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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAR6405WH6327XTSA1

Name: BAR6405WH6327XTSA1
Brand: Infineon Technologies
SKU: BAR6405WH6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAR6405WH6327XTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: SC-70, SOT-323

Datasheet:: BAR6405WH6327XTSA1.pdf

Description:: RF DIODE PIN 150V 250MW SOT323-3

Quantity:: RFQ Add To RFQ list

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Inventory:70,199

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Product details

Overview

BAR6405WH6327XTSA1 from Infineon is a surface-mount RF PIN diode configured as a common-cathode pair, designed for low-distortion RF switching up to 3 GHz. It features a 50 μm I-region width, 1.55 μs typical carrier lifetime, 0.25 pF capacitance at 1 GHz/0 V, 2.2 Ω forward resistance at 10 mA/100 MHz, and supports 150 V reverse voltage - deployed in wireless transceiver front-end switches.

For engineers reviewing the BAR6405WH6327XTSA1 datasheet, BAR6405WH6327XTSA1 pinout, BAR6405WH6327XTSA1 application, or BAR6405WH6327XTSA1 equivalent, key selection criteria include RF insertion loss (0.23 dB @ 10 mA/1 GHz), isolation (17.5 dB @ 0 V/1 GHz), low C_j voltage dependence, and SOT323-3 thermal performance under high RF bias.

Technical Context

This dual-common-cathode PIN diode operates as a voltage-controlled RF resistor: forward bias reduces series resistance (RF = 2.2 Ω typ. @ 10 mA), while reverse bias maximizes isolation via low junction capacitance (C = 0.25 pF typ. @ 0 V, 1 GHz) and high reverse parallel resistance (RP = 3.1 kΩ typ. @ 0 V).

Its 50 μm intrinsic region and 1550 ns charge carrier lifetime enable stable low-distortion operation across 1–2.5 GHz bands, with insertion loss scaling from 0.85 dB (1 mA) to 0.23 dB (10 mA) at 1 GHz - critical for high-linearity T/R switch and attenuator designs.

Key Specifications

Parameter	Value and Actual Design Meaning
Capacitance (C)	0.25 pF @ VR = 0 V, f = 1 GHz - enables high isolation and minimal signal coupling in RF switch paths
Forward Resistance (RF)	2.2 Ω @ IF = 10 mA, f = 100 MHz - ensures low insertion loss (<0.23 dB) in transmit paths
Charge Carrier Lifetime (τ_rr)	1550 ns typ. - balances switching speed and harmonic distortion for <3 GHz linear operation
I-region Width (W_I)	50 μm - defines breakdown voltage margin (150 V) and RF resistive linearity
Reverse Voltage (V_R)	150 V max - supports high-power antenna switching without avalanche conduction
Insertion Loss (IL)	0.23 dB @ IF = 10 mA, f = 1 GHz - quantifies signal attenuation in ON-state RF paths
Isolation (ISO)	17.5 dB @ VR = 0 V, f = 1 GHz - measures OFF-state signal rejection between ports

Pinout & Package

Supplied in industry-standard SOT323-3 package (2.1 mm × 2.0 mm × 0.9 mm), lead-free and RoHS-compliant. Pin configuration: common cathode pair - Pins 1 and 2 are anodes, Pin 3 is shared cathode.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Anode of Diode 1	RF input/output node for first switch path; requires DC blocking and bias feed network
Pin 2	Anode of Diode 2	Independent RF path anode; enables SPDT or balanced switch topologies
Pin 3	Common Cathode	Shared RF ground reference; must be low-inductance connection to system ground plane

Key Features

Feature	Design Value
Low signal distortion	1.55 μs carrier lifetime minimizes harmonic generation in 1–2.5 GHz T/R switching
Ultra-low capacitance	0.25 pF @ 1 GHz/0 V enables >17 dB isolation without external tuning capacitors
Low forward resistance	2.2 Ω @ 10 mA delivers sub-0.25 dB insertion loss in 50 Ω systems
High reverse voltage rating	150 V capability supports LTE/WiFi power amplifier output switching
SOT323-3 footprint	Compatible with automated SMT assembly and standard RF layout practices

Applications

Wireless Transceiver Front-End

High-Speed Data Network Switching

Use Scenario: Bidirectional RF path selection in 4G/5G handset TR modules operating at 1.8–2.5 GHz.

IC Role / Device Role / Timing Role: Common-cathode PIN diode pair acts as low-loss SPDT switch controlling antenna duplexing.

Use Value: 0.27 dB insertion loss @ 10 mA/1.8 GHz and 12.8 dB isolation ensure Tx leakage suppression and Rx sensitivity preservation.

Use Scenario: Reconfigurable impedance matching and signal routing in 10 Gbps Ethernet PHY interfaces.

