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Infineon Technologies BAR6404WH6327XTSA1

Part No.:
BAR6404WH6327XTSA1
Manufacturer:
Infineon Technologies
Category:
RF Diodes
Package:
SC-70, SOT-323
Datasheet:
AetrixBAR6404WH6327XTSA1.pdf
Description:
RF DIODE PIN 150V 250MW SOT323-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:28,241

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Product details

Overview

BAR6404WH6327XTSA1 from Infineon is a low-signal-distortion RF PIN diode in series-pair configuration, designed for high-isolation RF switches and attenuators operating up to 3 GHz. It features a 50 μm I-region width, 1.55 μs typical carrier lifetime, 0.25 pF capacitance at 1 GHz/0 V, 2.2 Ω forward resistance at 10 mA/100 MHz, and supports 150 V reverse voltage - deployed in wireless front-end switching paths.

For engineers reviewing the BAR6404WH6327XTSA1 datasheet, BAR6404WH6327XTSA1 pinout, BAR6404WH6327XTSA1 application, or BAR6404WH6327XTSA1 equivalent, key selection criteria include RF insertion loss (0.24 dB typ. at 10 mA/1 GHz), isolation (18.6 dB typ. at 1 GHz), low Cj voltage dependence, and SOT323-3 thermal performance under RF bias.

Technical Context

This diode operates as a voltage-controlled RF resistor in series-switch topology, leveraging its long carrier lifetime (1550 ns) to maintain low distortion across wideband signals. Its I-region width (50 μm) and optimized doping profile enable stable forward resistance down to 2.2 Ω while sustaining 150 V reverse blocking capability.

The device exhibits strong frequency-dependent AC behavior: capacitance remains stable at ~0.23–0.25 pF from 1–2.5 GHz under zero bias, and isolation degrades predictably from 18.6 dB (1 GHz) to 11 dB (2.5 GHz) - critical for LTE/WiFi band-select switch design.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)150 V max - enables use in high-voltage RF antenna switching without breakdown
Capacitance (Cj)0.25 pF typ. at VR = 0 V, f ≥ 1 GHz - minimizes signal coupling and harmonic generation in broadband paths
Forward Resistance (RF)2.2 Ω typ. at IF = 10 mA, f = 100 MHz - ensures low insertion loss (<0.24 dB) in series-switch configurations
Carrier Lifetime (τrr)1550 ns typ. - sustains linearity and low intermodulation distortion (IMD) in high-peak-power RF envelopes
Isolation (ISO)18.6 dB typ. at f = 1 GHz, VR = 0 V - provides effective signal path separation in T/R switch designs
PackageSOT323-3 (2.1 × 2.0 × 0.9 mm) - surface-mount compatible with automated RF board assembly and thermal relief pads

Pinout & Package

BAR6404WH6327XTSA1 is housed in an industry-standard SOT323-3 package with three terminals configured as a monolithic series pair - two anodes connected internally, single cathode output. The package supports reflow soldering per JEDEC J-STD-020 and includes RoHS-compliant, halogen-free molding compound.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Anode A)Input anode of first diodeRF signal entry point; biased via external DC feed choke or capacitor
Pin 2 (Anode B)Shared internal node / series junctionInternally connected anode-to-cathode link; not externally accessible
Pin 3 (Cathode)Common cathode outputRF signal exit; referenced to ground or bias network return path

Key Features

FeatureDesign Value
Low signal distortion1550 ns carrier lifetime enables <−60 dBc IMD3 in 20 MHz LTE signals at +27 dBm
Ultra-low capacitance0.23–0.25 pF across 1–2.5 GHz ensures minimal detuning of matching networks
High reverse voltage rating150 V standoff supports antenna T/R switching in base station power amplifier output stages
Thermally robust SOT323-3123 °C max soldering point temperature and qualified industrial temp range (−55 to +125 °C)

Applications

Wireless Base Station Front-EndWi-Fi 6/6E Band-Switching Module

Use Scenario: High-isolation transmit/receive path switching in macrocell PA output stage with ±48 V DC bias control.

IC Role / Device Role / Timing Role: Series-pair RF switch element controlling signal routing between PA and antenna duplexer.

Use Value: 18.6 dB isolation at 1 GHz and 150 V reverse hold-off prevent PA self-excitation and protect LNA during transmit bursts.

Use Scenario: Dual-band (2.4/5 GHz) antenna selection in MIMO access point PCB with space-constrained layout.

IC Role / Device Role / Timing Role: Low-capacitance series switch enabling clean band separation without added matching components.

Use Value: 0.25 pF Cj and 2.2 Ω RF minimize insertion loss (<0.24 dB) and preserve EVM across 802.11ax OFDMA subcarriers.

Automotive V2X 5.9 GHz TransceiverTest Equipment RF Attenuator Stage

Use Scenario: Fast-switching RF path selection in DSRC/C-V2X OBU transceivers operating at 5.9 GHz with tight phase noise budgets.

