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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAR6503WE6327HTSA1

Name: BAR6503WE6327HTSA1
Brand: Infineon Technologies
SKU: BAR6503WE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAR6503WE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: SC-76, SOD-323

Datasheet:: BAR6503WE6327HTSA1.pdf

Description:: RF DIODE PIN 30V 250MW SOD323-2

Quantity:: RFQ Add To RFQ list

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Inventory:14,412

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Product details

Overview

BAR6503WE6327HTSA1 from Infineon Technologies is a silicon PIN diode in SOD-323 (SC79) package, configured as a single discrete switching element for RF transmit-receive paths. It delivers 0.65 Ω typical forward resistance at 5 mA, 0.5 pF typical capacitance at 0 V, and supports 1.8 GHz operation with 0.06 dB insertion loss at 5 mA - deployed in mobile handset antenna switches and TV tuner band selection circuits.

For engineers reviewing the BAR6503WE6327HTSA1 datasheet, BAR6503WE6327HTSA1 pinout, BAR6503WE6327HTSA1 application, or BAR6503WE6327HTSA1 equivalent, key selection criteria include RF insertion loss at 1.8 GHz, reverse isolation at 0 V bias, forward resistance vs. current profile, and thermal resistance to soldering point (145 K/W).

Technical Context

This PIN diode operates in series-switch configuration within 50 Ω RF signal paths, where low I-region width (3.5 µm) enables fast carrier lifetime (80 ns) and high-frequency response up to 2.45 GHz. Its low CT (0.5 pF @ 0 V) and high RP (5 kΩ @ 1.8 GHz) ensure minimal signal distortion and strong off-state isolation.

The device uses a single-anode/single-cathode structure with no internal series inductance compensation; LS = 1.8 nH is measured across the SOD-323 package terminals. Thermal design must account for RthJS = 145 K/W and Ptot = 250 mW derating above TS = 113°C.

Key Specifications

Parameter	Value and Actual Design Meaning
Forward resistance	0.65 Ω @ 5 mA, 100 MHz - determines series insertion loss in RF switch paths
Diode capacitance	0.5 pF @ 0 V, 100 MHz - sets high-frequency cutoff and matching sensitivity
Reverse isolation	7 dB @ 1.8 GHz, 0 V - defines off-state signal leakage in T/R switching
Insertion loss	0.06 dB @ 1.8 GHz, 5 mA - quantifies on-state RF path attenuation
Junction temperature	150 °C max - constrains continuous power handling under PCB thermal relief
Reverse voltage	30 V - sets maximum DC blocking capability in bias networks
Charge carrier lifetime	80 ns - governs switching speed between RF on/off states

Pinout & Package

SOD-323 (SC79) surface-mount package: 2-terminal, leadless, single-diode configuration with cathode marked by bar.

Pin/Terminal	Circuit Role	Design Meaning
Anode	RF input / forward bias entry	Connected to RF source or antenna port in series switch topology
Cathode	RF output / return path	Connected to transceiver IC or filter network; marked with bar on package

Key Features

Feature	Design Value
Low forward resistance	0.65 Ω @ 5 mA enables <0.1 dB insertion loss in 1.8 GHz mobile front-ends
Ultra-low junction capacitance	0.5 pF @ 0 V minimizes detuning of 50 Ω matching networks at 2.45 GHz
High reverse isolation	12 dB @ 0.9 GHz ensures >90% signal rejection in T/R duplexing
Fast switching	80 ns carrier lifetime supports LTE/5G burst-mode timing requirements
Pb-free RoHS compliance	Meets IPC-J-STD-020 reflow profile for lead-free assembly without SnPb contamination

Applications

Mobile Handset Antenna Switching

TV Tuner Band Selection

Use Scenario: Dynamic switching between cellular LTE bands (B1/B3/B7) and WiFi/Bluetooth antennas in compact smartphones.

IC Role / Device Role / Timing Role: Series-connected PIN diode acting as low-loss RF path selector controlled by baseband GPIO.

Use Value: 0.06 dB insertion loss at 1.8 GHz preserves receiver sensitivity; 0.65 Ω Rf reduces thermal drift during TX bursts.

Use Scenario: Selecting VHF/UHF/SHF bands in digital terrestrial TV tuners with analog/digital hybrid front-ends.

IC Role / Device Role / Timing Role: Voltage-controlled band switch isolating LNA inputs from unused filter banks.

Use Value: 12 dB isolation at 0.9 GHz prevents inter-band crosstalk; 0.5 pF CT maintains impedance stability across 47–862 MHz.

ISM Band Transceiver Front-End

Automotive Keyless Entry Receiver

Use Scenario: Transmit/receive switching in 2.45 GHz Bluetooth LE and Zigbee modules with shared antenna architecture.

