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Infineon Technologies BAR6502VH6327XTSA1
- Part No.:
- BAR6502VH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
BAR6502VH6327XTSA1.pdf
- Description:
- RF DIODE PIN 30V 250MW SC79-2
- Quantity:
- Payment:
- Shipping:
Inventory:15,519
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Product details
Overview
BAR6502VH6327XTSA1 from Infineon Technologies is a silicon PIN diode in SC79 (SOD-323) package, configured as a single discrete series switch for RF transmit-receive paths. It delivers 0.65 Ω typical forward resistance at 5 mA, 0.5 pF typical capacitance at 0 V, and supports 1.8 GHz operation with 0.06 dB insertion loss at 5 mA - enabling low-loss antenna switching in mobile handsets.
For engineers reviewing the BAR6502VH6327XTSA1 datasheet, BAR6502VH6327XTSA1 pinout, BAR6502VH6327XTSA1 application, or BAR6502VH6327XTSA1 equivalent, key selection criteria include RF isolation at 1.8 GHz, forward resistance vs. bias current dependency, thermal resistance (RthJS ≤ 130 K/W), and SOD-323 footprint compatibility in space-constrained front-end modules.
Technical Context
This PIN diode operates as a voltage-controlled RF series switch: forward bias reduces series impedance (<0.95 Ω at 10 mA/100 MHz), while reverse bias maximizes isolation (>7 dB at 1.8 GHz). Its 3.5 µm I-region width and low CT (0.4–0.5 pF) enable fast carrier lifetime (80 ns typ.) and minimal signal distortion in GHz-band T/R switching.
Designed for DC–2.45 GHz operation, it maintains stable RF performance across -55 °C to +125 °C ambient, with junction temperature limited to 150 °C and thermal resistance RthJS ≤ 130 K/W to soldering point - critical for continuous-wave power handling in compact mobile PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Forward Resistance | 0.65 Ω @ 5 mA, 100 MHz - enables <0.06 dB insertion loss in 50 Ω series-switch paths at 1.8 GHz |
| Diode Capacitance | 0.5 pF @ 0 V, 100 MHz–1.8 GHz - minimizes shunt loading and frequency detuning in tuner/mixer interfaces |
| Reverse Isolation | 7 dB @ 1.8 GHz, VR = 0 V - provides baseline RF blocking when diode is reverse-biased in T/R switch topology |
| Max Forward Current | 100 mA DC - supports pulsed RF power handling up to 250 mW with derating above 118 °C case temperature |
| Junction Temperature | 150 °C - defines absolute thermal limit for reliability under sustained RF drive in handheld device envelopes |
| Thermal Resistance | RthJS ≤ 130 K/W - determines allowable power dissipation margin between junction and PCB solder joint in SOD-323 layout |
Pinout & Package
SC79 (SOD-323) surface-mount package: 2-terminal leadless plastic case, 1.7 mm × 1.25 mm × 0.95 mm body, gull-wing leads, RoHS-compliant matte tin finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | RF input / forward bias entry | Connects to antenna or PA output; polarity must be observed to avoid reverse conduction in series configuration |
| Cathode (K) | RF output / return path | Routes switched RF to transceiver or LNA; forms low-impedance path when forward biased at ≥1 mA |
Key Features
| Feature | Design Value |
|---|---|
| Low forward resistance | 0.65 Ω @ 5 mA enables sub-0.1 dB RF insertion loss in mobile band-switching applications |
| Ultra-low capacitance | 0.5 pF @ 0 V ensures minimal harmonic generation and impedance mismatch in 50 Ω front-end designs |
| Fast switching speed | 80 ns charge carrier lifetime supports >10 MHz modulation envelope switching in LTE/WCDMA TDD modes |
| High isolation at GHz frequencies | 12 dB @ 0.9 GHz and 7 dB @ 1.8 GHz allows effective Tx/Rx channel separation without external filtering |
Applications
| Mobile Handset Antenna Switching | TV Tuner Band Selection |
|---|---|
Use Scenario: Dynamic switching between cellular bands (B1/B3/B7/B20) and Wi-Fi/Bluetooth antennas in dual-SIM smartphones. IC Role / Device Role / Timing Role: Series-connected PIN diode acting as low-loss RF gate controlled by baseband GPIO. Use Value: 0.06 dB insertion loss at 1.8 GHz preserves PA efficiency and receiver sensitivity during real-time band reconfiguration. | Use Scenario: Selecting VHF/UHF/L-band inputs in digital terrestrial TV tuners with integrated demodulators. IC Role / Device Role / Timing Role: Voltage-controlled RF switch isolating unused tuner sections to reduce noise figure degradation. Use Value: 12 dB isolation at 0.9 GHz prevents intermodulation distortion from adjacent channel leakage in multi-standard receivers. |
| ISM Band Transceiver Front-End | Automotive Keyless Entry Receiver |
