17 pF capacitance advantage.
BAR6402LRHE6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SOD-882
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 150V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.35pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.35Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-TSLP-2-7
BAR6402LRHE6327XTSA1 FAQ
1.How can I place an order for BAR6402LRHE6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR6402LRHE6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR6402LRHE6327XTSA1 reliable?
The price and inventory of BAR6402LRHE6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6402LRHE6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BAR6402LRHE6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6402LRHE6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR6402LRHE6327XTSA1?
BAR6402LRHE6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR6402LRHE6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR6402LRHE6327XTSA1?
For technical support, including BAR6402LRHE6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6402LRHE6327XTSA1 requirements.
6.How does Aetrix verify that BAR6402LRHE6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BAR6402LRHE6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6402LRHE6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BAR6402LRHE6327XTSA1?
All BAR6402LRHE6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6402LRHE6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR6402LRHE6327XTSA1 part is unused and in its original packaging.
Return procedure for BAR6402LRHE6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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