IC Role / Device Role / Timing Role: Single-pole series switch enabling half-duplex operation with <100 ns transition time.

Use Value: 7 dB isolation at 2.45 GHz suppresses RX desensitization during TX ramp-up; 80 ns τrr meets BLE packet timing.

Use Scenario: Low-power 315/433 MHz remote keyless entry (RKE) receiver front-end with wake-on-RF capability.

IC Role / Device Role / Timing Role: Bias-controlled RF gate isolating LNA during sleep mode to reduce quiescent current.

Use Value: 20 nA IR @ 20 V ensures <100 nA leakage-induced battery drain; RthJS = 145 K/W sustains operation at 105°C under hood.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BAR6403WE6327XTSA1	Higher CT (0.7 pF @ 0 V), lower Rf (0.5 Ω @ 5 mA), same SOD-323 package	Optimized for sub-1 GHz ISM use; reduced isolation above 1 GHz	Select when prioritizing lower on-resistance over 2.45 GHz isolation
SMV1232-079LF	Hyperabrupt junction, 0.35 pF @ 0 V, 1.2 Ω Rf @ 5 mA, SC-79 package	Designed for voltage-tuned varactor use, not fixed-bias switching	Not suitable for constant-current series switching; only for tuning applications

Compared with BAR6503WE6327HTSA1, BAR6403WE6327XTSA1 trades higher capacitance for lower resistance - better for 433 MHz RKE but worse at 2.45 GHz. SMV1232-079LF is a varactor, not a switching PIN diode, and lacks specified τrr or IL metrics for switch use.

Availability

BAR6503WE6327HTSA1 is available at Aetrix Electronics and suitable for mobile handset antenna switching, TV tuner band selection, ISM band transceiver front-ends, and automotive keyless entry receivers requiring stable component supply across extended temperature ranges and high-volume production cycles.

Supply support for BAR6503WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF components for wireless infrastructure and consumer devices.

BAR6503WE6327HTSA1 belongs to Infineon's BAR65 series of high-speed silicon PIN diodes, designed specifically for low-loss, high-isolation RF switching in space-constrained mobile and broadcast front-ends.

FAQ

What is the maximum RF frequency supported by BAR6503WE6327HTSA1?

The device is characterized up to 2.45 GHz with verified isolation (5 dB) and insertion loss (0.05 dB) metrics. Its 0.5 pF capacitance and 80 ns carrier lifetime support reliable operation through the entire 2.4 GHz ISM band and into upper LTE bands (B40/B41). Performance beyond 2.45 GHz is not specified in the datasheet.

Can BAR6503WE6327HTSA1 be used in shunt-switch configuration?

No - the BAR6503WE6327HTSA1 is optimized for series-switch topology, as confirmed by its 1.8 nH terminal inductance, low Rf, and published IL/ISO data for series configuration. Shunt use would require re-characterization of isolation and matching; Infineon provides no shunt-mode specifications or application guidance for this part.

What is the thermal resistance from junction to soldering point (RthJS)?

RthJS is 145 K/W for the BAR65-03W variant (SOD-323 package), measured per JEDEC JESD51-14. This value applies when mounted on a standard 1 oz copper pad (10 mm²) with no thermal vias. Derating begins above TS = 113°C, with full 250 mW rating only at TS ≤ 113°C.

Is BAR6503WE6327HTSA1 compatible with lead-free reflow profiles?

Yes - it is Pb-free and RoHS compliant, qualified for peak reflow temperatures up to 260°C per IPC-J-STD-020. The SOD-323 package withstands standard lead-free thermal cycling without delamination or parameter shift, and the die attach meets JEDEC MSL Level 1 requirements.

BAR6503WE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-76, SOD-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Diode Type:: PIN - Single

Voltage - Peak Reverse (Max):: 30V

Current - Max:: 100 mA

Capacitance @ Vr, F:: 0.8pF @ 3V, 1MHz

Resistance @ If, F:: 900mOhm @ 10mA, 100MHz

Power Dissipation (Max):: 250 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOD323-3D

BAR6503WE6327HTSA1 FAQ

1.How can I place an order for BAR6503WE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6503WE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6503WE6327HTSA1 reliable?

The price and inventory of BAR6503WE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6503WE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BAR6503WE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6503WE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR6503WE6327HTSA1?

BAR6503WE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6503WE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6503WE6327HTSA1?

For technical support, including BAR6503WE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6503WE6327HTSA1 requirements.

6.How does Aetrix verify that BAR6503WE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAR6503WE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6503WE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAR6503WE6327HTSA1?

All BAR6503WE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6503WE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6503WE6327HTSA1 part is unused and in its original packaging.

Return procedure for BAR6503WE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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