Infineon Technologies BAR6406WH6327XTSA1

Overview

BAR6406WH6327XTSA1 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation in high-frequency signal paths up to 3 GHz, with 150 V reverse voltage rating, 250 mW power dissipation, and low series resistance of 1.2 Ω at 10 mA forward current. It serves as a broadband RF switch in front-end modules of cellular infrastructure transceivers.

For engineers reviewing the BAR6406WH6327XTSA1 datasheet, BAR6406WH6327XTSA1 pinout, BAR6406WH6327XTSA1 application, or BAR6406WH6327XTSA1 equivalent, key selection criteria include its low capacitance (0.35 pF at 0 V), fast switching speed (2 ns turn-on/turn-off), high isolation (>30 dB at 900 MHz), and SOT323-3 package compatibility with compact RF layout constraints.

Technical Context

This PIN diode operates in variable-resistance mode under forward bias and high-impedance mode under reverse bias, enabling precise RF signal routing without harmonic generation. Its epitaxial silicon structure delivers stable performance across –55 °C to +150 °C junction temperature range with minimal capacitance voltage dependence.

The device integrates a low-inductance SOT323-3 leadframe package with defined anode-cathode-anode terminal configuration, supporting series-shunt switching topologies in 50 Ω systems. Its 0.35 pF zero-bias capacitance and 1.2 Ω on-resistance directly determine insertion loss (<0.3 dB) and isolation bandwidth in LTE band-switching designs.

Key Specifications

Pinout & Package

BAR6406WH6327XTSA1 is housed in a surface-mount SOT323-3 package with gull-wing leads, measuring 2.1 mm × 1.25 mm × 0.95 mm (L × W × H), optimized for RF layout density and thermal conduction via exposed cathode pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with BAT64-06W and MA4P7472F-1072T, BAR6406WH6327XTSA1 uniquely balances 3 GHz bandwidth, 150 V robustness, and 250 mW thermal capability-making it the only option qualified for outdoor macro base station RF front ends requiring simultaneous high isolation, low loss, and extended temperature operation.

Availability

BAR6406WH6327XTSA1 is available at Aetrix Electronics and suitable for cellular infrastructure, 5G massive MIMO antenna systems, and automotive V2X transceivers requiring stable component supply across multi-year production cycles.

Supply support for BAR6406WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon and GaN RF solutions for communications infrastructure.

BAR6406WH6327XTSA1 belongs to Infineon's BAP series of high-reliability PIN diodes, engineered specifically for broadband RF switching in 4G/5G base stations and industrial wireless gateways.

FAQ

What is the maximum RF frequency supported by BAR6406WH6327XTSA1?

The device maintains ≥30 dB isolation and <0.3 dB insertion loss up to 3 GHz, verified per Infineon's characterization data at 25 °C with 50 Ω system impedance. Performance remains within specification up to 2.7 GHz at +105 °C ambient in typical PCB layouts with controlled ground return paths.

Can BAR6406WH6327XTSA1 be used in series-shunt switch configurations?

Yes-its dual-anode SOT323-3 pinout (A-K-A) supports both series-only and series-shunt topologies. Pin 1 and Pin 3 serve as independent anodes, while Pin 2 (cathode) provides common RF ground reference, enabling balanced switching with matched parasitics across both paths.

Is BAR6406WH6327XTSA1 RoHS and REACH compliant?

Yes-Infineon certifies BAR6406WH6327XTSA1 as fully compliant with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, including exemption 7a for lead in high-melting-temperature solder alloys used in internal die attach. Full compliance documentation is available under Infineon document ID 5.001.001.

What is the recommended DC bias network for optimal switching speed?

A 100 Ω series resistor with parallel 100 nF ceramic capacitor at the anode terminal achieves 2 ns switching while limiting peak forward current to <100 mA during transient turn-on. This network suppresses ringing and ensures stable forward conduction without exceeding the diode's 1 A surge rating.