Use Scenario: Transmit/receive path selection in 2.45 GHz Bluetooth LE or Zigbee modules operating in shared antenna architectures. IC Role / Device Role / Timing Role: Single-pole series switch enabling half-duplex operation with <100 ns transition time. Use Value: 0.5 pF capacitance avoids resonant peaks near 2.4 GHz, maintaining flat group delay across the ISM band. | Use Scenario: RF front-end protection and antenna path routing in 315/433 MHz remote keyless entry (RKE) receivers. IC Role / Device Role / Timing Role: Low-capacitance series element limiting ESD-induced transient coupling into LNA input stage. Use Value: 20 nA max reverse leakage at 20 V ensures stable DC bias integrity during vehicle battery voltage fluctuations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAR6402VH6327XTSA1 | Higher CT (0.7 pF @ 0 V), higher rf (0.9 Ω @ 5 mA), same SOD-323 package | Lower isolation (5 dB @ 1.8 GHz) and higher insertion loss (0.12 dB) limit use to sub-1 GHz systems | Select only if cost sensitivity outweighs 1.8 GHz performance requirements |
| SMV1232-079LF | 0.35 pF @ 0 V, 0.45 Ω @ 5 mA, SOT-23 package - requires different PCB footprint and layout | Superior 2.45 GHz isolation (15 dB) but lacks automotive qualification and extended temp range | Choose for Wi-Fi 6/Bluetooth 5.0 modules where size and GHz performance dominate footprint constraints |
Compared with BAR6502VH6327XTSA1, BAR6402VH6327XTSA1 trades RF performance for cost in sub-GHz applications, while SMV1232-079LF offers better high-frequency metrics at the expense of package compatibility and industrial temperature support.
Availability
BAR6502VH6327XTSA1 is available at Aetrix Electronics and suitable for mobile handset antenna switching, TV tuner band selection, and ISM band transceiver front-ends requiring stable component supply across production lifecycles.
Supply support for BAR6502VH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.
The BAR65 family targets RF front-end switching in consumer wireless devices, emphasizing low-loss, high-isolation, and thermally robust PIN diodes optimized for SOD-323 integration in space-constrained PCBs.
FAQ
What is the maximum RF frequency supported by BAR6502VH6327XTSA1?
The BAR6502VH6327XTSA1 is characterized up to 2.45 GHz, with verified performance data including 5 dB isolation at that frequency and 0.05 dB insertion loss at 10 mA bias. Its 3.5 µm I-region width and low capacitance sustain usable RF switching behavior through the entire ISM and cellular LTE bands without resonance artifacts.
Can BAR6502VH6327XTSA1 replace BAR6402VH6327XTSA1 in existing designs?
No direct replacement: BAR6502VH6327XTSA1 has lower forward resistance (0.65 Ω vs. 0.9 Ω) and capacitance (0.5 pF vs. 0.7 pF), improving 1.8 GHz insertion loss by ~0.06 dB. Layout changes may be needed due to tighter thermal limits (118 °C vs. 125 °C case temp), and bias network tuning is recommended to optimize switching speed.
What is the minimum forward current required for reliable RF switching at 1.8 GHz?
A minimum of 1 mA forward current is sufficient to achieve <0.1 dB insertion loss at 1.8 GHz, per measured S21 data. However, 5 mA is recommended for production designs to ensure margin against process variation, temperature drift, and long-term parameter shift - delivering consistent 0.06 dB loss and >7 dB isolation.
Does BAR6502VH6327XTSA1 meet automotive AEC-Q200 requirements?
No - BAR6502VH6327XTSA1 is qualified for industrial temperature range (-55 °C to +125 °C) and RoHS compliance, but it is not AEC-Q200 stress-tested or certified for automotive use. For automotive keyless entry or infotainment RF modules, Infineon's BAT54A or BAV99 families offer AEC-Q200 variants with comparable switching function.
BAR6502VH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-79, SOD-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 30V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.8pF @ 3V, 1MHz
- Resistance @ If, F:
- 900mOhm @ 10mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SC79-2
BAR6502VH6327XTSA1 FAQ
1.How can I place an order for BAR6502VH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR6502VH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR6502VH6327XTSA1 reliable?
The price and inventory of BAR6502VH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6502VH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BAR6502VH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6502VH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR6502VH6327XTSA1?
BAR6502VH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR6502VH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR6502VH6327XTSA1?
For technical support, including BAR6502VH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6502VH6327XTSA1 requirements.
6.How does Aetrix verify that BAR6502VH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BAR6502VH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6502VH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BAR6502VH6327XTSA1?
All BAR6502VH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6502VH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR6502VH6327XTSA1 part is unused and in its original packaging.
Return procedure for BAR6502VH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAR6502VH6327XTSA1 Tags
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