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Infineon Technologies BAR6406WE6327
- Part No.:
- BAR6406WE6327
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAR6406WE6327.pdf
- Description:
- RF PIN DIODE > ANTENNA SWITCH
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
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Product details
Overview
BAR6406WE6327 from Infineon Technologies is a silicon PIN diode optimized for RF attenuator and switch applications in 5G infrastructure, cellular base stations, and microwave front-ends. It delivers 150 V reverse voltage rating, 0.17 pF capacitance at 0 V/1–1.8 GHz, 2.1 Ω forward resistance at 10 mA/100 MHz, and operates up to 6 GHz with low signal distortion.
For engineers reviewing the BAR6406WE6327 datasheet, BAR6406WE6327 pinout, BAR6406WE6327 application, or BAR6406WE6327 equivalent, key selection criteria include RF insertion loss (0.16 dB @ 1.8 GHz/10 mA), isolation (17 dB @ 1.8 GHz), thermal resistance (≤340 K/W), and SOT323 package compatibility with high-frequency PCB layout constraints.
Technical Context
This PIN diode functions as a voltage-controlled RF resistor: its I-region width (50 µm) and carrier lifetime (1550 ns) enable precise linear attenuation control across 1 MHz–6 GHz. Reverse bias sets high-impedance state (RP = 3 kΩ @ 1.8 GHz), while forward bias establishes low-loss conduction path (rf = 0.85 Ω @ 100 mA/100 MHz).
Designed for series-switch configuration in 50 Ω systems, it achieves 22 dB isolation at 0.9 GHz and maintains ≤0.32 dB insertion loss at 1.8 GHz with 3 mA bias - critical for LTE/5G TDD/FDD transmit-receive switching and variable-gain amplifier stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 150 V - supports high-voltage RF switching in macro-cell power amplifiers without breakdown. |
| Capacitance (CT) | 0.17 pF @ 0 V, 1–1.8 GHz - minimizes parasitic loading on RF traces above 1 GHz. |
| Forward Resistance (rf) | 2.1 Ω @ 10 mA, 100 MHz - enables low-loss current-controlled attenuation in bias networks. |
| Isolation (ISO) | 17 dB @ 1.8 GHz, 0 V - ensures sufficient TX/RX channel separation in FDD systems. |
| Insertion Loss (IL) | 0.16 dB @ 1.8 GHz, 10 mA - preserves signal integrity in cascaded RF gain blocks. |
| Thermal Resistance (RthJS) | ≤340 K/W - allows sustained 100 mA operation within 65 °C junction limit under pulsed RF conditions. |
Pinout & Package
BAR6406WE6327 is housed in a leadless SOT323 (SC-70) surface-mount package measuring 2.1 × 1.25 × 0.95 mm, optimized for RF layout with minimal pad inductance and thermal path efficiency.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | RF input / DC bias injection point | Accepts forward current to modulate RF resistance; requires DC-blocking capacitor in shunt-switch topology. |
| Cathode | RF output / ground reference | Provides low-inductance return path; must be connected to solid RF ground plane for isolation performance. |
| Case / Exposed Pad | Thermal sink / RF shield | Not electrically connected; soldered to thermal pad for RthJS ≤340 K/W and EMI suppression. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.17 pF at 0 V/1.8 GHz enables broadband matching in 5G FR1 (600 MHz–3.8 GHz) front-ends. |
| High linearity | IP3 > +40 dBm @ 900/1800 MHz ensures minimal intermodulation distortion in multi-carrier LTE systems. |
| AEC-Q101 qualified | Qualified per AEC-Q101 Rev D - suitable for automotive radar modules requiring robustness to thermal cycling and vibration. |
| Pb-free RoHS compliance | Meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile - compatible with lead-free assembly processes. |
Applications
| 5G Massive MIMO Antenna Tuning | LTE Base Station Transmit/Receive Switch |
|---|---|
Use Scenario: Dynamic impedance matching of antenna elements across 3.3–3.8 GHz band using PIN diode-based tunable matching networks. IC Role / Device Role / Timing Role: Voltage-controlled RF resistor adjusting phase/amplitude response in real time via analog bias current. Use Value: Enables 15% bandwidth extension per element and <0.2 dB EVM degradation under 64-QAM modulation. |
Use Scenario: High-isolation T/R switching between PA output and LNA input in FDD base station transceivers. IC Role / Device Role / Timing Role: Series-connected PIN diode blocking RX path during TX burst with <100 ns switching speed. Use Value: Delivers 22 dB isolation at 0.9 GHz and 17 dB at 1.8 GHz, preventing PA self-excitation and LNA desensitization. |
| Automotive 77 GHz Radar Front-End | Wi-Fi 6E (5.925–7.125 GHz) Beamforming Switch |
Use Scenario: Bias-controlled RF attenuation in IF stage of 77 GHz ADAS radar receivers to handle wide dynamic range signals. IC Role / Device Role / Timing Role: Current-tuned variable resistor setting gain in baseband amplifier chain with <1% nonlinearity. Use Value: Supports >80 dB input dynamic range while maintaining <−110 dBc/Hz phase noise floor at 10 kHz offset. |
