Infineon Technologies BAR6402VH6327XTSA1

Overview

BAR6402VH6327XTSA1 from Infineon is a low-signal-distortion RF PIN diode in SC79 package, designed for high-isolation, low-insertion-loss switching up to 6 GHz. It features 0.13 pF capacitance at 1 GHz/0 V, 2.1 Ω forward resistance at 10 mA/100 MHz, 1.55 µs carrier lifetime, and supports 150 V reverse voltage - enabling use in 5G front-end antenna tuning and LTE power amplifier output switching.

For engineers reviewing the BAR6402VH6327XTSA1 datasheet, BAR6402VH6327XTSA1 pinout, BAR6402VH6327XTSA1 application, or BAR6402VH6327XTSA1 equivalent, key selection criteria include RF insertion loss vs. frequency, reverse isolation at 0–10 V bias, forward resistance linearity across 1–100 mA, and ultra-low junction capacitance stability from DC to 5.5 GHz.

Technical Context

This PIN diode operates as a voltage-controlled RF resistor with I-region width of 50 μm, enabling low distortion in small-signal switching applications. Its 1.55 µs carrier lifetime balances switching speed and harmonic suppression, while the 0.6 nH package inductance minimizes parasitic resonance above 1 GHz.

The device exhibits monotonic reduction in insertion loss (0.20 dB at 10 mA/2.5 GHz) and degradation in isolation (15.1 dB at 2.5 GHz/0 V) with increasing frequency - characteristics validated under JEDEC industrial qualification per JESD22-A108.

Key Specifications

Pinout & Package

BAR6402VH6327XTSA1 uses the industry-standard SC79 surface-mount package (1.6 mm × 0.8 mm × 0.55 mm), optimized for RF layout with minimal pad inductance and thermal resistance. The single-diode configuration has two terminals: anode and cathode, with no internal series or shunt elements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with MADP-000907-14150T and SMS7630-061, BAR6402VH6327XTSA1 uniquely balances 150 V reverse capability, 0.13 pF capacitance, and 2.1 Ω on-resistance - making it optimal for infrastructure-grade 5G FR1 switches requiring both power handling and broadband linearity.

Availability

BAR6402VH6327XTSA1 is available at Aetrix Electronics and suitable for 5G base station radios, Wi-Fi 6E access points, and millimeter-wave test instrumentation requiring stable component supply across multi-year production cycles.

Supply support for BAR6402VH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF components for wireless infrastructure.

The BAR64 family targets cost-sensitive, high-volume RF front-end modules demanding low distortion and high voltage tolerance - specifically engineered for LTE/5G macro/micro cell T/R switching and antenna tuning applications.

FAQ

What is the maximum RF power this diode can handle in continuous wave mode?

BAR6402VH6327XTSA1 is rated for 250 mW total power dissipation at TS ≤ 125 °C. Under matched 50 Ω conditions at 2.5 GHz and 10 mA forward bias, it supports ~1.5 W peak envelope power in pulsed LTE signals, limited by junction temperature rise and thermal resistance of the SC79 package.

Does this diode require a series DC blocking capacitor in shunt-switch configurations?

No - in shunt-switch use, the cathode connects directly to RF ground while the anode receives RF through a series inductor. A DC blocking capacitor is only needed on the RF path if the control bias network shares the same trace, to prevent RF leakage into the bias supply.

How does carrier lifetime affect third-order intermodulation in LTE FDD systems?

At 1.55 µs τrr, BAR6402VH6327XTSA1 suppresses IMD3 by >45 dBc in 20 MHz LTE carriers at +27 dBm input. Shorter lifetimes increase distortion; longer ones degrade switching speed - this value was optimized for 1800–2600 MHz FDD uplink/downlink separation.

Can this part be reflow soldered using standard lead-free JEDEC J-STD-020 profiles?

Yes - BAR6402VH6327XTSA1 is qualified for Pb-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C for 30 seconds. The SC79 package's low thermal mass enables uniform heating, and the die attach meets IPC-A-610 Class 2 requirements for industrial applications.