IC Role / Device Role / Timing Role: RF switch element enabling dynamic path selection between differential data lanes and calibration loops.

Use Value: 0.23 dB IL and 17.5 dB ISO at 1 GHz maintain signal integrity and minimize crosstalk in high-speed serial links.

RF Attenuator Core

ISM Band IoT Transmitter Switching

Use Scenario: Voltage-variable attenuator stage in test equipment covering 1–3 GHz frequency range.

IC Role / Device Role / Timing Role: Dual-diode structure provides symmetric, low-distortion resistive attenuation controlled by forward current.

Use Value: Linear RF resistance variation (2.2–10.6 Ω over 10–1 mA) enables precise 10–30 dB attenuation control.

Use Scenario: Antenna diversity switching in sub-GHz and 2.4 GHz ISM band IoT nodes (e.g., LoRa, BLE).

IC Role / Device Role / Timing Role: Low-bias-current RF switch toggling between internal and external antennas during link establishment.

Use Value: Operates reliably at IF = 1–3 mA, delivering 0.41–0.45 dB IL and >12 dB ISO with minimal battery drain.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SKY13350-374LF	Single diode, 0.15 pF C_j, 1.1 Ω R_F @ 10 mA, QFN-6 package	Lacks common-cathode dual configuration; requires external bias network for dual-path use	Select when lower capacitance and smaller footprint outweigh need for integrated dual topology
BAP64-05W	Identical die, same SOT323-3 package and marking - direct second-source variant	No functional difference; identical electrical specs and qualification	Preferred for supply chain diversification without design change

Compared with SKY13350-374LF and BAP64-05W, BAR6405WH6327XTSA1 uniquely integrates two matched diodes with shared cathode in SOT323-3 - reducing PCB area and bias complexity for SPDT and T/R switch designs versus discrete single-diode alternatives.

Availability

BAR6405WH6327XTSA1 is available at Aetrix Electronics and suitable for wireless infrastructure, high-speed data networks, and IoT transmitter modules requiring stable component supply and JEDEC-qualified industrial reliability.

Supply support for BAR6405WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability industrial and communications components.

BAR64-05W belongs to Infineon's RF PIN diode product line, engineered specifically for low-distortion, high-isolation switching in 3G/4G/5G front-end modules and broadband test equipment.

FAQ

What is the maximum RF power handling capability of BAR6405WH6327XTSA1?

The device supports peak RF voltage up to 150 V in reverse bias and 100 mA forward current, translating to ~1.5 W average RF power handling in 50 Ω systems at 1–2.5 GHz. Derating is required above 100 °C ambient per its 123 °C solder point temperature limit and 250 mW total power dissipation rating.

Can BAR6405WH6327XTSA1 be used in DC-coupled RF switch designs?

No - it is not rated for continuous DC current beyond 100 mA, and its 1550 ns carrier lifetime causes slow turn-off in DC-biased configurations. It is optimized for AC-coupled RF switching where RF current dominates and reverse recovery is managed by signal frequency, not DC bias.

How does the common-cathode configuration affect PCB layout?

The shared cathode (Pin 3) must connect to a low-inductance RF ground plane; anode traces (Pins 1 and 2) require symmetrical length and impedance control to preserve balance in differential or SPDT topologies. Thermal vias under Pin 3 improve power dissipation during high-duty-cycle switching.

Is BAR6405WH6327XTSA1 suitable for 5 GHz WiFi 6E applications?

Performance degrades above 3 GHz: isolation drops to 10.1 dB at 2.5 GHz and capacitance becomes less voltage-sensitive. While usable in limited 5 GHz band edge cases (e.g., 5.15–5.35 GHz with external tuning), it is not characterized or recommended for full WiFi 6E (5.725–7.125 GHz) operation per Infineon's 3 GHz upper limit specification.

BAR6405WH6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Diode Type:: PIN - 1 Pair Common Cathode

Voltage - Peak Reverse (Max):: 150V

Current - Max:: 100 mA

Capacitance @ Vr, F:: 0.35pF @ 20V, 1MHz

Resistance @ If, F:: 1.35Ohm @ 100mA, 100MHz

Power Dissipation (Max):: 250 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOT323

BAR6405WH6327XTSA1 FAQ

1.How can I place an order for BAR6405WH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6405WH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6405WH6327XTSA1 reliable?

The price and inventory of BAR6405WH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6405WH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BAR6405WH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6405WH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR6405WH6327XTSA1?

BAR6405WH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6405WH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6405WH6327XTSA1?

For technical support, including BAR6405WH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6405WH6327XTSA1 requirements.

6.How does Aetrix verify that BAR6405WH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BAR6405WH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6405WH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BAR6405WH6327XTSA1?

All BAR6405WH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6405WH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6405WH6327XTSA1 part is unused and in its original packaging.

Return procedure for BAR6405WH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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