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Infineon Technologies BAR 65-02V E6327
- Part No.:
- BAR 65-02V E6327
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
BAR 65-02V E6327.pdf
- Description:
- RF DIODE PIN 30V 250MW SC79-2
- Quantity:
- Payment:
- Shipping:
Inventory:9,003
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Product details
Overview
BAR 65-02V E6327 from Infineon Technologies is a silicon PIN diode optimized for RF switching in mobile communication front-end modules, functioning as a low-loss series switch in transmit-receive paths and TV tuner band selection circuits. It delivers 0.65 Ω typical forward resistance at 5 mA, 0.5 pF typical capacitance at 0 V, and supports operation up to 2.45 GHz with ≤0.06 dB insertion loss at 1.8 GHz and 5 mA bias.
For engineers reviewing the BAR 65-02V E6327 datasheet, BAR 65-02V E6327 pinout, BAR 65-02V E6327 application, or BAR 65-02V E6327 equivalent, key selection criteria include RF insertion loss at 1.8 GHz, reverse isolation at 0 V bias, forward resistance vs. current profile, and thermal resistance (RthJS ≤ 130 K/W) for compact RF layout integration.
Technical Context
This PIN diode operates in series-switch configuration within 50 Ω RF signal paths, where low forward resistance minimizes conduction loss and low junction capacitance ensures high off-state isolation across UHF to 2.45 GHz bands. Its I-region width of 3.5 µm balances charge carrier lifetime (τrr = 80 ns typ.) and switching speed for TDD-based mobile transceivers.
The SC79 (SOD323) package enables surface-mount integration into space-constrained RF front-ends, with thermal resistance RthJS ≤ 130 K/W enabling stable operation at junction temperatures up to 150 °C under 100 mA DC forward current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Forward resistance | 0.65 Ω typ. @ 5 mA, 100 MHz - enables <0.06 dB insertion loss in 50 Ω series switch at 1.8 GHz |
| Capacitance | 0.5 pF typ. @ 0 V, 100 MHz - provides >7 dB isolation at 1.8 GHz in off-state |
| Reverse voltage | 30 V max - supports bias sequencing in multi-band antenna tuning circuits |
| Forward current | 100 mA max - sustains continuous RF power handling in mobile PA output switches |
| Junction temp | 150 °C max - allows operation in thermally dense RF modules without derating below 118 °C case temp |
| Charge carrier life | 80 ns typ. - ensures sub-100 ns switching for LTE/TD-SCDMA time-division duplexing |
| Thermal resistance | ≤130 K/W (J–solder) - defines PCB copper area requirement for thermal relief in 2.5 × 1.3 mm footprint |
Pinout & Package
BAR 65-02V E6327 uses the SC79 (SOD323) leadless surface-mount package: 2.5 mm × 1.3 mm × 0.9 mm body, single-diode configuration, cathode marked by blue dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | RF input / forward bias entry | Connected to RF source side in series switch; requires low-inductance trace routing |
| Cathode | RF output / ground return path | Marked with blue dot; ties to RF load or ground plane with minimal via inductance |
Key Features
| Feature | Design Value |
|---|---|
| Low forward resistance | 0.65 Ω typ. @ 5 mA enables <0.06 dB RF insertion loss at 1.8 GHz in 50 Ω systems |
| Ultra-low capacitance | 0.5 pF @ 0 V ensures >7 dB isolation at 1.8 GHz for clean T/R channel separation |
| Fast switching | 80 ns carrier lifetime supports LTE frame timing with <100 ns turn-on/turn-off |
| RoHS-compliant packaging | Pb-free SC79 (SOD323) meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 |
| High junction temperature | 150 °C rating allows placement near power amplifiers without thermal throttling |
Applications
| Mobile Handset T/R Switching | TV Tuner Band Selection |
|---|---|
Use Scenario: Bidirectional RF path switching between cellular transceiver and shared antenna in 4G/LTE handsets. IC Role / Device Role / Timing Role: Series-connected PIN diode controlled by DC bias to route TX or RX signals through common antenna port. Use Value: 0.06 dB insertion loss at 1.8 GHz and 5 mA bias preserves EVM and ACLR performance in 20 MHz LTE channels. | Use Scenario: Selecting VHF/UHF/SHF bands in digital terrestrial TV tuners with analog front-end filtering. IC Role / Device Role / Timing Role: Low-capacitance shunt or series switch enabling broadband filter bank reconfiguration. Use Value: 0.5 pF capacitance and 700 kΩ parallel resistance at 100 MHz maintain filter Q-factor and image rejection above 60 dB. |
| ISM Band Transceiver Modules | Wi-Fi 2.4 GHz Front-End Switches |
