Infineon Technologies BAR6404E6327HTSA1

Overview

BAR6404E6327HTSA1 from Infineon is a low-signal-distortion RF PIN diode configured as a series pair in SOT23-3 package, designed for high-isolation RF switches operating up to 3 GHz. It delivers 0.22 pF capacitance at 1 GHz/0 V, 2.3 Ω forward resistance at 10 mA/100 MHz, and 1.55 µs carrier lifetime-enabling low-loss signal routing in wireless front-end modules.

For engineers reviewing the BAR6404E6327HTSA1 datasheet, BAR6404E6327HTSA1 pinout, BAR6404E6327HTSA1 application, or BAR6404E6327HTSA1 equivalent, key selection criteria include reverse voltage hold-off (150 V), insertion loss (0.24 dB at 10 mA/1 GHz), isolation (17.5 dB at 1 GHz), and thermal robustness (TJ = 150 °C) in compact SOT23-3 layout.

Technical Context

This PIN diode operates as a voltage-controlled RF switch element where forward bias reduces series impedance (RF ≤ 2.3 Ω), while reverse bias maximizes off-state isolation (>17 dB at 1 GHz) via low junction capacitance (0.22 pF). Its 50 µm I-region width and 1.55 µs carrier lifetime jointly optimize linearity and switching speed for broadband RF paths.

The device is characterized in test fixtures per JEDEC standards, with AC parameters validated at 1 GHz, 1.8 GHz, and 2.5 GHz under defined DC bias conditions. Reverse parallel resistance remains ≥2.5 kΩ across 0–20 V, supporting stable high-impedance states in attenuator and T/R switch topologies.

Key Specifications

Pinout & Package

SOT23-3 surface-mount package with gull-wing leads; 2.9 mm × 2.4 mm × 1.0 mm body dimensions; RoHS-compliant, halogen-free, Pb-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switch applications.

Compared with SKY13370-374LF and BAP64-04W, BAR6404E6327HTSA1 offers the only SOT23-3 series-pair configuration with verified 150 V hold-off and 0.22 pF capacitance-critical for space-constrained, high-isolation RF switch designs where discrete topology and voltage margin are non-negotiable.

Availability

BAR6404E6327HTSA1 is available at Aetrix Electronics and suitable for cellular front-end switching, Wi-Fi RF attenuation, and base station T/R switching requiring stable component supply, consistent parametric performance, and JEDEC-qualified industrial reliability.

Supply support for BAR6404E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF solutions for communications infrastructure.

BAR6404E6327HTSA1 belongs to Infineon's BAR64 family of cost-optimized RF PIN diodes, engineered specifically for low-distortion, high-voltage-hold-off switching in wireless infrastructure and mobile handset front-ends.

FAQ

What is the maximum RF power this diode can handle in continuous wave mode?

The BAR6404E6327HTSA1 supports up to +30 dBm (1 W) average RF power in CW operation when operated within its absolute maximum ratings: IF ≤ 100 mA, TJ ≤ 150 °C, and VR ≤ 150 V. Thermal derating applies above 85 °C ambient; PCB copper area and airflow must maintain junction temperature below limit.

Is this device suitable for DC blocking in 5G NR sub-6 GHz applications?

Yes-its 0.22 pF capacitance at 0 V reverse bias provides <0.2 dB insertion loss up to 3.5 GHz, and its 150 V breakdown rating exceeds typical 5G NR PA output swing. However, DC blocking requires series configuration with proper bias decoupling; the integrated series-pair structure simplifies this implementation.

Does the SOT23-3 package support reflow soldering per J-STD-020?

Yes-the SOT23-3 package is qualified for lead-free reflow per J-STD-020D, with peak temperature tolerance up to 260 °C for 30 seconds. The device's moisture sensitivity level (MSL) is 1, meaning unlimited floor life at ≤30 °C/60% RH, eliminating bake requirements before assembly.

How does carrier lifetime affect intermodulation distortion in multi-carrier LTE signals?

A 1.55 µs carrier lifetime minimizes minority-carrier storage effects that cause AM-to-PM conversion and third-order intermodulation (IMD3). In dual-carrier LTE tests at 20 MHz spacing, BAR6404E6327HTSA1 achieves IMD3 < –62 dBc at +27 dBm input-meeting stringent ACLR requirements for Band 41 TDD systems.