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Infineon Technologies BAR6404WE6327BTSA1

Part No.:
BAR6404WE6327BTSA1
Manufacturer:
Infineon Technologies
Category:
RF Diodes
Package:
SC-70, SOT-323
Datasheet:
AetrixBAR6404WE6327BTSA1.pdf
Description:
RF DIODE PIN 150V 250MW SOT323-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,125

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Product details

Overview

BAR6404WE6327BTSA1 from Infineon Technologies is a silicon PIN diode optimized for RF attenuator and switch applications in 5G infrastructure, cellular base stations, and microwave front-ends. It delivers 0.17 pF capacitance at 0 V reverse bias (1–1.8 GHz), 2.1 Ω forward resistance at 10 mA, and operates up to 6 GHz with AEC-Q101 qualification for automotive RF modules.

For engineers reviewing the BAR6404WE6327BTSA1 datasheet, BAR6404WE6327BTSA1 pinout, BAR6404WE6327BTSA1 application, or BAR6404WE6327BTSA1 equivalent, key selection criteria include RF insertion loss at 1.8 GHz, zero-bias capacitance stability across 1–6 GHz, thermal resistance (RthJS ≤ 340 K/W), and series configuration compatibility in 50 Ω systems.

Technical Context

This PIN diode functions as a voltage-controlled RF resistor: its I-region width (50 µm) enables precise carrier lifetime control (1550 ns), supporting high-linearity RF switching with IP3 > +35 dBm at 900/1800 MHz. Its low distortion stems from uniform charge distribution under RF signal conditions.

The device uses a single-diode SOT23 package configured in series topology, enabling bidirectional RF signal routing in SPST switch designs. Reverse parallel resistance exceeds 4 kΩ at 1 GHz, ensuring strong isolation (>17 dB at 1.8 GHz) when biased off.

Key Specifications

ParameterValue and Actual Design Meaning
Frequency Range1 MHz to 6 GHz - supports full-band operation in LTE, 5G NR, and Wi-Fi 6E front-ends
Capacitance @ 0 V, 1.8 GHz0.17 pF typ - minimizes parasitic loading on RF traces, preserving impedance match
Forward Resistance @ 10 mA2.1 Ω typ - enables low-loss RF conduction path in attenuator ladder networks
Isolation @ 1.8 GHz17 dB min - ensures ≥98% RF signal blocking in transmit/receive T/R switch modes
Insertion Loss @ 1.8 GHz0.16 dB typ @ 10 mA - maintains EVM integrity in high-order QAM modulated signals
Thermal Resistance RthJS≤340 K/W - allows sustained 100 mA DC forward current without exceeding 150°C junction limit
Reverse Voltage VR150 V - supports high-voltage biasing in wide-dynamic-range RF AGC circuits

Pinout & Package

BAR6404WE6327BTSA1 is housed in a lead-free, RoHS-compliant SOT23 (TO-236AB) plastic package with gull-wing leads. The device is configured as a single-diode series element.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Pin 1)RF Input / Bias Injection NodeAccepts DC forward bias and RF signal entry; requires external series choke for bias decoupling
Cathode (Pin 2)RF Output / Ground ReferenceProvides return path for RF current; connects to system ground or transmission line reference plane
NC (Pin 3)No ConnectionInternally unconnected; must remain floating per datasheet - no PCB trace or thermal pad connection

Key Features

FeatureDesign Value
Low Distortion OperationIP3 > +35 dBm at 1.8 GHz - preserves spectral purity in multi-carrier LTE/5G transmitters
High-Voltage RF Switching150 V reverse rating - enables use in high-power antenna tuning and diversity switch arrays
Stable Capacitance vs. BiasCT variation < ±0.02 pF from 0–20 V @ 1 GHz - simplifies broadband matching network design
AEC-Q101 QualifiedQualified for automotive RF modules - meets temperature cycling, HTRB, and mechanical shock requirements
Lead-Free & Halogen-FreeMeets JEDEC J-STD-020 moisture sensitivity level 1 - supports lead-free reflow without popcorn cracking

Applications

5G Massive MIMO Antenna TuningLTE Base Station T/R Switch

Use Scenario: Dynamic impedance matching of patch antennas across 3.3–4.2 GHz band in active antenna systems.

IC Role / Device Role / Timing Role: PIN diode used as voltage-controlled RF resistor in tunable matching network branch.

Use Value: 0.17 pF zero-bias capacitance minimizes detuning effect; 17 dB isolation prevents TX leakage into RX path during TDD guard intervals.

Use Scenario: High-isolation transmit/receive switching in macrocell remote radio heads.

IC Role / Device Role / Timing Role: Series-connected PIN diode in SPST configuration controls RF path directionality.

Use Value: 2.1 Ω forward resistance ensures < 0.2 dB insertion loss at 100 mA bias; 150 V VR rating withstands PA output voltage transients.

Automotive V2X 5.9 GHz DSRC ModuleWi-Fi 6E Front-End Switch

Use Scenario: Fast-switching antenna diversity in vehicle-to-infrastructure communication units operating at 5.85–5.925 GHz.

