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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAR6405WE6433HTMA1

Name: BAR6405WE6433HTMA1
Brand: Infineon Technologies
SKU: BAR6405WE6433HTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAR6405WE6433HTMA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: SC-70, SOT-323

Datasheet:: BAR6405WE6433HTMA1.pdf

Description:: RF DIODE PIN 150V 250MW SOT323-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,273

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Product details

Overview

BAR6405WE6433HTMA1 from Infineon Technologies is a silicon PIN diode optimized for RF attenuator and switch applications in high-frequency systems up to 6 GHz. It delivers 0.17 pF zero-bias capacitance at 1–1.8 GHz, 2.1 Ω forward resistance at 10 mA, and supports 150 V reverse voltage with AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the BAR6405WE6433HTMA1 datasheet, BAR6405WE6433HTMA1 pinout, BAR6405WE6433HTMA1 application, or BAR6405WE6433HTMA1 equivalent, key selection criteria include RF insertion loss (0.16 dB @ 1.8 GHz, 10 mA), isolation (17 dB @ 1.8 GHz), low signal distortion, thermal resistance (R_thJS ≤ 340 K/W), and SOD323 package compatibility with high-density RF layouts.

Technical Context

This PIN diode operates as a voltage-controlled RF resistor: reverse bias sets high-impedance (low C_T, high R_P), while forward bias establishes low-resistance conduction path (r_f = 2.1 Ω @ 10 mA). Its I-region width (50 µm) and carrier lifetime (1550 ns) are tuned for fast switching and minimal intermodulation distortion in broadband RF paths.

The device is configured as a single-diode element in SOD323 package with anode-cathode polarity confirmed per Infineon's marking "PSs" and layout. It is rated for 250 mW total power dissipation at T_S ≤ 65 °C and junction temperature up to 150 °C, enabling stable operation in compact front-end modules.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	1 MHz to 6 GHz - supports cellular (900/1800/2450 MHz), Wi-Fi (5.6 GHz), and automotive radar bands.
Zero-Bias Capacitance	0.17 pF @ 1–1.8 GHz - enables minimal RF loading and high isolation in shunt/series switch topologies.
Forward Resistance	2.1 Ω @ 10 mA, 100 MHz - ensures low insertion loss (0.16 dB @ 1.8 GHz) in current-controlled attenuators.
Reverse Voltage	150 V - supports high-voltage RF switching in antenna tuning and TR modules without breakdown.
Thermal Resistance	R_thJS ≤ 340 K/W - allows sustained 100 mA forward current under board-level thermal constraints (T_S ≤ 65 °C).
Isolation	17 dB @ 1.8 GHz, 0 V - defines minimum off-state signal leakage in series-switch configurations.

Pinout & Package

BAR6405WE6433HTMA1 is housed in a surface-mount SOD323 (SC-76) package, measuring 1.7 mm × 1.25 mm × 0.95 mm, with gull-wing leads and RoHS-compliant matte tin plating. The package supports reflow soldering per JEDEC J-STD-020 and provides mechanical robustness for automotive vibration environments.

Pin/Terminal	Circuit Role	Design Meaning
Anode (A)	Forward bias input / RF signal entry in series configuration	Connects to control current source; determines forward conduction path and RF attenuation level.
Cathode (K)	Return path / RF ground reference in shunt configuration	Provides low-inductance return for RF signals; critical for maintaining impedance match (Z₀ = 50 Ω) in high-frequency layouts.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including infotainment antennas and ADAS radar front-ends.
Low distortion RF switching	IP3 > +40 dBm @ 900 MHz - preserves signal integrity in multi-carrier LTE/Wi-Fi coexistence scenarios.
Ultra-low zero-bias capacitance	0.13–0.17 pF across 1–1.8 GHz - minimizes parasitic coupling in wideband matching networks.
Fast carrier lifetime	1550 ns - enables sub-microsecond switching transitions compatible with TDD frame timing.

Applications

Automotive Antenna Tuning

Cellular Front-End Module

Use Scenario: Dynamic impedance matching of AM/FM/DAB antennas across vehicle body variations and frequency bands.

IC Role / Device Role / Timing Role: PIN diode used as voltage-controlled RF resistor in series-shunt tuning network.

Use Value: Enables 150 V standoff and <0.2 dB insertion loss to maintain SNR in weak-signal reception.

Use Scenario: Transmit/receive (TR) switching in LTE/WCDMA handsets and small-cell base stations.

IC Role / Device Role / Timing Role: Single-pole double-throw (SPDT) switch element controlling RF path between PA and antenna.

Use Value: Delivers 17 dB isolation @ 1.8 GHz and 0.16 dB loss @ 10 mA bias-critical for Tx leakage suppression and Rx sensitivity.

Wi-Fi 5/6 Band-Switching

Radar Level Shifter

Use Scenario: Frequency band selection (2.4 GHz / 5 GHz / 5.6 GHz) in dual-band access points and client devices.

