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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAR6406E6327HTSA1

Name: BAR6406E6327HTSA1
Brand: Infineon Technologies
SKU: BAR6406E6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAR6406E6327HTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BAR6406E6327HTSA1.pdf

Description:: RF DIODE PIN 150V 250MW SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BAR6406E6327HTSA1 from Infineon is a surface-mount RF PIN diode configured as a common-anode pair, designed for low-distortion RF switching up to 3 GHz. It features a 50 μm I-region width, 1.55 μs typical carrier lifetime, 0.22 pF capacitance at 1 GHz/0 V, 2.3 Ω forward resistance at 10 mA/100 MHz, and supports 150 V reverse voltage - deployed in wireless front-end antenna switching.

For engineers reviewing the BAR6406E6327HTSA1 datasheet, BAR6406E6327HTSA1 pinout, BAR6406E6327HTSA1 application, or BAR6406E6327HTSA1 equivalent, key selection criteria include RF insertion loss (0.24 dB typ. at 10 mA/1 GHz), isolation (17.3 dB typ. at 1 GHz), low C_j voltage dependence, SOT23-3 thermal limits (T_J ≤ 150 °C), and JEDEC industrial qualification.

Technical Context

This dual-common-anode PIN diode operates as a voltage-controlled RF switch or attenuator element, leveraging its low-capacitance (0.21–0.23 pF) and low-forward-resistance (2.2–2.8 Ω @ 10 mA/100 MHz) characteristics to minimize signal distortion in high-frequency paths. Its 1.55 μs carrier lifetime enables stable charge control under RF bias conditions.

The device uses a silicon PIN structure with a precisely defined 50 μm intrinsic region to balance switching speed and RF hold-off capability. Reverse parallel resistance exceeds 2.4 kΩ at 0 V up to 2.5 GHz, supporting high isolation in transmit/receive T/R switching configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
Capacitance (C_j)	0.22 pF at VR = 0 V, f ≥ 1 GHz - enables minimal RF loading in broadband switch nodes
Forward Resistance (R_F)	2.3 Ω at IF = 10 mA, f = 100 MHz - ensures low insertion loss (<0.24 dB) in active RF paths
Charge Carrier Lifetime (τ_rr)	1.55 μs typical - provides stable RF conduction with low harmonic distortion
Reverse Voltage (V_R)	150 V max - supports high-power RF switching without breakdown in cellular/WiFi front ends
Isolation (ISO)	17.3 dB at f = 1 GHz, VR = 0 V - delivers effective T/R path separation in antenna modules
Insertion Loss (IL)	0.24 dB at f = 1 GHz, IF = 10 mA - maintains signal integrity in low-bias RF routing

Pinout & Package

BAR6406E6327HTSA1 is housed in an industry-standard SOT23-3 package (2.9 mm × 2.4 mm × 1.0 mm), RoHS-compliant and halogen-free, qualified for industrial temperature range (−55 °C to +125 °C).

Pin/Terminal	Circuit Role	Design Meaning
Anode 1 (Pin 1)	Common anode terminal for Diode 1	Shared bias node enabling compact dual-diode switching with single forward control
Cathode 1 (Pin 2)	Cathode of Diode 1	RF signal path input/output for first switching arm in T/R or diversity configuration
Cathode 2 (Pin 3)	Cathode of Diode 2	Independent RF path for second switching arm - supports antenna diversity or duplexing

Key Features

Feature	Design Value
Low signal distortion	1.55 μs carrier lifetime minimizes intermodulation in multi-carrier LTE/5G signals
Ultra-low junction capacitance	0.22 pF at 1 GHz/0 V reduces harmonic generation and improves broadband matching
High reverse voltage rating	150 V standoff supports PA output stage switching without external protection
JEDEC-qualified industrial reliability	Validated per JEDEC47/20/22 - ensures stable operation in base station and infrastructure equipment

Applications

Antenna Switching in LTE/5G Handsets

RF Front-End T/R Switching

Use Scenario: Selecting between main and diversity antennas in sub-6 GHz mobile terminals.

IC Role / Device Role / Timing Role: Dual-common-anode PIN diode pair acting as low-loss, low-distortion RF path selector.

Use Value: Achieves <0.24 dB insertion loss and >17 dB isolation at 1–2.5 GHz, preserving receiver sensitivity and transmitter linearity.

Use Scenario: Isolating transmit and receive paths in WiFi 6/6E access point RF modules.

IC Role / Device Role / Timing Role: High-voltage RF switch controlling signal routing between PA and LNA.

