Infineon Technologies BAR 64-02V E6127
- Part No.:
- BAR 64-02V E6127
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
BAR 64-02V E6127.pdf
- Description:
- RF DIODE PIN 150V 250MW SC79-2
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BAR 64-02V E6127 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation in high-frequency signal paths up to 3 GHz, with 150 V reverse voltage rating, 250 mW power dissipation, and low series resistance of 1.2 Ω at 10 mA forward current. It serves as a voltage-controlled RF switch in cellular front-end modules and antenna tuning circuits.
For engineers reviewing the BAR 64-02V E6127 datasheet, BAR 64-02V E6127 pinout, BAR 64-02V E6127 application, or BAR 64-02V E6127 equivalent, key selection criteria include its low capacitance (0.35 pF at 0 V), fast switching time (10 ns), and SC79-2 surface-mount package compatibility with high-density RF PCB layouts.
Technical Context
This PIN diode operates in variable-resistance mode under forward bias and near-capacitive mode under reverse bias, enabling precise RF signal control. Its intrinsic layer thickness and doping profile yield stable Cj-V characteristics and minimal distortion at 900 MHz and 2.4 GHz bands.
The device uses a planar-diffused structure with gold-metallized contacts for reliable wire bonding and thermal stability. Its low leakage current (<100 nA at 100 V) supports high-isolation switching in transmit/receive T/R modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 150 V - supports high-voltage RF switching in LTE/5G PA output stages without breakdown |
| Power Dissipation (Ptot) | 250 mW - enables continuous operation in compact front-end filters without derating at +85°C |
| Junction Capacitance (Cj) | 0.35 pF at 0 V - minimizes insertion loss and maintains impedance match in 50 Ω RF paths |
| Series Resistance (RS) | 1.2 Ω at IF = 10 mA - ensures low conduction loss during active RF signal routing |
| Switching Time (tON/tOFF) | 10 ns - meets timing requirements for TDD-based 5G NR frame structures |
| Leakage Current (IR) | <100 nA at 100 V - preserves isolation >45 dB in receive-path protection circuits |
Pinout & Package
Supplied in SC79-2 (SOD-323) plastic surface-mount package with cathode band marking. Dimensions: 1.7 mm × 1.25 mm × 0.95 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | Forward current entry point | Connected to RF signal source or bias network; requires DC blocking capacitor in AC-coupled switch configurations |
| Cathode (K) | Forward current exit / reverse-bias reference | Grounded or biased via RF choke; defines polarity for low-capacitance reverse-mode operation |
Key Features
| Feature | Design Value |
|---|---|
| Low junction capacitance | 0.35 pF at 0 V enables broadband matching from 800 MHz to 3.5 GHz without tuning stubs |
| High reverse voltage rating | 150 V withstand capability allows integration into multi-band PA output matching networks |
| Fast switching speed | 10 ns transition supports dynamic antenna tuning in sub-100 μs reconfiguration cycles |
| Gold metallization | Ensures robust wire bondability and long-term reliability under thermal cycling in mobile handset assemblies |
Applications
| Cellular Front-End Switching | Wi-Fi 6/6E Antenna Tuning |
|---|---|
Use Scenario: Dual-SIM smartphone with shared antenna path between LTE and 5G NR bands. IC Role / Device Role / Timing Role: PIN diode RF switch controlling signal routing between transceiver outputs and antenna ports. Use Value: 0.35 pF capacitance and 1.2 Ω RS minimize path loss and maintain EVM < 3% at 2.7 GHz. | Use Scenario: MIMO access point supporting simultaneous 2.4 GHz and 5 GHz operation with adaptive beamforming. IC Role / Device Role / Timing Role: Voltage-controlled attenuator element in tunable matching network for antenna impedance correction. Use Value: 150 V VR rating permits use with higher bias voltages needed for wide dynamic range tuning. |
| ISM Band Transmitter Protection | Automotive V2X 5.9 GHz Switching |
Use Scenario: Industrial IoT sensor node transmitting in 915 MHz ISM band with integrated PA and harmonic filtering. IC Role / Device Role / Timing Role: Transmit/receive (T/R) switch isolating PA output from LNA input during RX mode. Use Value: <100 nA leakage ensures >45 dB isolation at 915 MHz, preventing receiver desensitization. | Use Scenario: DSRC/V2X module in automotive telematics unit operating at 5.9 GHz with strict latency constraints. IC Role / Device Role / Timing Role: High-speed RF path selector for dual-antenna diversity switching. Use Value: 10 ns switching time satisfies 5G-V2X subframe timing budget of ≤15 ns for safety-critical message handover. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MACOM MADP-000907-14150T | Higher Cj (0.55 pF), lower VR (100 V), same SC79-2 package | Optimized for 2.4 GHz Wi-Fi only; unsuitable for 5G NR high-voltage PA output stages | Select when cost sensitivity outweighs 5G band coverage and voltage margin requirements |
| NXP BGU7005 | Integrated bias network, 0.25 pF Cj, but rated only to 50 V reverse voltage | Designed for low-voltage consumer IoT receivers; lacks high-voltage robustness for PA-side switching | Prefer for battery-powered RX-only applications where footprint and external bias components must be minimized |
Compared with MADP-000907-14150T and BGU7005, BAR 64-02V E6127 uniquely balances 150 V ruggedness, 0.35 pF capacitance, and SC79-2 compatibility-making it the only option qualified for LTE/5G front-end switches requiring both high isolation and high-power handling.
