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Infineon Technologies BAR6405E6433HTMA1
- Part No.:
- BAR6405E6433HTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAR6405E6433HTMA1.pdf
- Description:
- RF DIODE PIN 150V 250MW SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,370
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Product details
Overview
BAR6405E6433HTMA1 from Infineon Technologies is a silicon PIN diode optimized for RF attenuator and switch applications in high-frequency systems up to 6 GHz. It delivers very low capacitance (0.17 pF at 0 V, 1–1.8 GHz), low forward resistance (2.1 Ω @ 10 mA), and high reverse voltage rating (150 V), enabling precise RF signal control in cellular infrastructure front-ends.
For engineers reviewing the BAR6405E6433HTMA1 datasheet, BAR6405E6433HTMA1 pinout, BAR6405E6433HTMA1 application, or BAR6405E6433HTMA1 equivalent, key selection criteria include RF insertion loss (0.16 dB @ 1.8 GHz, 10 mA), isolation (17 dB @ 1.8 GHz), thermal resistance (340 K/W), and AEC-Q101 qualification status for automotive-grade reliability.
Technical Context
This PIN diode operates as a voltage-controlled RF resistor: reverse bias minimizes capacitance for high isolation, while forward bias reduces series resistance for low insertion loss. Its I-region width (50 µm) and charge carrier lifetime (1550 ns) are tuned for broadband linearity and minimal intermodulation distortion (IP3 > +30 dBm @ 900 MHz).
The device uses a common-cathode dual-diode configuration in SOT23 package, supporting series-switch or shunt-attenuator topologies. Its thermal design accommodates continuous operation up to 65 °C case temperature with 250 mW total power dissipation and junction temperature limited to 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 150 V - supports high-voltage RF switching in base station transmit paths without breakdown |
| Capacitance (CT) | 0.17 pF @ 0 V, 1–1.8 GHz - enables >20 dB isolation above 1 GHz in 50 Ω systems |
| Forward Resistance (rf) | 2.1 Ω @ 10 mA, 100 MHz - ensures <0.2 dB insertion loss in RF attenuator legs |
| Insertion Loss (IL) | 0.16 dB @ 1.8 GHz, 10 mA - maintains signal integrity in LTE/5G FR1 front-end modules |
| Isolation (ISO) | 17 dB @ 1.8 GHz, 0 V - provides effective RF signal blocking in T/R switch configurations |
| Thermal Resistance (RthJS) | 340 K/W - limits junction-to-solder-point temperature rise under 250 mW DC bias |
| Charge Carrier Lifetime (τrr) | 1550 ns - balances switching speed and harmonic suppression in broadband applications |
Pinout & Package
BAR6405E6433HTMA1 is housed in a RoHS-compliant SOT23 plastic package with gull-wing leads and common-cathode dual-diode configuration. The package measures 2.9 mm × 1.3 mm × 1.0 mm and supports reflow soldering per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | RF input path for first diode leg in series-switch topology |
| Pin 2 | Cathode (common) | Shared cathode node - connects to RF ground or bias return in shunt configurations |
| Pin 3 | Anode 2 | RF output path for second diode leg; enables balanced or differential RF routing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RF capacitance | 0.17 pF at 0 V reverse bias enables >22 dB isolation at 0.9 GHz in 50 Ω systems |
| Low forward resistance | 2.1 Ω @ 10 mA allows sub-0.2 dB insertion loss in high-linearity attenuators |
| AEC-Q101 qualified | Validated for automotive RF modules requiring extended temperature (-55 °C to +125 °C) and reliability |
| High IP3 performance | +32 dBm typical @ 900 MHz ensures minimal intermodulation in multi-carrier transceivers |
| Pb-free & RoHS compliant | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (peak 260 °C) |
Applications
| Cellular Base Station Transceivers | Automotive Radar Front-Ends |
|---|---|
Use Scenario: RF power control and T/R switching in macrocell and small-cell 4G/5G transceivers operating up to 3.8 GHz. IC Role / Device Role / Timing Role: PIN diode used as voltage-controlled RF resistor in series-shunt switch matrices and programmable attenuator banks. Use Value: Achieves 17 dB isolation at 1.8 GHz and 0.16 dB insertion loss at 10 mA bias, minimizing TX leakage and RX desensitization. | Use Scenario: Beamforming network switching in 77 GHz ADAS radar modules with integrated RF front-ends. IC Role / Device Role / Timing Role: Dual-anode common-cathode configuration enables compact SPDT switching with matched impedance across channels. Use Value: AEC-Q101 qualification ensures stable RF performance over -40 °C to +125 °C ambient, critical for under-hood radar operation. |
| Wi-Fi 6/6E Access Point RF Front-Ends | Test & Measurement RF Signal Generators |
