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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAR66E6433HTMA1

Name: BAR66E6433HTMA1
Brand: Infineon Technologies
SKU: BAR66E6433HTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAR66E6433HTMA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BAR66E6433HTMA1.pdf

Description:: RF DIODE PIN 150V 250MW SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,855

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Product details

Overview

BAR66E6433HTMA1 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation in high-frequency signal paths up to 3 GHz, with a maximum reverse voltage of 150 V, forward current rating of 100 mA, and low series resistance of 1.2 Ω at 10 mA. It serves as a high-isolation RF switch in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR66E6433HTMA1 datasheet, BAR66E6433HTMA1 pinout, BAR66E6433HTMA1 application, or BAR66E6433HTMA1 equivalent, key selection criteria include its 150 V breakdown voltage, 250 mW power dissipation limit, low capacitance of 0.35 pF at 0 V, and SOT23-3 package compatibility with automated RF board assembly.

Technical Context

This PIN diode operates in variable-resistance mode under forward bias and high-impedance mode under reverse bias, enabling precise RF signal routing. Its intrinsic layer provides low charge storage and fast carrier lifetime (≤1 ns), supporting switching speeds suitable for LTE and 5G TDD envelope tracking.

The device exhibits a typical junction capacitance of 0.35 pF at 0 V and 0.25 pF at 28 V, with series resistance of 1.2 Ω at 10 mA - critical for minimizing insertion loss in 50 Ω RF systems.

Key Specifications

Parameter	Value and Actual Design Meaning
Max Reverse Voltage	150 V - supports high-voltage RF switching in cellular power amplifier output stages
Power Dissipation	250 mW - defines thermal limit for continuous-wave RF handling in compact SOT23-3 layout
Junction Capacitance	0.35 pF @ 0 V - enables minimal capacitive loading on 2–3 GHz antenna matching networks
Series Resistance	1.2 Ω @ 10 mA - ensures ≤0.1 dB insertion loss in 50 Ω transmission lines
Forward Current	100 mA - sets maximum DC bias current for stable RF conduction without thermal runaway
Carrier Lifetime	≤1 ns - guarantees sub-10 ns switching transitions for time-division duplex (TDD) systems

Pinout & Package

BAR66E6433HTMA1 is housed in a standard SOT23-3 plastic surface-mount package with gull-wing leads, rated for reflow soldering per JEDEC J-STD-020. Pin 1 is anode, Pin 2 is cathode, and Pin 3 is connected internally to the cathode (common-cathode configuration).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Anode)	Forward-bias input terminal	DC control path for forward conduction; must be driven positive relative to cathode
Pin 2 (Cathode)	Common RF return and DC reference	Connected to RF ground plane; carries both RF signal return and bias current return
Pin 3 (Cathode)	Redundant cathode connection	Provides mechanical stability and lower inductance cathode path; electrically tied to Pin 2

Key Features

Feature	Design Value
High-Voltage RF Switching	150 V reverse breakdown enables use in PA output switching without external voltage clamping
Low Capacitance Variation	Capacitance change <15% from 0–28 V allows stable impedance matching across bias range
Fast Switching Speed	≤10 ns turn-on/turn-off supports LTE Category 20 and 5G NR FR1 TDD frame timing
SOT23-3 Footprint Compatibility	Matches industry-standard 2.9 × 1.3 × 1.0 mm outline for drop-in replacement in existing RF layouts

Applications

Cellular Front-End Module

Antenna Tuning System

Use Scenario: RF path selection between multiple antennas in multi-band LTE smartphones.

IC Role / Device Role / Timing Role: High-isolation RF switch controlling signal routing between transceiver and primary/secondary antennas.

Use Value: 45 dB isolation at 2.6 GHz minimizes cross-talk between bands during simultaneous reception.

Use Scenario: Dynamic impedance matching of main antenna across 600 MHz–2.7 GHz frequency bands.

IC Role / Device Role / Timing Role: Variable capacitor element controlled by DC bias to adjust antenna resonance point.

Use Value: 0.35 → 0.25 pF capacitance swing enables 15% bandwidth extension without mechanical actuators.

Wi-Fi 6/6E Front-End

IoT LPWA Transceiver

Use Scenario: Transmit/receive switching in dual-band 2.4/5 GHz Wi-Fi 6E access point RF modules.

IC Role / Device Role / Timing Role: Low-loss SPDT switch isolating PA output from LNA input during T/R transition.

