Infineon Technologies BAR 67-02V E6327

Overview

BAR 67-02V E6327 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation in high-frequency signal paths up to 3 GHz, with 150 V reverse breakdown voltage, 250 mW power dissipation, and low series resistance (0.8 Ω typical at I_F = 10 mA). It serves as a voltage-controlled RF switch in cellular front-end modules.

For engineers reviewing the BAR 67-02V E6327 datasheet, BAR 67-02V E6327 pinout, BAR 67-02V E6327 application, or BAR 67-02V E6327 equivalent, key selection criteria include its low capacitance (0.3 pF at 0 V), fast switching speed (t_ON/t_OFF < 10 ns), DC blocking capability, and SC79-2 package compatibility with high-density RF layouts.

Technical Context

This PIN diode operates in forward-biased (low-resistance) and reverse-biased (low-capacitance) states to route or attenuate RF signals without active amplification. Its intrinsic layer enables carrier lifetime control for predictable switching transients and minimal distortion at UHF frequencies.

Designed for bias-independent RF path control, it requires no gate drive circuitry and functions with simple DC bias networks. The device exhibits stable C_j-V characteristics from 0–150 V and maintains linearity under 250 mW peak RF power handling.

Key Specifications

Pinout & Package

Supplied in SC79-2 (SOD-523) surface-mount package: 1.2 mm × 0.8 mm footprint, 0.5 mm height, cathode-marked anode-cathode configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with BAR 67-02V E6327, MADP-000907-14150T trades voltage headroom for marginally higher capacitance, while BGU7005 reduces external component count at the expense of breakdown safety and package interchangeability.

Availability

BAR 67-02V E6327 is available at Aetrix Electronics and suitable for cellular handset antenna switching, Wi-Fi front-end attenuation, and ISM band transceiver protection requiring stable component supply and consistent RF performance across production lots.

Supply support for BAR 67-02V E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

The BAR series targets high-frequency RF signal conditioning, designed specifically for low-loss, high-isolation switching in mobile communications infrastructure and consumer wireless devices.

FAQ

What is the maximum RF frequency range supported by BAR 67-02V E6327?

The BAR 67-02V E6327 is characterized for operation up to 3 GHz, with verified S-parameter data showing <0.4 dB insertion loss and >25 dB isolation at 2.6 GHz. Performance remains usable to 4 GHz in low-power receive paths, though capacitance and resistance variations increase above 3 GHz.

Can BAR 67-02V E6327 be used in series-shunt RF switch configurations?

Yes - its matched low R_S (0.8 Ω) and low C_j (0.3 pF) enable effective implementation in both series and shunt topologies. In series-shunt configurations, it achieves >35 dB isolation at 900 MHz with <0.5 dB total insertion loss when biased at 10 mA DC.

Is thermal derating required for continuous-wave RF operation?

Yes - at ambient temperatures above 70°C, power dissipation must be reduced linearly from 250 mW at 25°C to 125 mW at 125°C per Infineon's thermal resistance spec (R_thJA = 500 K/W). PCB copper area directly under the SC79-2 pad significantly impacts actual derating curve.

Does BAR 67-02V E6327 require DC blocking capacitors in RF paths?

No - the device is inherently DC-blocking in reverse bias and conducts DC in forward bias. External DC blocking is only needed if the RF source or load cannot tolerate DC offset; the diode itself does not pass DC in OFF state and introduces no DC path in standard switching layouts.