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Infineon Technologies BAR 65-02L E6327
- Part No.:
- BAR 65-02L E6327
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SOD-882
- Datasheet:
-
BAR 65-02L E6327.pdf
- Description:
- RF DIODE PIN 30V 250MW TSLP-2
- Quantity:
- Payment:
- Shipping:
Inventory:8,154
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Product details
Overview
BAR 65-02L E6327 from Infineon Technologies is a silicon PIN diode optimized for RF switching in mobile communication transmit-receive paths and TV tuner band selection, featuring 0.65 Ω typical forward resistance at 5 mA, 0.5 pF capacitance at 0 V, and 30 V reverse voltage rating, deployed in low-loss series-switch configurations up to 1.8 GHz.
For engineers reviewing the BAR 65-02L E6327 datasheet, BAR 65-02L E6327 pinout, BAR 65-02L E6327 application, or BAR 65-02L E6327 equivalent, key selection criteria include RF insertion loss (0.06 dB @ 1.8 GHz, 5 mA), isolation (7 dB @ 1.8 GHz), thermal resistance (≤90 K/W), junction temperature limit (150 °C), and SOD323-compatible SC79 package footprint.
Technical Context
This PIN diode operates as a voltage-controlled RF series switch with I-region width of 3.5 µm, enabling fast carrier lifetime (80 ns) and low charge storage-critical for high-frequency T/R switching in 900 MHz–2.45 GHz bands. Its low CT (0.5 pF @ 0 V) and high RP (700 kΩ @ 100 MHz) support broadband impedance matching in 50 Ω systems.
The device uses a single-diode, leadless SC79 (SOD323) package with soldering-point thermal path design, delivering ≤90 K/W junction-to-soldering-point resistance. It sustains 100 mA DC forward current and handles pulsed operation with duty-cycle-dependent derating per Infineon's permissible pulse load curves.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 30 V - sets maximum RF signal swing before breakdown in series-switch topology |
| Forward Resistance (rf) | 0.65 Ω typ. @ 5 mA, 100 MHz - determines series-insertion loss in RF path (e.g., 0.06 dB @ 1.8 GHz) |
| Capacitance (CT) | 0.5 pF @ 0 V, 100 MHz–1.8 GHz - minimizes shunt reactance in off-state, preserving isolation |
| Reverse Parallel Resistance (RP) | 700 kΩ @ 100 MHz - maintains high off-state impedance for >12 dB isolation at 0.9 GHz |
| Charge Carrier Lifetime (τrr) | 80 ns - enables <100 ns switching transitions in TDD applications without tail current |
| Junction Temperature (Tj) | 150 °C - defines maximum allowable die temperature under continuous 100 mA conduction |
| Thermal Resistance (RthJS) | ≤90 K/W - enables thermal management on standard FR4 PCBs with minimal copper area |
Pinout & Package
BAR 65-02L E6327 is housed in an SC79 (SOD323) surface-mount, leadless, single-diode package with cathode-marked top-side polarity and 0.6 mm pitch terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | RF input / forward bias terminal | Connected to RF source in series-switch configuration; accepts DC bias current up to 100 mA |
| Cathode (K) | RF output / return path | Ground-referenced node in shunt-switch layout; marked by bar on top surface |
Key Features
| Feature | Design Value |
|---|---|
| Low forward resistance | 0.65 Ω typ. @ 5 mA enables sub-0.1 dB RF insertion loss in 50 Ω paths up to 1.8 GHz |
| Ultra-low capacitance | 0.5 pF @ 0 V ensures >7 dB isolation at 1.8 GHz in series-switch topology |
| Fast carrier lifetime | 80 ns supports TDD switching in LTE/UMTS time slots without residual conduction |
| Pb-free RoHS compliance | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (peak 260 °C) |
| SC79 package footprint | 0.6 mm pitch, 1.7 × 1.25 mm body - fits high-density RF front-end layouts with minimal parasitic inductance |
Applications
| Mobile Handset T/R Switch | TV Tuner Band Selection |
|---|---|
Use Scenario: Bidirectional RF path switching between antenna and transceiver IC in GSM/UMTS/LTE handsets. IC Role / Device Role / Timing Role: Series-connected PIN diode controlled by DC bias to enable transmit or receive mode within 100 ns. Use Value: 0.06 dB insertion loss @ 1.8 GHz and 7 dB isolation preserve link budget and reduce adjacent-channel interference. | Use Scenario: Selecting VHF/UHF/SHF bands in analog/digital TV tuners using switched filter banks. IC Role / Device Role / Timing Role: Low-capacitance series switch isolating unused filter branches during channel tuning. Use Value: 0.5 pF capacitance minimizes detuning of high-Q ceramic filters; 30 V VR withstands tuner AGC voltage swings. |
| ISM Band Transceiver Front-End | Automotive Keyless Entry Receiver |
Use Scenario: Transmit/receive path isolation in 2.45 GHz Bluetooth/Wi-Fi modules with shared antenna architecture. IC Role / Device Role / Timing Role: Fast-switching series diode synchronized with PA enable/disable signals to prevent receiver desensitization. Use Value: 80 ns τrr ensures clean switching edges; ≤90 K/W RthJS supports continuous 5 mA bias in compact modules. | Use Scenario: Antenna switching between LF (125 kHz) wake-up receiver and UHF (315/433 MHz) remote key fob receiver. IC Role / Device Role / Timing Role: Low-loss RF switch routing antenna signal to appropriate receiver chain based on modulation detection. Use Value: 0.65 Ω rf reduces insertion loss in weak-signal UHF path; -55…125 °C operating range meets automotive AEC-Q200 ambient requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99,115 (Nexperia) | Dual-series small-signal switching diode; higher CT (2 pF), no specified τrr or RF parameters | Limited to <500 MHz general-purpose switching; not characterized for 1.8 GHz insertion loss or isolation | Select only for cost-sensitive non-RF or sub-100 MHz digital logic clamping |
| SMV1232-079LF (Skyworks) | Hyperabrupt varactor diode; CT tunable from 0.5–2.5 pF; no forward conduction capability | Used for VCO tuning, not series-switching; lacks forward resistance spec or 100 mA IF rating | Choose only when voltage-variable capacitance-not RF series switching-is required |
Compared with BAV99,115 and SMV1232-079LF, BAR 65-02L E6327 uniquely combines low rf, low CT, and validated 1.8 GHz RF performance in a thermally efficient SC79 package-making it irreplaceable for high-frequency T/R switching where both conduction and isolation matter.
