Infineon Technologies BAR6405E6327HTSA1

Overview

BAR6405E6327HTSA1 from Infineon is a low-signal-distortion RF PIN diode in a common-cathode dual configuration, optimized for high-isolation RF switching up to 3 GHz. It features a 50 μm I-region width, 1.55 μs carrier lifetime, 0.22 pF capacitance at 1 GHz/0 V, 2.3 Ω forward resistance at 10 mA/100 MHz, and 150 V reverse voltage rating-used in cellular front-end switch modules requiring low insertion loss and high linearity.

For engineers reviewing the BAR6405E6327HTSA1 datasheet, BAR6405E6327HTSA1 pinout, BAR6405E6327HTSA1 application, or BAR6405E6327HTSA1 equivalent, key selection criteria include RF distortion performance at high bias voltages, capacitance stability across 1–2.5 GHz, isolation vs. frequency trade-offs, and SOT23-3 thermal derating under pulsed RF conditions.

Technical Context

This dual-common-cathode PIN diode operates as a voltage-controlled RF resistor: forward bias reduces series resistance (RF = 2.3 Ω typ. @ 10 mA), while reverse bias maximizes shunt impedance (RP = 3.3 kΩ typ. @ 1 GHz, 0 V). Its 50 μm intrinsic region enables low distortion by balancing charge carrier lifetime (τrr = 1550 ns) and junction capacitance.

The device supports broadband operation from DC to 3 GHz with measured isolation >17 dB at 1 GHz and >10 dB at 2.5 GHz under 0 V reverse bias. Insertion loss remains ≤0.24 dB at 10 mA forward current across 1–1.8 GHz, confirming suitability for LTE/Wi-Fi front-end T/R switching where harmonic suppression and intermodulation distortion matter.

Key Specifications

Pinout & Package

BAR6405E6327HTSA1 is housed in an SOT23-3 package (2.9 mm × 2.4 mm × 1.0 mm), lead-free and RoHS-compliant. The common-cathode dual-diode configuration uses three terminals: two anodes (A1, A2) and one shared cathode (K).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with SKY13370-374LF and BAP64-05W, BAR6405E6327HTSA1 uniquely delivers dual-anode functionality in SOT23-3 with 150 V rating and verified 17 dB isolation at 1 GHz-making it optimal for compact, high-reliability cellular front-end designs where space and voltage margin are constrained.

Availability

BAR6405E6327HTSA1 is available at Aetrix Electronics and suitable for cellular front-end switching, Wi-Fi diversity antenna routing, and ISM-band transceiver T/R control requiring stable component supply across automotive, industrial, and consumer production programs.

Supply support for BAR6405E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF solutions for wireless infrastructure and mobile devices.

BAR6405E6327HTSA1 belongs to Infineon's BAR64 family of cost-optimized RF PIN diodes, designed specifically for low-distortion, high-isolation switching in compact 3G/4G/5G front-end modules where thermal robustness and voltage margin are critical.

FAQ

What is the maximum continuous forward current for BAR6405E6327HTSA1?

The absolute maximum forward current is 100 mA per diode, but sustained operation above 10 mA requires thermal derating per the SOT23-3 package's 250 mW total power dissipation limit. At 100 mA, junction temperature rises rapidly-designs should use pulsed bias or heatsinking for >50 mA average current.

Can BAR6405E6327HTSA1 be used in DC-coupled RF paths?

Yes, its 150 V reverse voltage rating and low 20 nA leakage at 20 V allow safe DC blocking and bias injection in DC-coupled architectures. However, the 0.22 pF capacitance at 0 V must be accounted for in impedance matching networks below 100 MHz to avoid resonance shifts.

How does carrier lifetime affect distortion in multi-carrier LTE signals?

A 1550 ns carrier lifetime suppresses third-order intermodulation (IMD3) by ensuring uniform carrier sweep across the I-region during RF half-cycles. This reduces memory effects that cause spectral regrowth-verified in 20 MHz LTE ACLR tests showing >45 dBc adjacent channel leakage at 23 dBm POUT.

Is the SOT23-3 package suitable for reflow soldering in high-frequency PCB assemblies?

Yes-Infineon qualifies BAR6405E6327HTSA1 for standard Pb-free reflow profiles (JEDEC J-STD-020). The SOT23-3's 1.0 mm height and defined pad layout minimize solder voiding; however, RF ground via placement within 0.5 mm of the cathode pad is required to maintain <0.1 nH parasitic inductance at 2.5 GHz.