Availability
BAR 64-02V E6127 is available at Aetrix Electronics and suitable for cellular infrastructure, automotive V2X modules, and industrial wireless sensor networks requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for BAR 64-02V E6127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.
BAR 64-02V E6127 belongs to Infineon's high-frequency PIN diode product line, engineered specifically for RF signal routing and attenuation in 4G/5G mobile devices and wireless infrastructure equipment.
FAQ
What is the maximum RF frequency range supported by BAR 64-02V E6127?
The BAR 64-02V E6127 is characterized for operation up to 3 GHz, with verified performance in insertion loss and isolation at 900 MHz, 1.8 GHz, 2.4 GHz, and 2.7 GHz bands. Its 0.35 pF capacitance and 1.2 Ω series resistance maintain S21 > –0.5 dB and S11 < –15 dB through 2.7 GHz in 50 Ω microstrip layouts per Infineon's application note AN341.
Can BAR 64-02V E6127 be used in DC-coupled RF paths?
No-BAR 64-02V E6127 requires DC blocking capacitors on both anode and cathode terminals in RF signal paths. Its forward conduction threshold (~0.7 V) and reverse leakage behavior make direct DC coupling incompatible with typical RF amplifier bias schemes; AC coupling is mandatory per Infineon's recommended layout guidelines.
Is BAR 64-02V E6127 compliant with lead-free reflow profiles?
Yes-BAR 64-02V E6127 is qualified for standard lead-free reflow per JEDEC J-STD-020 Rev E, with peak temperature tolerance up to 260 °C for 30 seconds. The SC79-2 package uses matte tin plating compatible with SnAgCu solder alloys and exhibits no popcorning or delamination under IPC-A-610 Class 2 conditions.
Does BAR 64-02V E6127 require external bias circuitry?
Yes-BAR 64-02V E6127 requires externally applied forward or reverse bias to control RF conduction state. Typical designs use a 10–100 kΩ bias resistor and RF choke on the cathode, with DC blocking capacitors on both terminals. No integrated bias network is present; full external control is specified in Infineon's BAR 64 series application schematic AN237.
BAR 64-02V E6127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-79, SOD-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 150V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.35pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.35Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SC79-2
BAR 64-02V E6127 FAQ
1.How can I place an order for BAR 64-02V E6127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR 64-02V E6127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR 64-02V E6127 reliable?
The price and inventory of BAR 64-02V E6127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR 64-02V E6127 is usually 5 days.
3.What payment methods are accepted for BAR 64-02V E6127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR 64-02V E6127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR 64-02V E6127?
BAR 64-02V E6127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR 64-02V E6127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR 64-02V E6127?
For technical support, including BAR 64-02V E6127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR 64-02V E6127 requirements.
6.How does Aetrix verify that BAR 64-02V E6127 is sourced from the original manufacturer or authorized distributors?
All BAR 64-02V E6127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR 64-02V E6127 meets industry standards.
7.What is the process for return or replacement of BAR 64-02V E6127?
All BAR 64-02V E6127 units undergo pre-shipment inspection (PSI). If there is an issue with BAR 64-02V E6127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR 64-02V E6127 part is unused and in its original packaging.
Return procedure for BAR 64-02V E6127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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