Use Value: 1.2 Ω series resistance contributes <0.08 dB insertion loss, preserving EVM performance at 1024-QAM.

Use Scenario: Antenna diversity switching in NB-IoT and LTE-M trackers operating at 850/900 MHz.

IC Role / Device Role / Timing Role: Low-power RF path selector activated by microcontroller GPIO during sleep/wake cycles.

Use Value: 100 mA forward current rating supports reliable switching with <10 µA standby leakage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MACOM MADP-000907-14150T	Higher 200 V breakdown; 0.22 pF C_j @ 0 V; SOT23-3 compatible but tighter tolerance on R_s	Better suited for base station driver stage switching where higher voltage margin is required	Select when >150 V reverse stress or <0.3 pF capacitance is mandatory
NXP BGX2012A	Lower 100 V breakdown; 0.45 pF C_j @ 0 V; same SOT23-3 footprint and pinout	Optimized for cost-sensitive consumer IoT, not recommended for PA output switching	Choose only for receive-path-only switching below 1 GHz with relaxed voltage requirements

Compared with MADP-000907-14150T and BGX2012A, BAR66E6433HTMA1 delivers balanced 150 V robustness and 0.35 pF capacitance - making it optimal for mid-tier smartphone front-end modules where voltage margin and RF loss must both be tightly controlled.

Availability

BAR66E6433HTMA1 is available at Aetrix Electronics and suitable for cellular front-end design, Wi-Fi 6E module development, and LPWA tracker production requiring stable component supply and consistent RF performance across manufacturing lots.

Supply support for BAR66E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global wafer fabrication and packaging capabilities.

BAR66E6433HTMA1 belongs to Infineon's RF PIN Diode product line, engineered specifically for high-isolation, low-capacitance switching in 4G/5G mobile and wireless infrastructure signal chains.

FAQ

What is the maximum RF frequency supported by BAR66E6433HTMA1?

BAR66E6433HTMA1 maintains usable RF switching performance up to 3 GHz, verified by S-parameter measurements in the official Infineon datasheet. At 2.6 GHz, it achieves 45 dB isolation and 0.08 dB insertion loss under 10 mA forward bias - meeting requirements for LTE Band 7 and 5G n41 operation.

Can BAR66E6433HTMA1 be used in series-shunt RF switch configurations?

Yes - its common-cathode SOT23-3 pinout (Pins 2 and 3 both cathode) supports direct implementation in series-shunt topologies. The matched cathode terminals reduce parasitic inductance, enabling >40 dB isolation at 2.4 GHz when paired with a shunt diode in standard PCB layouts.

Is BAR66E6433HTMA1 compliant with lead-free reflow standards?

Yes - BAR66E6433HTMA1 is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature tolerance up to 260 °C for 30 seconds. The device uses matte tin plating on gull-wing leads and meets IPC/JEDEC standard wetting balance requirements.

Does BAR66E6433HTMA1 require external DC blocking capacitors in RF paths?

No - the device has no internal DC path between RF ports when reverse-biased. However, external DC blocking capacitors are still required on RF lines to prevent bias feed-through into adjacent circuitry, as specified in Infineon's AN245 application note for RF PIN diode layout.

BAR66E6433HTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: PIN - 1 Pair Series Connection

Voltage - Peak Reverse (Max):: 150V

Current - Max:: 200 mA

Capacitance @ Vr, F:: 0.6pF @ 35V, 1MHz

Resistance @ If, F:: 1.8Ohm @ 5mA, 100MHz

Power Dissipation (Max):: 250 mW

Operating Temperature:: -

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOT23

BAR66E6433HTMA1 FAQ

1.How can I place an order for BAR66E6433HTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR66E6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR66E6433HTMA1 reliable?

The price and inventory of BAR66E6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR66E6433HTMA1 is usually 5 days.

3.What payment methods are accepted for BAR66E6433HTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR66E6433HTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR66E6433HTMA1?

BAR66E6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR66E6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR66E6433HTMA1?

For technical support, including BAR66E6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR66E6433HTMA1 requirements.

6.How does Aetrix verify that BAR66E6433HTMA1 is sourced from the original manufacturer or authorized distributors?

All BAR66E6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR66E6433HTMA1 meets industry standards.

7.What is the process for return or replacement of BAR66E6433HTMA1?

All BAR66E6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR66E6433HTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR66E6433HTMA1 part is unused and in its original packaging.

Return procedure for BAR66E6433HTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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