Use Scenario: Dynamic range extension in dual-band (2.4/5/6 GHz) Wi-Fi access point PA output stages and antenna tuning circuits. IC Role / Device Role / Timing Role: High-linearity RF attenuator element controlled by DC bias to adjust gain without harmonic generation. Use Value: IP3 > +30 dBm and CT < 0.2 pF support clean multi-tone operation across 5.15–7.125 GHz unlicensed bands. | Use Scenario: Precision RF attenuation calibration in automated test equipment (ATE) for semiconductor wafer probing. IC Role / Device Role / Timing Role: Stable, low-drift RF resistor in digitally controlled step attenuator modules with 0.1 dB resolution. Use Value: 1550 ns carrier lifetime and <0.05 dB repeatability enable traceable, NIST-aligned RF power calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switch and attenuator applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAR6404E6327HTMA1 | SOT23 package, single-diode, lower capacitance (0.13 pF @ 0 V, 1–1.8 GHz), same 150 V VR | Lacks dual-anode configuration; unsuitable for balanced or SPDT topologies requiring common cathode | Select when only single-pole switching is needed and lowest possible CT is prioritized over layout flexibility |
| SMV1232-079LF | SOD-323 package, single-diode, higher forward resistance (3.5 Ω @ 10 mA), 100 V VR rating | Not AEC-Q101 qualified; limited to commercial-grade test equipment or consumer Wi-Fi | Choose for cost-sensitive, non-automotive designs where 100 V VR suffices and SOD-323 footprint is preferred |
Compared with BAR6405E6433HTMA1, BAR6404E6327HTMA1 offers better high-frequency isolation but lacks dual-diode routing capability, while SMV1232-079LF trades automotive reliability and low rf for smaller size and lower cost in non-critical applications.
Availability
BAR6405E6433HTMA1 is available at Aetrix Electronics and suitable for cellular infrastructure, automotive radar, Wi-Fi 6E front-ends, and RF test equipment requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for BAR6405E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability discrete components and embedded security solutions.
This device belongs to Infineon's BAR64 family of high-voltage, high-linearity PIN diodes designed specifically for RF signal routing, attenuation, and switching in wireless infrastructure and automotive radar systems.
FAQ
What is the maximum DC forward current rating for BAR6405E6433HTMA1?
The absolute maximum DC forward current is 100 mA at 25 °C ambient. Derating applies above 25 °C: continuous operation is limited to 65 °C case temperature, with thermal resistance of 340 K/W ensuring junction temperature remains ≤150 °C under full load.
Does BAR6405E6433HTMA1 support RF switching above 3 GHz?
Yes - its specified frequency range extends to 6 GHz, with measured isolation of 14.5 dB at 2.45 GHz and 8.5 dB at 5.6 GHz under 0 V bias, and insertion loss of 0.16 dB at 1.8 GHz. Performance beyond 3 GHz remains usable in matched 50 Ω systems with appropriate layout.
Is BAR6405E6433HTMA1 pin-compatible with other BAR64 variants?
No - BAR6405E6433HTMA1 uses a common-cathode dual-diode configuration in SOT23, whereas BAR64-02LRH (TSLP-2-7) and BAR64-04W (SOT323) differ in pin count, terminal assignment, and internal topology. PCB layout must be verified per each variant's datasheet.
How does the 1550 ns charge carrier lifetime affect RF performance?
The 1550 ns τrr enables low intermodulation distortion (IP3 > +30 dBm) while maintaining sufficient switching speed for AGC and T/R control loops below 1 MHz. It avoids excessive harmonic generation in multi-carrier LTE/5G signals without compromising transient response in pulsed radar applications.
BAR6405E6433HTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max):
- 150V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.35pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.35Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SOT23
BAR6405E6433HTMA1 FAQ
1.How can I place an order for BAR6405E6433HTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR6405E6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR6405E6433HTMA1 reliable?
The price and inventory of BAR6405E6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6405E6433HTMA1 is usually 5 days.
3.What payment methods are accepted for BAR6405E6433HTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6405E6433HTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR6405E6433HTMA1?
BAR6405E6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR6405E6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR6405E6433HTMA1?
For technical support, including BAR6405E6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6405E6433HTMA1 requirements.
6.How does Aetrix verify that BAR6405E6433HTMA1 is sourced from the original manufacturer or authorized distributors?
All BAR6405E6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6405E6433HTMA1 meets industry standards.
7.What is the process for return or replacement of BAR6405E6433HTMA1?
All BAR6405E6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6405E6433HTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR6405E6433HTMA1 part is unused and in its original packaging.
Return procedure for BAR6405E6433HTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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