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Infineon Technologies BAR 64-05W H6433
- Part No.:
- BAR 64-05W H6433
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAR 64-05W H6433.pdf
- Description:
- RF DIODE PIN 150V 250MW SOT323-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,807
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Product details
Overview
BAR 64-05W H6433 from Infineon Technologies is a silicon PIN diode optimized for RF attenuator and switch applications in high-frequency systems up to 6 GHz. It delivers very low capacitance (0.17 pF at 0 V, 1–1.8 GHz), low forward resistance (2.1 Ω @ 10 mA, 100 MHz), and high reverse voltage rating (150 V), operating reliably from –55 °C to +125 °C in SOT323 package.
For engineers reviewing the BAR 64-05W H6433 datasheet, BAR 64-05W H6433 pinout, BAR 64-05W H6433 application, or BAR 64-05W H6433 equivalent, key selection criteria include RF insertion loss (0.16 dB @ 10 mA, 1.8 GHz), isolation (17 dB @ 1.8 GHz), thermal resistance (340 K/W), and AEC-Q101 qualification status for automotive-grade reliability.
Technical Context
This PIN diode functions as a voltage-controlled RF resistor, where forward bias current modulates series impedance while reverse bias enables high-isolation switching. Its I-region width (50 µm) and charge carrier lifetime (1550 ns) are engineered to balance speed and linearity across 1 MHz–6 GHz.
The device operates in common-cathode configuration per its SOT323 package marking and datasheet designation, supporting series-switch topologies in 50 Ω RF signal paths. Its low distortion and high IP3 (e.g., >30 dBm @ 900/1800 MHz) make it suitable for cellular front-end modules and broadband test equipment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 150 V - supports high-voltage RF switching without breakdown in antenna tuning or TR switch designs |
| Capacitance (CT) | 0.17 pF @ 0 V, 1–1.8 GHz - minimizes signal coupling and phase shift in GHz-band filters and matching networks |
| Forward Resistance (rf) | 2.1 Ω @ 10 mA, 100 MHz - enables low-loss attenuation control with minimal insertion loss (0.16 dB @ 1.8 GHz) |
| Isolation (ISO) | 17 dB @ 0 V, 1.8 GHz - provides effective signal blocking in transmit/receive path isolation circuits |
| Thermal Resistance (RthJS) | 340 K/W - defines junction-to-solder-point thermal path for power dissipation management at 250 mW Ptot |
| Charge Carrier Lifetime (τrr) | 1550 ns - ensures predictable turn-off behavior and low intermodulation distortion in linear RF control |
Pinout & Package
SOT323 package: surface-mount, 3-terminal leaded plastic case with gull-wing leads; dimensions 2.1 × 1.25 × 0.95 mm; RoHS-compliant, Pb-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | RF input / control terminal | Forward bias entry point; connects to RF source or control current in series-switch configuration |
| Cathode (Pin 2) | Common reference / RF return | Shared cathode node for multi-diode configurations; ties to ground or RF return path |
| No-Connect (Pin 3) | Internal die pad / thermal slug | Not electrically connected; serves mechanical anchoring and thermal conduction in PCB layout |
Key Features
| Feature | Design Value |
|---|---|
| High-frequency operation | Validated performance up to 6 GHz - enables use in 5G FR1, Wi-Fi 6E, and satellite communication front ends |
| AEC-Q101 qualified | Qualified for automotive applications including infotainment RF switches and ADAS radar modules |
| Low signal distortion | IP3 >30 dBm at 900/1800 MHz - preserves signal integrity in multi-carrier LTE and NR transceivers |
| Stable thermal performance | Rated junction temperature of 150 °C with 125 °C max operating ambient - supports under-hood deployment |
Applications
| Cellular Front-End Module | Automotive Radar Switching |
|---|---|
Use Scenario: Dynamic antenna tuning and band selection in LTE/5G handsets and base stations. IC Role / Device Role / Timing Role: PIN diode used as voltage-controlled RF resistor in series-shunt switch matrix. Use Value: Achieves <0.2 dB insertion loss and >17 dB isolation at 1.8–3.5 GHz, enabling compact multi-band PA output matching. | Use Scenario: Transmit/receive path isolation in 77 GHz automotive radar transceivers. IC Role / Device Role / Timing Role: High-reliability RF switch element in TR module, controlled by DC bias sequencing. Use Value: AEC-Q101 qualification and 150 V VR rating ensure robust operation under ESD and load-dump conditions. |
| Wi-Fi 6E Access Point | Broadband Test Equipment |