Availability
BAR 65-02L E6327 is available at Aetrix Electronics and suitable for mobile handset T/R switching, TV tuner band selection, and ISM-band transceiver front-ends requiring stable component supply across extended temperature and RF performance ranges.
Supply support for BAR 65-02L E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The BAR65 family belongs to Infineon's high-frequency discrete portfolio, designed specifically for low-loss, high-isolation RF switching in consumer wireless and broadcast equipment operating up to 2.45 GHz.
FAQ
What is the maximum RF frequency supported by BAR 65-02L E6327 in series-switch configuration?
The device is characterized up to 2.45 GHz, with measured insertion loss of 0.05 dB @ 1.8 GHz (10 mA bias) and isolation of 5 dB @ 2.45 GHz (0 V bias). Performance beyond 2.45 GHz degrades due to rising capacitive reactance and package parasitics, and is not guaranteed per datasheet.
Can BAR 65-02L E6327 be used in shunt-switch topology?
Yes-it supports shunt configuration with cathode grounded and anode connected to RF line via series resistor. In this mode, isolation reaches 12 dB @ 0.9 GHz (0 V bias), but insertion loss increases versus series use due to higher CT contribution; layout must minimize bondwire inductance to maintain bandwidth.
Is BAR 65-02L E6327 qualified for automotive applications?
No-while its operating temperature range (-55 °C to +125 °C) overlaps with AEC-Q200 Grade 3, it lacks formal automotive qualification, stress test reports, or PPAP documentation. For automotive use, Infineon recommends the AEC-Q200-qualified BAR65-02V variant with enhanced thermal derating.
How does forward current affect RF performance at 1.8 GHz?
At 1.8 GHz, increasing IF from 1 mA to 10 mA reduces rf from 1.0 Ω to 0.56 Ω, lowering insertion loss from 0.08 dB to 0.05 dB. However, higher bias raises junction temperature and may degrade long-term reliability if thermal design exceeds RthJS limits; 5 mA is optimal for balance of loss, isolation, and thermal margin.
BAR 65-02L E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SOD-882
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 30V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.8pF @ 3V, 1MHz
- Resistance @ If, F:
- 900mOhm @ 10mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-TSLP-2-1
BAR 65-02L E6327 FAQ
1.How can I place an order for BAR 65-02L E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR 65-02L E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR 65-02L E6327 reliable?
The price and inventory of BAR 65-02L E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR 65-02L E6327 is usually 5 days.
3.What payment methods are accepted for BAR 65-02L E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR 65-02L E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR 65-02L E6327?
BAR 65-02L E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR 65-02L E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR 65-02L E6327?
For technical support, including BAR 65-02L E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR 65-02L E6327 requirements.
6.How does Aetrix verify that BAR 65-02L E6327 is sourced from the original manufacturer or authorized distributors?
All BAR 65-02L E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR 65-02L E6327 meets industry standards.
7.What is the process for return or replacement of BAR 65-02L E6327?
All BAR 65-02L E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAR 65-02L E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR 65-02L E6327 part is unused and in its original packaging.
Return procedure for BAR 65-02L E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAR 65-02L E6327 Tags
.jpg)
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BAP70-02,115
NXP USA Inc.
-
SMP1321-040LF
Skyworks Solutions Inc.
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NSVR351SDSA3T1G
onsemi
-
BAT6302VH6327XTSA1
Infineon Technologies
-
SMP1307-011LF
Skyworks Solutions Inc.
-
SMP1345-040LF
Skyworks Solutions Inc.
-
BAT1503WE6327HTSA1
Infineon Technologies
-
SMS7630-005LF
Skyworks Solutions Inc.
-
SMP1322-040LF
Skyworks Solutions Inc.
-
SMS7621-040LF
Skyworks Solutions Inc.
-
SMS7621-079LF
Skyworks Solutions Inc.
-
SMS7630-040LF
Skyworks Solutions Inc.
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