Use Value: Withstands 150 V reverse bias while maintaining 2.4 kΩ parallel resistance at 2.5 GHz for robust T/R isolation.

Programmable RF Attenuators

High-Speed Data Interface Protection

Use Scenario: Digitally controlled attenuation in test equipment and vector signal analyzers.

IC Role / Device Role / Timing Role: Bias-tunable resistive element adjusting RF power level via forward current.

Use Value: Forward resistance varies from 10.3 Ω (1 mA) to 1.35 Ω (100 mA) at 100 MHz - enables 10+ dB dynamic range.

Use Scenario: ESD-safe RF coupling in high-speed SerDes interfaces (e.g., PCIe Gen4/5 reference clocks).

IC Role / Device Role / Timing Role: Low-capacitance shunt element protecting sensitive inputs without degrading edge rate.

Use Value: 0.22 pF capacitance minimizes signal rise-time degradation while providing 150 V transient protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SKY13370-374LF	Single diode, 0.18 pF C_j, 1.8 Ω R_F @ 10 mA/100 MHz, QFN-6 package	Lacks dual-common-anode topology; requires external layout for paired switching	Preferred when lowest possible capacitance and board space are critical, but discrete routing adds complexity
BAP64-05W	Single diode, 0.25 pF C_j, 2.5 Ω R_F @ 10 mA/100 MHz, SOT323-3 package	Higher capacitance and no integrated dual configuration - needs two devices for same function	Used where cost-per-diode is prioritized over assembly count and thermal coupling benefits

Compared with SKY13370-374LF and BAP64-05W, BAR6406E6327HTSA1 delivers integrated dual-switch functionality in one SOT23-3 footprint, reducing PCB area by ~40% and improving thermal tracking between diodes - critical for balanced T/R performance in compact RF modules.

Availability

BAR6406E6327HTSA1 is available at Aetrix Electronics and suitable for wireless communication infrastructure, high-speed data networks, and RF front-end design requiring stable component supply across extended production cycles.

Supply support for BAR6406E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BAR6406E6327HTSA1 belongs to Infineon's BAR64 RF PIN diode product line, engineered specifically for low-distortion, high-isolation switching in sub-3 GHz wireless infrastructure and handset front ends.

FAQ

What is the maximum RF frequency supported by BAR6406E6327HTSA1?

The BAR6406E6327HTSA1 is characterized up to 3 GHz, with validated performance including 10.3 dB isolation at 2.5 GHz and stable 0.21 pF capacitance across 1–3 GHz at 0 V reverse bias. Insertion loss remains below 0.98 dB at 10 mA forward current within this band.

How does the common-anode configuration affect circuit design?

The common-anode configuration allows both diodes to share a single forward bias control line, simplifying driver design and reducing component count in T/R switches. It also improves thermal coupling between diodes, enhancing tracking during high-duty-cycle RF operation.

Is BAR6406E6327HTSA1 suitable for DC blocking applications?

No - BAR6406E6327HTSA1 is optimized for RF switching and attenuation, not DC blocking. Its low forward resistance and moderate reverse leakage (20 nA at 20 V) make it unsuitable as a standalone DC blocking element; dedicated high-impedance RF capacitors are recommended for that function.

What thermal derating applies above 25 °C ambient?

At TA > 25 °C, total power dissipation must be linearly derated from 250 mW using the specified thermal resistance (R_thJA = 500 K/W). For example, at 85 °C ambient, max power drops to 125 mW. Junction temperature must remain ≤150 °C under all operating conditions.

BAR6406E6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Diode Type:: PIN - 1 Pair Common Anode

Voltage - Peak Reverse (Max):: 150V

Current - Max:: 100 mA

Capacitance @ Vr, F:: 0.35pF @ 20V, 1MHz

Resistance @ If, F:: 1.35Ohm @ 100mA, 100MHz

Power Dissipation (Max):: 250 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOT23

BAR6406E6327HTSA1 FAQ

1.How can I place an order for BAR6406E6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6406E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6406E6327HTSA1 reliable?

The price and inventory of BAR6406E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6406E6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BAR6406E6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6406E6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR6406E6327HTSA1?

BAR6406E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6406E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6406E6327HTSA1?

For technical support, including BAR6406E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6406E6327HTSA1 requirements.

6.How does Aetrix verify that BAR6406E6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAR6406E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6406E6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAR6406E6327HTSA1?

All BAR6406E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6406E6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6406E6327HTSA1 part is unused and in its original packaging.

Return procedure for BAR6406E6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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