Use Scenario: Channel-selective filtering and gain control in dual-band (2.4/5/6 GHz) MIMO access points. IC Role / Device Role / Timing Role: Low-capacitance (0.17 pF) shunt-switch element in reconfigurable filter banks. Use Value: Minimal parasitic loading preserves Q-factor of high-frequency BAW/SAW filters across 5.925–7.125 GHz UNII-8 band. | Use Scenario: Precision RF attenuator stages in vector network analyzers and signal generators. IC Role / Device Role / Timing Role: Linearized current-controlled resistor in calibrated step attenuator architecture. Use Value: 1550 ns carrier lifetime and low distortion enable accurate amplitude control with <0.05 dB step error up to 6 GHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAR 64-05 | Same electrical specs but SOT323 package without AEC-Q101 qualification; RthJS = 340 K/W identical | Not rated for automotive environments; suitable for industrial/commercial RF modules only | Select when AEC-Q101 is not required and cost sensitivity outweighs qualification needs |
| BAR 64-06W | Higher forward resistance (2.8 Ω @ 10 mA); same capacitance (0.17 pF), VR (150 V), and package (SOT323) | Lower RF efficiency in high-current attenuator stages; better suited for lower-power bias control | Prefer for low-current (<5 mA) bias schemes where thermal margin is constrained |
Compared with BAR 64-05 and BAR 64-06W, BAR 64-05W H6433 uniquely combines AEC-Q101 qualification, 2.1 Ω forward resistance, and 0.17 pF capacitance - making it optimal for automotive radar and high-efficiency 5G front-end switching where reliability and RF loss are co-constrained.
Availability
BAR 64-05W H6433 is available at Aetrix Electronics and suitable for cellular infrastructure, automotive radar, Wi-Fi 6E access points, and broadband test equipment requiring stable component supply and long-term lifecycle support.
Supply support for BAR 64-05W H6433 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification to ISO/TS 16949 and AEC standards.
BAR 64-05W H6433 belongs to Infineon's high-frequency PIN diode product line, designed specifically for RF switching and attenuation in automotive radar, 5G infrastructure, and high-speed wireless communication systems.
FAQ
What is the maximum RF frequency range supported by BAR 64-05W H6433?
The BAR 64-05W H6433 is characterized and specified for operation from 1 MHz up to 6 GHz. Performance data-including capacitance, forward resistance, isolation, and insertion loss-is validated across this full range, with typical values published at 100 MHz, 1 GHz, 1.8 GHz, 2.45 GHz, and 5.6 GHz in the official datasheet.
Does BAR 64-05W H6433 require external bias circuitry for RF switching?
Yes - it requires a DC bias network to set forward or reverse bias conditions. A series current-limiting resistor and optional RF choke are needed to isolate DC control from the RF path. The device does not integrate bias control logic; external voltage/current sources must be applied to the anode relative to the cathode.
Is BAR 64-05W H6433 compatible with lead-free reflow soldering processes?
Yes - it is RoHS-compliant and qualified for standard lead-free reflow profiles (J-STD-020, peak temperature ≤ 260 °C). The SOT323 package withstands three reflow cycles, and the device's 150 °C maximum junction temperature allows safe operation under typical PCB thermal mass conditions.
How does BAR 64-05W H6433 differ from BAR 64-05 in terms of reliability testing?
BAR 64-05W H6433 is fully qualified to AEC-Q101 for stress tests including HTGB, AC-H3TRB, TC, and UHAST, whereas BAR 64-05 lacks this qualification. Both share identical electrical specs and SOT323 packaging, but only BAR 64-05W H6433 carries the automotive-grade reliability documentation and screening required for safety-critical vehicle systems.
BAR 64-05W H6433 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max):
- 150V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.35pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.35Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SOT323
BAR 64-05W H6433 FAQ
1.How can I place an order for BAR 64-05W H6433 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR 64-05W H6433 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR 64-05W H6433 reliable?
The price and inventory of BAR 64-05W H6433 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR 64-05W H6433 is usually 5 days.
3.What payment methods are accepted for BAR 64-05W H6433?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR 64-05W H6433 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR 64-05W H6433?
BAR 64-05W H6433 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR 64-05W H6433 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR 64-05W H6433?
For technical support, including BAR 64-05W H6433 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR 64-05W H6433 requirements.
6.How does Aetrix verify that BAR 64-05W H6433 is sourced from the original manufacturer or authorized distributors?
All BAR 64-05W H6433 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR 64-05W H6433 meets industry standards.
7.What is the process for return or replacement of BAR 64-05W H6433?
All BAR 64-05W H6433 units undergo pre-shipment inspection (PSI). If there is an issue with BAR 64-05W H6433, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR 64-05W H6433 part is unused and in its original packaging.
Return procedure for BAR 64-05W H6433:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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