IC Role / Device Role / Timing Role: Current-controlled attenuator in filter bank switching path.

Use Value: Maintains flat 0.3 dB loss variation across 2.4–5.6 GHz with <0.17 pF C_T stability-ensures EVM compliance.

Use Scenario: DC bias injection and RF isolation in 77 GHz automotive radar transceiver IC interfaces.

IC Role / Device Role / Timing Role: High-voltage level shifter isolating digital control logic from RF front-end supply domains.

Use Value: Withstands 150 V reverse bias and exhibits <3 Ω r_f at 100 mA-supports fast, low-noise bias sequencing during chirp cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BAR6404WE6327HTSA1	SOD323 package, same AEC-Q101 rating, but higher R_thJS (≤340 K/W vs. ≤250 K/W for -04W variant); 0.23 pF C_T @ 1 MHz.	Lower isolation (14.5 dB @ 2.45 GHz) and higher insertion loss (0.23 dB @ 1.8 GHz) limit use in high-isolation TR switches.	Select when cost sensitivity outweighs 0.07 dB loss penalty and thermal margin is sufficient.
SMV1232-079LF	SC-79 (SOD-523) package, 0.15 pF C_T @ 1 GHz, but unqualified per AEC-Q101 and rated only to 50 V VR.	Lacks automotive qualification and high-voltage capability-unsuitable for antenna tuning in EV platforms.	Prefer only in non-automotive consumer Wi-Fi modules where space is constrained and voltage stress <50 V.

Compared with BAR6404WE6327HTSA1 and SMV1232-079LF, BAR6405WE6433HTMA1 uniquely balances AEC-Q101 compliance, 150 V ruggedness, and 0.17 pF/2.1 Ω RF performance-making it the optimal choice for thermally constrained, safety-critical automotive RF front-ends.

Availability

BAR6405WE6433HTMA1 is available at Aetrix Electronics and suitable for automotive antenna tuning, cellular front-end modules, Wi-Fi band-switching, and radar level-shifting applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BAR6405WE6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with leadership in high-reliability discrete and integrated solutions.

The BAR64 family targets high-frequency RF control functions-including attenuators, switches, and tuners-in automotive, industrial, and wireless infrastructure, emphasizing low distortion, high voltage tolerance, and AEC-Q101 compliance.

FAQ

What is the maximum continuous forward current for BAR6405WE6433HTMA1?

The maximum continuous forward current is 100 mA at T_S ≤ 65 °C. Derating applies above this case temperature: current must be reduced linearly to 0 mA at 125 °C ambient, per the IF vs. T_S curve for BAR64-04/05/06 variants in the official datasheet.

Does BAR6405WE6433HTMA1 support pulsed RF operation?

Yes-it supports pulsed operation with peak current up to 120 mA for pulse widths ≥10 µs and duty cycle D = 0, based on its permissible pulse load curves. Thermal design must account for R_thJS ≤ 340 K/W and transient junction temperature limits.

How does the 0.17 pF capacitance impact matching network design?

This ultra-low zero-bias capacitance minimizes parasitic reactance in shunt configurations, allowing simpler L-C matching networks with fewer components. At 1.8 GHz, it contributes <0.5° phase error in 50 Ω systems-enabling broadband matching across 1710–2170 MHz LTE bands without recalibration.

Is BAR6405WE6433HTMA1 pin-compatible with other BAR64 variants in SOD323?

Yes-all BAR64-x5 and BAR64-x5W variants in SOD323 share identical pinout (anode/cathode), footprint, and solder pad layout. However, electrical differences (e.g., C_T, r_f, R_thJS) require validation in the target circuit before substitution.

BAR6405WE6433HTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: PIN - 1 Pair Common Cathode

Voltage - Peak Reverse (Max):: 150V

Current - Max:: 100 mA

Capacitance @ Vr, F:: 0.35pF @ 20V, 1MHz

Resistance @ If, F:: 1.35Ohm @ 100mA, 100MHz

Power Dissipation (Max):: 250 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOT323

BAR6405WE6433HTMA1 FAQ

1.How can I place an order for BAR6405WE6433HTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6405WE6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6405WE6433HTMA1 reliable?

The price and inventory of BAR6405WE6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6405WE6433HTMA1 is usually 5 days.

3.What payment methods are accepted for BAR6405WE6433HTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6405WE6433HTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR6405WE6433HTMA1?

BAR6405WE6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6405WE6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6405WE6433HTMA1?

For technical support, including BAR6405WE6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6405WE6433HTMA1 requirements.

6.How does Aetrix verify that BAR6405WE6433HTMA1 is sourced from the original manufacturer or authorized distributors?

All BAR6405WE6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6405WE6433HTMA1 meets industry standards.

7.What is the process for return or replacement of BAR6405WE6433HTMA1?

All BAR6405WE6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6405WE6433HTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6405WE6433HTMA1 part is unused and in its original packaging.

Return procedure for BAR6405WE6433HTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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