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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAR6403WE6327HTSA1

Name: BAR6403WE6327HTSA1
Brand: Infineon Technologies
SKU: BAR6403WE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAR6403WE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: SC-76, SOD-323

Datasheet:: BAR6403WE6327HTSA1.pdf

Description:: RF DIODE PIN 150V 250MW SOD323-2

Quantity:: RFQ Add To RFQ list

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Inventory:4,301

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Product details

Overview

BAR6403WE6327HTSA1 from Infineon is a low-signal-distortion RF PIN diode optimized for high-isolation, low-insertion-loss switching in 3 GHz wireless front-ends. It features a 50 μm I-region width, 1.55 μs carrier lifetime, 0.2 pF capacitance at 1 GHz/0 V, 2.7 Ω forward resistance at 10 mA/100 MHz, and operates across –55 °C to +125 °C industrial temperature range.

For engineers reviewing the BAR6403WE6327HTSA1 datasheet, BAR6403WE6327HTSA1 pinout, BAR6403WE6327HTSA1 application, or BAR6403WE6327HTSA1 equivalent, key selection criteria include reverse voltage hold-off (150 V), RF distortion performance at high bias currents, SOD323 package thermal limits, and isolation vs. frequency trade-offs in switch/attenuator topologies.

Technical Context

This PIN diode uses a planar silicon structure with precisely controlled intrinsic region width to balance low RF series resistance and high reverse breakdown. Its 1.55 μs carrier lifetime enables stable charge control under pulsed RF bias, minimizing harmonic generation in transmit/receive path switching.

Designed for single-pole single-throw (SPST) and SPDT configurations, it delivers 20.4 dB isolation at 1 GHz and 0.27 dB insertion loss at 10 mA forward current-critical for LTE/WiFi front-end modules where linearity and power handling coexist.

Key Specifications

Parameter	Value and Actual Design Meaning
Reverse Voltage (V_R)	150 V max - supports high-power RF switch hold-off without avalanche conduction
Capacitance (C)	0.2 pF at 1 GHz / 0 V - enables minimal signal coupling in broadband 50 Ω paths
Forward Resistance (R_F)	2.7 Ω at 10 mA / 100 MHz - ensures low insertion loss in active RF paths
Carrier Lifetime (τ_rr)	1550 ns typical - provides stable charge storage for low-distortion RF modulation
Isolation (ISO)	20.4 dB at 1 GHz / 0 V reverse bias - achieves high off-state rejection in antenna switching
Insertion Loss (IL)	0.27 dB at 10 mA / 1 GHz - maintains signal integrity in high-frequency data links
Package	SOD323 (2.5 × 1.25 × 0.9 mm) - surface-mount compatible with automated RF assembly

Pinout & Package

BAR6403WE6327HTSA1 is housed in an industry-standard SOD323 plastic package with two external terminals: anode and cathode. The compact 2.5 mm × 1.25 mm footprint supports high-density RF board layouts while maintaining thermal dissipation up to 250 mW.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point	Connected to RF source or antenna port in series-switch configuration; requires DC blocking if biased externally
Cathode	Forward current exit / reverse voltage terminal	Grounded or pulled to negative bias in shunt-switch topology; defines RF return path and isolation reference

Key Features

Feature	Design Value
Low signal distortion	1.55 μs carrier lifetime minimizes intermodulation in multi-carrier LTE/WiFi signals
Ultra-low capacitance	0.2 pF at 1 GHz enables >3 GHz operation with <0.5 dB impedance mismatch
High reverse voltage rating	150 V breakdown supports 26 dBm PAPR handling in cellular PA output stages
Industrial temperature range	–55 °C to +125 °C operation validated per JEDEC22-A104 - suitable for outdoor base stations
Pb-free & RoHS compliant	Halogen-free SOD323 package meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1)

Applications

Cellular Front-End Switching

Wi-Fi 5/6 Antenna Diversity

Use Scenario: Transmit/receive path selection in 4G/5G handset power amplifiers and antenna tuners.

IC Role / Device Role / Timing Role: RF series switch controlling signal flow between PA output and antenna port.

Use Value: 20.4 dB isolation at 1 GHz prevents TX leakage into RX chain; 0.27 dB IL preserves EVM under 20 MHz LTE bandwidth.

Use Scenario: Dynamic antenna selection in dual-band 2.4/5 GHz Wi-Fi routers and access points.

IC Role / Device Role / Timing Role: High-speed shunt switch enabling sub-μs antenna reconfiguration during MIMO channel probing.

Use Value: 15.7 dB isolation at 1.8 GHz ensures spatial multiplexing fidelity; SOD323 footprint allows dense PCB layout.