Use Scenario: Half-duplex switching in 915 MHz or 2.4 GHz ISM-band IoT transceivers with integrated PA/LNA. IC Role / Device Role / Timing Role: Single-pole single-throw (SPST) series switch isolating PA output during RX mode. Use Value: 80 ns τrr ensures <100 ns transition between TX and RX states, meeting IEEE 802.15.4g timing margins. | Use Scenario: Antenna diversity switching between main and auxiliary Wi-Fi 2.4 GHz paths in smartphones and routers. IC Role / Device Role / Timing Role: Low-loss series element in SPDT configuration with external control logic. Use Value: 0.65 Ω forward resistance reduces path loss by ≥0.15 dB versus higher-Rf alternatives, improving link budget by 1.2 dB at edge-of-cell. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT62-02W E6327 | Higher capacitance (0.7 pF @ 0 V), lower Rf (0.45 Ω @ 5 mA), same SC79 package | Better for ultra-low-loss paths below 1 GHz; reduced isolation above 1.5 GHz limits 2.4 GHz Wi-Fi use | Select when prioritizing insertion loss over off-state isolation in sub-1 GHz ISM designs |
| SMV1232-011 | 0.35 pF @ 0 V, 1.1 Ω Rf @ 5 mA, SOT-23 package, higher VR (50 V) | Superior isolation at 2.4 GHz but higher conduction loss; larger footprint impacts miniaturized layouts | Choose for high-isolation 2.4 GHz Wi-Fi front-ends where board space permits SOT-23 |
Compared with BAT62-02W and SMV1232-011, BAR 65-02V E6327 offers optimal balance of 0.65 Ω Rf and 0.5 pF CT for 1.8–2.45 GHz mobile switching, fitting SC79 constraints while maintaining >7 dB isolation and <0.06 dB loss at nominal bias.
Availability
BAR 65-02V E6327 is available at Aetrix Electronics and suitable for mobile handset T/R switching, TV tuner band selection, and ISM-band transceiver modules requiring stable component supply across extended production lifecycles.
Supply support for BAR 65-02V E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon RF components for wireless infrastructure and consumer devices.
BAR 65-02V E6327 belongs to Infineon's high-frequency PIN diode product line, engineered specifically for low-loss, fast-switching RF front-end applications in mobile communications and broadcast tuners.
FAQ
What is the maximum RF frequency supported by BAR 65-02V E6327?
BAR 65-02V E6327 is characterized up to 2.45 GHz, with measured isolation of 5 dB at that frequency under 0 V bias and insertion loss of 0.05 dB at 1.8 GHz with 10 mA forward current. Its 3.5 µm I-region and 80 ns carrier lifetime support reliable operation in 2.4 GHz ISM and Wi-Fi 2.4 bands.
Does BAR 65-02V E6327 require a series current-limiting resistor in bias networks?
No external current-limiting resistor is required for standard 5 mA bias operation, as the diode's forward voltage is 0.93 V typ. at 100 mA and its thermal resistance (≤130 K/W) allows direct DC coupling from 1.8–3.3 V logic-level drivers. For pulsed operation beyond 100 mA, transient current limiting remains necessary per pulse-width curves.
How does BAR 65-02V E6327 perform in shunt-switch configuration?
In shunt configuration, BAR 65-02V E6327 achieves 12 dB isolation at 0.9 GHz and 7 dB at 1.8 GHz with 0 V bias, limited by its 0.5 pF capacitance. Its 700 kΩ parallel resistance at 100 MHz supports high off-state impedance, but shunt use requires careful matching network design to avoid resonance-induced passband ripple.
Is BAR 65-02V E6327 compatible with lead-free reflow profiles?
Yes - BAR 65-02V E6327 is RoHS-compliant and qualified for standard lead-free reflow per JEDEC J-STD-020, with peak temperature tolerance up to 260 °C. Its SC79 package passes MSL Level 1 testing, allowing unlimited floor life and compatibility with standard SMT assembly lines.
BAR 65-02V E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-79, SOD-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 30V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.8pF @ 3V, 1MHz
- Resistance @ If, F:
- 900mOhm @ 10mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SC79-2
BAR 65-02V E6327 FAQ
1.How can I place an order for BAR 65-02V E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR 65-02V E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR 65-02V E6327 reliable?
The price and inventory of BAR 65-02V E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR 65-02V E6327 is usually 5 days.
3.What payment methods are accepted for BAR 65-02V E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR 65-02V E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR 65-02V E6327?
BAR 65-02V E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR 65-02V E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR 65-02V E6327?
For technical support, including BAR 65-02V E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR 65-02V E6327 requirements.
6.How does Aetrix verify that BAR 65-02V E6327 is sourced from the original manufacturer or authorized distributors?
All BAR 65-02V E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR 65-02V E6327 meets industry standards.
7.What is the process for return or replacement of BAR 65-02V E6327?
All BAR 65-02V E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAR 65-02V E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR 65-02V E6327 part is unused and in its original packaging.
Return procedure for BAR 65-02V E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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