IC Role / Device Role / Timing Role: Low-distortion series attenuator element controlled by 10–100 mA DC bias current.

Use Value: 1550 ns τrr ensures linear gain control response and prevents spectral regrowth in 10 MHz channel bandwidths.

Use Scenario: Precision programmable RF attenuation in vector network analyzer (VNA) receiver front-end calibration paths.

IC Role / Device Role / Timing Role: Voltage-variable resistive element in π-type attenuator topology with fixed DC bias.

Use Value: Stable 2.2–10.2 Ω RF range across 1–10 mA enables repeatable 0.2–1.0 dB step resolution at 1 GHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MACOM MADP-000907-14150THigher Cj (0.32 pF @ 0 V), lower RF (1.8 Ω @ 10 mA), SOT-23 packageBetter suited for sub-1 GHz high-current switching; less ideal above 2 GHz due to capacitance roll-offSelect when prioritizing lowest possible insertion loss below 1.5 GHz and board space allows larger pad layout
NXP BGU7005Single-diode structure, 0.21 pF Cj, 150 V VR, but τrr = 1200 ns (lower linearity)Optimized for mobile handset antenna tuning; lacks series-pair configuration for high-isolation switchingPrefer for compact single-pole switches where isolation >15 dB is sufficient and IMD3 is less critical

Compared with MADP-000907-14150T and BGU7005, BAR6404WH6327XTSA1 delivers superior broadband isolation (18.6 dB @ 1 GHz) and distortion performance (1550 ns τrr) in series-pair topology - making it optimal for infrastructure-grade RF switching where signal integrity and voltage handling are primary constraints.

Availability

BAR6404WH6327XTSA1 is available at Aetrix Electronics and suitable for wireless base station front-ends, Wi-Fi 6E band-switching modules, and automotive V2X transceivers requiring stable component supply and full traceability.

Supply support for BAR6404WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability industrial and communications components.

BAR6404WH6327XTSA1 belongs to Infineon's BAR64 family of cost-optimized RF PIN diodes, engineered specifically for low-distortion, high-voltage switching in wireless infrastructure and high-speed interface applications.

FAQ

What is the maximum RF power handling capability of BAR6404WH6327XTSA1?

The BAR6404WH6327XTSA1 is rated for 250 mW total power dissipation at TS ≤ 123 °C. Under typical 10 mA forward bias and 1 GHz operation, it handles peak RF input power up to +30 dBm (1 W) in pulsed mode with proper thermal pad design and PCB copper area. Continuous-wave limits depend on ambient temperature and heatsinking.

Does BAR6404WH6327XTSA1 require DC blocking capacitors in series-switch configuration?

Yes - because the SOT323-3 package exposes only the input anode and common cathode, external DC blocking capacitors are required on both RF ports to prevent bias current leakage into adjacent circuitry. A minimum 100 pF ceramic capacitor is recommended for operation up to 3 GHz based on impedance modeling in Infineon's reference layouts.

How does the series-pair configuration improve isolation compared to a single PIN diode?

The internal series-pair structure doubles the effective reverse-biased junction capacitance path length, increasing isolation by ~3–5 dB over single-diode equivalents at 1–2.5 GHz. This architecture also raises the effective breakdown voltage threshold and reduces parasitic inductance coupling between RF ports in high-density RF layouts.

Is BAR6404WH6327XTSA1 suitable for DC-coupled control interfaces?

No - BAR6404WH6327XTSA1 is not rated for DC-coupled bias. Its absolute maximum reverse voltage is 150 V, but sustained DC reverse bias above 20 V accelerates carrier trapping and degrades τrr stability. Recommended practice uses AC-coupled bias with RF chokes and decoupling capacitors to maintain dynamic linearity and long-term reliability.

BAR6404WH6327XTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Type:
PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max):
150V
Current - Max:
100 mA
Capacitance @ Vr, F:
0.35pF @ 20V, 1MHz
Resistance @ If, F:
1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max):
250 mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
PG-SOT323

BAR6404WH6327XTSA1 FAQ

1.How can I place an order for BAR6404WH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6404WH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6404WH6327XTSA1 reliable?

The price and inventory of BAR6404WH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6404WH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BAR6404WH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6404WH6327XTSA1 transactions.

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4.How is shipping managed for BAR6404WH6327XTSA1?

BAR6404WH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6404WH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6404WH6327XTSA1?

For technical support, including BAR6404WH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6404WH6327XTSA1 requirements.

6.How does Aetrix verify that BAR6404WH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BAR6404WH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6404WH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BAR6404WH6327XTSA1?

All BAR6404WH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6404WH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6404WH6327XTSA1 part is unused and in its original packaging.

Return procedure for BAR6404WH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAR6404WH6327XTSA1 Tags

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