RF Attenuator Core

High-Speed Data Interface Protection

Use Scenario: Voltage-controlled variable attenuator in test equipment and satellite modem IF stages.

IC Role / Device Role / Timing Role: Bias-tunable resistive element defining attenuation slope via forward current adjustment.

Use Value: Linear R_F vs. I_F response (2.7–11.1 Ω over 10–1 mA) enables precise 10–30 dB attenuation control.

Use Scenario: ESD-hardened RF protection in USB 3.1/PCIe Gen4 high-speed serial interfaces.

IC Role / Device Role / Timing Role: Low-capacitance shunt clamp diverting transient energy before signal integrity degradation.

Use Value: 0.2 pF capacitance avoids signal edge rounding above 5 Gbps; 150 V VR withstands ±8 kV HBM ESD events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MACOM MADP-000907-14150T	Higher C = 0.35 pF at 1 GHz, lower R_F = 1.8 Ω at 10 mA, SOT-23 package	Better IL at 2.5 GHz but reduced isolation (14.2 dB) and smaller 100 V V_R	Select when lowest possible insertion loss dominates over high-voltage hold-off
NXP BGU7005	Integrated bias network, 0.22 pF C, 3.5 Ω R_F, SOT-323 package, 100 V V_R	Reduces external bias components but lacks 150 V capability for PA output stage use	Select for simplified layout in low-voltage receiver front-ends only

Compared with BAR6403WE6327HTSA1, MADP-000907-14150T offers superior high-frequency IL but sacrifices isolation and voltage margin, while BGU7005 trades integration for reduced robustness-making the Infineon device optimal for high-reliability, high-voltage RF switching where distortion and thermal stability are critical.

Availability

BAR6403WE6327HTSA1 is available at Aetrix Electronics and suitable for cellular infrastructure, Wi-Fi 6E access points, and satellite communication transceivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAR6403WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF solutions for wireless infrastructure.

The BAR64-03W belongs to Infineon's RF PIN diode product line, engineered specifically for low-distortion, high-isolation switching in 3G/4G/5G and Wi-Fi front-end modules where linearity and voltage robustness are non-negotiable.

FAQ

What is the maximum continuous forward current rating for BAR6403WE6327HTSA1?

The absolute maximum forward current is 100 mA at T_A = 25 °C. Derating is required above 25 °C ambient; at 85 °C, the safe operating limit drops to approximately 65 mA based on thermal resistance and 250 mW total power dissipation limit. Exceeding this risks irreversible junction damage due to localized heating in the I-region.

Can BAR6403WE6327HTSA1 be used in DC-coupled RF switch designs?

No-BAR6403WE6327HTSA1 must be used with AC coupling or DC blocking capacitors. Its 0.82 V forward voltage and 20 nA reverse leakage at 20 V indicate no DC path tolerance; direct DC bias would cause uncontrolled conduction, thermal runaway, or accelerated degradation of the 50 μm I-region.

How does the 1.55 μs carrier lifetime affect RF distortion performance?

The 1550 ns carrier lifetime ensures sufficient minority carrier storage to maintain linear conductance under RF modulation envelopes up to 20 MHz bandwidth. Shorter lifetimes increase harmonic distortion; longer lifetimes degrade switching speed. This value is optimized for LTE ACLR compliance and Wi-Fi OFDM EVM targets below –35 dB.

Is BAR6403WE6327HTSA1 qualified for automotive applications?

No-it is qualified only for industrial applications per JEDEC22-A104, A108, and A110 standards. It lacks AEC-Q200 stress testing, high-temperature storage validation beyond +125 °C, and zero-defect screening required for automotive use. For automotive RF switches, Infineon's BATxx series is recommended instead.

BAR6403WE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-76, SOD-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Diode Type:: PIN - Single

Voltage - Peak Reverse (Max):: 150V

Current - Max:: 100 mA

Capacitance @ Vr, F:: 0.35pF @ 20V, 1MHz

Resistance @ If, F:: 1.35Ohm @ 100mA, 100MHz

Power Dissipation (Max):: 250 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOD323-3D

BAR6403WE6327HTSA1 FAQ

1.How can I place an order for BAR6403WE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6403WE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6403WE6327HTSA1 reliable?

The price and inventory of BAR6403WE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6403WE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BAR6403WE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6403WE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR6403WE6327HTSA1?

BAR6403WE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6403WE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6403WE6327HTSA1?

For technical support, including BAR6403WE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6403WE6327HTSA1 requirements.

6.How does Aetrix verify that BAR6403WE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAR6403WE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6403WE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAR6403WE6327HTSA1?

All BAR6403WE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6403WE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6403WE6327HTSA1 part is unused and in its original packaging.

Return procedure for BAR6403WE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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