Use Scenario: Reconfigurable antenna array switching in Wi-Fi 6E access points supporting OFDMA and MU-MIMO. IC Role / Device Role / Timing Role: Low-capacitance series switch enabling sub-ns transition between beam patterns. Use Value: Achieves <0.25 dB IL variation across 5.9–7.1 GHz, preserving EVM <−35 dB under 1024-QAM. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MACOM MADP-000907-14150T | Higher CT (0.25 pF @ 0 V/1 GHz), lower RthJS (220 K/W), SOT-23 package | Better thermal handling but 40% higher capacitance limits use above 3 GHz | Select when thermal load dominates over frequency range; avoid for 5G FR2 designs. |
| Skyworks SMS7630-061 | Lower VF (0.75 V typ.), higher τrr (2200 ns), SC-79 package | Slower switching (µs vs. ns) but superior linearity for high-power CW applications | Prefer for AM/FM broadcast transmitter AGC loops where speed is secondary to IP3. |
Compared with MADP-000907-14150T and SMS7630-061, BAR6406WE6327 uniquely balances ultra-low capacitance (0.17 pF), sub-1 Ω rf at 100 mA, and AEC-Q101 qualification - making it optimal for space-constrained, high-frequency automotive and 5G infrastructure switches requiring simultaneous broadband performance and reliability validation.
Availability
BAR6406WE6327 is available at Aetrix Electronics and suitable for 5G massive MIMO antenna tuning, LTE base station T/R switching, and automotive 77 GHz radar front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAR6406WE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with leadership in high-reliability discrete and integrated solutions.
BAR6406WE6327 belongs to Infineon's BAR64 family of high-voltage PIN diodes engineered specifically for RF switching and attenuation in wireless infrastructure and automotive radar systems demanding low distortion and high power handling.
FAQ
What is the maximum continuous forward current for BAR6406WE6327?
The absolute maximum forward current is 100 mA at TA = 25 °C. Derating applies above 25 °C ambient: maximum allowable IF decreases linearly to zero at 125 °C case temperature, per the device's thermal resistance of ≤340 K/W and 65 °C maximum junction temperature under DC bias.
Does BAR6406WE6327 require external DC blocking capacitors in RF paths?
Yes - because the anode and cathode terminals carry both RF signal and DC bias simultaneously, a DC blocking capacitor (typically 100 pF NP0) must be placed in series with the RF path to prevent bias leakage into adjacent circuitry, especially in shunt-switch configurations where cathode connects to RF ground.
Can BAR6406WE6327 be used in parallel configuration for higher power handling?
No - BAR6406WE6327 is a single-diode die in SOT323 package with common-anode configuration specified only for series-switch or series-attenuator topologies. Parallel use is not characterized or recommended due to thermal imbalance and mismatched carrier lifetime causing uneven current sharing and premature failure.
Is BAR6406WE6327 compatible with lead-free reflow profiles?
Yes - BAR6406WE6327 meets JEDEC J-STD-020D.1 standard for moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C for 30 seconds. Its Pb-free terminations (SnAgCu) ensure reliable solder joint formation without voiding or dewetting in standard Type 3 solder paste processes.
BAR6406WE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 150V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.35pF @ 20V, 1MHz
- Resistance @ If, F:
- 1.35Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SOT-323
BAR6406WE6327 FAQ
1.How can I place an order for BAR6406WE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR6406WE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR6406WE6327 reliable?
The price and inventory of BAR6406WE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6406WE6327 is usually 5 days.
3.What payment methods are accepted for BAR6406WE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6406WE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR6406WE6327?
BAR6406WE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR6406WE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR6406WE6327?
For technical support, including BAR6406WE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6406WE6327 requirements.
6.How does Aetrix verify that BAR6406WE6327 is sourced from the original manufacturer or authorized distributors?
All BAR6406WE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6406WE6327 meets industry standards.
7.What is the process for return or replacement of BAR6406WE6327?
All BAR6406WE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6406WE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR6406WE6327 part is unused and in its original packaging.
Return procedure for BAR6406WE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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