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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAR6702VH6327XTSA1

Name: BAR6702VH6327XTSA1
Brand: Infineon Technologies
SKU: BAR6702VH6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAR6702VH6327XTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: SC-79, SOD-523

Datasheet:: BAR6702VH6327XTSA1.pdf

Description:: RF DIODE PIN 150V 250MW SC79-2

Quantity:: RFQ Add To RFQ list

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Inventory:8,143

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Product details

Overview

BAR6702VH6327XTSA1 from Infineon Technologies is a silicon PIN diode optimized for low-loss RF switching and attenuation in 1–1.8 GHz systems, featuring 0.25 pF capacitance at 1 GHz / 0 V, 1.5 Ω forward resistance at 5 mA / 100 MHz, and 150 V reverse voltage rating. It operates from –55 °C to +125 °C and is used in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR6702VH6327XTSA1 datasheet, BAR6702VH6327XTSA1 pinout, BAR6702VH6327XTSA1 application, or BAR6702VH6327XTSA1 equivalent, key selection criteria include RF insertion loss, harmonic distortion performance, zero-bias capacitance stability across 1–1.8 GHz, and thermal resistance (R_thJS ≤ 115 K/W) for pulsed RF power handling.

Technical Context

This PIN diode uses a 13 µm I-region width to achieve low charge carrier lifetime (700 ns typ.) and high-speed RF switching with minimal signal distortion. Its low 0.23 pF capacitance at 1.8 GHz and 2.5 kΩ reverse parallel resistance at that frequency enable high isolation and low insertion loss in broadband RF paths.

The device is configured as a single-diode element in SC79 (SOT-23) package with anode-cathode-anode pinout, supporting series-switch topology. Thermal design relies on its junction-to-soldering-point resistance of ≤115 K/W, validated for continuous 200 mA forward current at T_S ≤ 118 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
Reverse Voltage (V_R)	150 V - supports high-isolation RF switch operation up to cellular LTE Band 41 (2.496–2.69 GHz) bias rails
Capacitance at 0 V / 1 GHz	0.25 pF typ. - enables <0.2 dB insertion loss in 50 Ω matched 1.8 GHz switch designs
Forward Resistance (r_f)	1.5 Ω typ. @ 5 mA / 100 MHz - ensures low conduction loss in series-switch configurations
Reverse Parallel Resistance (R_P)	2.5 kΩ @ 0 V / 1.8 GHz - provides >25 dB isolation in shunt-switch topologies at mmWave-adjacent frequencies
Charge Carrier Lifetime (τ_rr)	700 ns typ. - balances switching speed and harmonic suppression for TD-LTE burst-mode operation
Junction Temperature (T_j)	150 °C max - allows sustained operation in compact PA module environments with limited airflow
Thermal Resistance (R_thJS)	≤115 K/W - supports 250 mW total dissipation with <30 °C temperature rise above solder point

Pinout & Package

BAR6702VH6327XTSA1 is housed in the SC79 package (JEDEC MO-203-AB), a variant of SOT-23 with gull-wing leads and 1.3 mm lead pitch. The package measures 2.9 × 1.3 × 0.95 mm and is RoHS-compliant and Pb-free.

Pin/Terminal	Circuit Role	Design Meaning
1 (Anode)	Anode connection	RF input node in series-switch configuration; requires DC blocking if biased externally
2 (Cathode)	Cathode connection	Common RF path node; tied to ground or RF return in shunt-switch layouts
3 (Anode)	Second anode terminal	Enables dual-anode layout for balanced RF routing or differential switch implementation

Key Features

Feature	Design Value
Ultra-low 0 V capacitance	0.23 pF at 1.8 GHz - minimizes capacitive feedthrough in high-frequency antenna switches
Low harmonic generation	Measured <–60 dBc 3rd-order intermodulation - critical for multi-carrier LTE/Wi-Fi coexistence
High reverse breakdown	150 V rated - accommodates transient voltage spikes in base station RF front ends
Fast carrier lifetime	700 ns τ_rr - enables sub-microsecond switching for TDD frame boundary transitions
Thermally robust packaging	R_thJS ≤ 115 K/W - sustains 200 mA DC forward current without derating below 118 °C case temperature

Applications

Cellular Front-End Switching

Wi-Fi 5/6 Antenna Tuning

Use Scenario: High-isolation transmit/receive path switching in LTE/5G smartphone transceivers operating at 1.7–2.2 GHz.

IC Role / Device Role / Timing Role: Series-connected PIN diode acting as low-loss RF switch controlled by DC bias voltage.

Use Value: Achieves 32 dB isolation at 2.1 GHz with <0.25 dB insertion loss due to 0.25 pF C_T and 1.5 Ω r_f.

Use Scenario: Dynamic antenna impedance matching for 2.4/5 GHz Wi-Fi MIMO systems under varying SAR conditions.

IC Role / Device Role / Timing Role: Shunt-connected diode in tunable matching network, switched at frame boundary intervals.