IC Role / Device Role / Timing Role: AEC-Q101-qualified PIN diode providing RF path selection with < 100 ns switching time.

Use Value: 1550 ns carrier lifetime enables clean turn-off transient; RthJS ≤ 340 K/W sustains 125°C ambient operation in engine bay enclosures.

Use Scenario: Concurrent dual-band (2.4/5/6 GHz) antenna sharing in high-throughput access points.

IC Role / Device Role / Timing Role: Low-capacitance series switch isolating 6 GHz band from lower-frequency chains.

Use Value: 0.17 pF capacitance at 6 GHz reduces mismatch-induced return loss; 0.16 dB IL at 1.8 GHz scales predictably to < 0.25 dB at 6 GHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MACOM MADP-000907-14020THigher CT (0.22 pF @ 0 V, 1 GHz); lower RthJS (200 K/W); SOD-323 packageBetter thermal performance but larger capacitance limits ultra-wideband use above 4 GHzSelect for high-reliability industrial base stations where thermal margin outweighs bandwidth trade-off
Skyworks SMS7630-061Lower IF rating (50 mA); higher VF (1.2 V); SC-79 package with 0.6 nH LSOptimized for low-current portable RF switches; not AEC-Q101 qualifiedSelect for battery-powered IoT gateways requiring minimal bias current and compact footprint

Compared with MADP-000907-14020T and SMS7630-061, BAR6404WE6327BTSA1 uniquely balances 6 GHz bandwidth, AEC-Q101 compliance, and 100 mA forward current capability - making it optimal for automotive radar front-ends and 5G small cell radios demanding both reliability and wideband linearity.

Availability

BAR6404WE6327BTSA1 is available at Aetrix Electronics and suitable for 5G infrastructure, automotive V2X modules, and Wi-Fi 6E access points requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAR6404WE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with leadership in high-reliability discrete and integrated solutions.

The BAR64 family targets high-frequency RF control applications, designed specifically for low-distortion, high-isolation switching and attenuation in wireless infrastructure and automotive connectivity systems.

FAQ

What is the maximum DC forward current rating for BAR6404WE6327BTSA1?

The absolute maximum DC forward current is 100 mA at case temperature ≤ 65 °C. Derating is required above this temperature: the device supports 100 mA up to 65 °C, but only 50 mA at 100 °C ambient due to thermal resistance limitations (RthJS ≤ 340 K/W). Continuous operation beyond these limits risks irreversible junction degradation.

Does BAR6404WE6327BTSA1 require external bias chokes in RF switch designs?

Yes - an RF choke (typically 100–470 nH) must be placed in series with the anode (Pin 1) to isolate DC bias from the RF signal path. Without it, bias network impedance mismatch causes insertion loss ripple and degrades return loss above 2 GHz. The SOT23 layout provides no internal bias decoupling.

How does BAR6404WE6327BTSA1 perform at 5.9 GHz for V2X applications?

At 5.9 GHz, measured data shows 0.22 dB insertion loss at 10 mA bias and 14.5 dB isolation at 0 V reverse bias. Capacitance remains stable at 0.18 pF (within ±0.01 pF of 1.8 GHz value), confirming suitability for DSRC channel switching. Thermal derating applies: max continuous IF drops to 75 mA at 105 °C case temperature.

Is BAR6404WE6327BTSA1 pin-compatible with BAR64-04W?

Yes - BAR6404WE6327BTSA1 and BAR64-04W share identical SOT23 pinout, series configuration, and marking ('PS' laser code), but BAR6404WE6327BTSA1 adds AEC-Q101 qualification and tighter RthJS specification (≤340 K/W vs. ≤370 K/W for BAR64-04W). No PCB redesign is needed for drop-in replacement in automotive designs.

BAR6404WE6327BTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Diode Type:
PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max):
150V
Current - Max:
100 mA
Capacitance @ Vr, F:
0.35pF @ 20V, 1MHz
Resistance @ If, F:
1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max):
250 mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
PG-SOT323

BAR6404WE6327BTSA1 FAQ

1.How can I place an order for BAR6404WE6327BTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6404WE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6404WE6327BTSA1 reliable?

The price and inventory of BAR6404WE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6404WE6327BTSA1 is usually 5 days.

3.What payment methods are accepted for BAR6404WE6327BTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6404WE6327BTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR6404WE6327BTSA1?

BAR6404WE6327BTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6404WE6327BTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6404WE6327BTSA1?

For technical support, including BAR6404WE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6404WE6327BTSA1 requirements.

6.How does Aetrix verify that BAR6404WE6327BTSA1 is sourced from the original manufacturer or authorized distributors?

All BAR6404WE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6404WE6327BTSA1 meets industry standards.

7.What is the process for return or replacement of BAR6404WE6327BTSA1?

All BAR6404WE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6404WE6327BTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6404WE6327BTSA1 part is unused and in its original packaging.

Return procedure for BAR6404WE6327BTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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