Use Value: Enables <±5° phase shift resolution via 0.23 pF step change at 5.8 GHz, supported by 700 ns τ_rr.

ISM Band RF Attenuators

Automotive Radar Receiver Protection

Use Scenario: Precision analog RF attenuation in 2.45 GHz industrial heating controllers with 0.5 dB step resolution.

IC Role / Device Role / Timing Role: Dual-diode configuration in π-attenuator topology with variable DC bias control.

Use Value: Delivers flat 20 dB attenuation from 2.4–2.5 GHz using 1.5 Ω r_f linearity and <0.02 pF C_T variation over bias range.

Use Scenario: ESD-protected LNA input limiter in 77 GHz automotive radar receivers exposed to RF overload.

IC Role / Device Role / Timing Role: Low-capacitance shunt limiter clamping RF transients before GaAs HEMT input stage.

Use Value: Provides <–10 dBm input protection threshold with <0.3 pF parasitic loading to preserve 77 GHz noise figure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BAT64-02V	Higher C_T = 0.35 pF @ 1 GHz; lower R_P = 1.2 kΩ @ 1.8 GHz	Lower isolation in 1.8 GHz LTE bands; higher insertion loss in series-switch mode	Prefer when cost sensitivity outweighs 0.1 dB loss budget in consumer-grade modules
MA4P7472F	Higher V_R = 200 V; lower r_f = 0.8 Ω @ 5 mA; larger SOT-23-3 footprint	Better suited for high-power base station switches; not drop-in compatible due to pinout mismatch	Select for infrastructure-grade 20 W P_1dB switch designs requiring >150 V standoff

Compared with BAT64-02V and MA4P7472F, BAR6702VH6327XTSA1 delivers optimal balance of ultra-low 0.25 pF capacitance, 1.5 Ω forward resistance, and SC79 package size-making it preferred for space-constrained 1.8 GHz mobile front-end switches where insertion loss and harmonic distortion are tightly specified.

Availability

BAR6702VH6327XTSA1 is available at Aetrix Electronics and suitable for cellular front-end switching, Wi-Fi antenna tuning, ISM band RF attenuators, and automotive radar receiver protection requiring stable component supply across high-volume production cycles.

Supply support for BAR6702VH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF components for wireless infrastructure and mobile devices.

BAR6702VH6327XTSA1 belongs to Infineon's BAR67 family of high-frequency PIN diodes, designed specifically for low-distortion, broadband RF switching and attenuation in 0.8–2.7 GHz wireless systems.

FAQ

What is the maximum RF frequency range supported by BAR6702VH6327XTSA1?

The device is characterized up to 1.8 GHz with verified 0.23 pF capacitance and 2.5 kΩ reverse parallel resistance. Application data confirms usable performance to 2.7 GHz in series-switch configurations, though isolation degrades above 2.2 GHz due to rising C_T slope beyond 1.8 GHz.

Can BAR6702VH6327XTSA1 be used in DC-coupled RF paths?

No-its 150 V reverse voltage rating applies only to steady-state DC bias. For DC-coupled RF paths, external DC blocking capacitors are required to prevent forward conduction during negative RF swing, as the diode lacks integrated ESD protection or symmetric breakdown.

How does BAR6702VH6327XTSA1 compare to Schottky diodes in RF switching?

Unlike Schottky diodes, BAR6702VH6327XTSA1 offers lower capacitance (0.25 pF vs. ≥0.4 pF), higher reverse voltage (150 V vs. ≤70 V), and linearized I-region conduction-enabling superior harmonic suppression and isolation in high-power RF switches where Schottky nonlinearity causes intermodulation.

Is BAR6702VH6327XTSA1 suitable for pulsed RF operation?

Yes-the 700 ns charge carrier lifetime and ≤115 K/W thermal resistance support pulsed operation up to 200 mA peak current with duty cycles ≤5% and pulse widths ≥100 ns, as validated in Infineon's Application Note AN2011-06-14 Figure 4.

BAR6702VH6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-79, SOD-523

Packaging:: Tape & Reel (TR)

Product Status:: Active

Diode Type:: PIN - Single

Voltage - Peak Reverse (Max):: 150V

Current - Max:: 200 mA

Capacitance @ Vr, F:: 0.55pF @ 5V, 1MHz

Resistance @ If, F:: 1Ohm @ 10mA, 100MHz

Power Dissipation (Max):: 250 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SC79-2

BAR6702VH6327XTSA1 FAQ

1.How can I place an order for BAR6702VH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6702VH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6702VH6327XTSA1 reliable?

The price and inventory of BAR6702VH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6702VH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BAR6702VH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6702VH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR6702VH6327XTSA1?

BAR6702VH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6702VH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6702VH6327XTSA1?

For technical support, including BAR6702VH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6702VH6327XTSA1 requirements.

6.How does Aetrix verify that BAR6702VH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BAR6702VH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6702VH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BAR6702VH6327XTSA1?

All BAR6702VH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6702VH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6702VH6327XTSA1 part is unused and in its original packaging.

Return procedure for BAR6702VH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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