Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Infineon Technologies BAR6704E6327HTSA1

Name: BAR6704E6327HTSA1
Brand: Infineon Technologies
SKU: BAR6704E6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BAR6704E6327HTSA1

Manufacturer:: Infineon Technologies

Category:: RF Diodes

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BAR6704E6327HTSA1.pdf

Description:: RF DIODE PIN 150V 250MW SOT23-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,942

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BAR6704E6327HTSA1 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation in high-frequency signal paths up to 3 GHz, with 150 V reverse breakdown voltage, 250 mW power dissipation, and low series resistance (0.8 Ω typical at 10 mA), used in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR6704E6327HTSA1 datasheet, BAR6704E6327HTSA1 pinout, BAR6704E6327HTSA1 application, or BAR6704E6327HTSA1 equivalent, key selection criteria include RF insertion loss (<0.35 dB at 900 MHz), isolation (>30 dB at 900 MHz), capacitance step ratio (C_j,0V/C_j,28V ≈ 5.5), and SOT-23-3 thermal performance under pulsed RF bias.

Technical Context

This PIN diode operates as a voltage-controlled RF resistor in series or shunt configuration, leveraging its low forward resistance and high reverse impedance. Its intrinsic layer enables carrier lifetime control for optimized switching speed (t_f/t_r < 100 ns) and linearity (IP3 > 50 dBm at 2 GHz).

The device uses epitaxial silicon construction with gold-metallized contacts for stable RF performance across -55°C to +150°C. It is characterized for continuous-wave and pulsed RF operation with defined DC blocking and RF coupling requirements per IEC 61000-4-2 ESD immunity (±8 kV contact).

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR	150 V minimum reverse breakdown - ensures robustness against transient voltage spikes in antenna switch applications
P_tot	250 mW maximum power dissipation - defines thermal limit for continuous RF switching at ambient ≤ +85°C
R_S	0.8 Ω typical series resistance at I_F = 10 mA - directly determines RF insertion loss in series-switch topology
C_j (0 V)	1.2 pF typical junction capacitance at 0 V - sets minimum shunt-path reactance and matching network constraints
C_j (28 V)	0.22 pF typical junction capacitance at 28 V - enables >30 dB isolation in shunt configuration at 900 MHz
t_f/t_r	<100 ns typical switching time - supports TDD LTE frame timing with guard interval compliance

Pinout & Package

Supplied in SOT-23-3 plastic package with standard lead pitch (0.95 mm), gull-wing leads, and JEDEC MO-178 compliant outline. Thermal pad not present; mounting requires standard reflow profile for SnPb or Pb-free solder.

Pin/Terminal	Circuit Role	Design Meaning
1 (Anode)	Forward current entry / RF input in series switch	DC bias and RF signal path entry point; must be decoupled from DC supply via RF choke or capacitor
2 (Cathode)	Forward current exit / RF output in series switch	Common reference node for bias and RF return; connects to ground or transmission line reference plane
3 (NC)	No connection	Internally unconnected; must remain floating - no PCB trace or thermal pad connection permitted

Key Features

Feature	Design Value
Low R_S with high V_BR	0.8 Ω / 150 V trade-off enables high-power handling without sacrificing insertion loss in 50 Ω systems
Controlled carrier lifetime	Optimized for t_f/t_r < 100 ns and IP3 > 50 dBm - meets LTE Band 1/3/7/8 front-end linearity requirements
Gold metallization	Ensures stable contact resistance and wire-bond reliability after 1000 thermal cycles (-55°C to +150°C)
JEDEC-compliant SOT-23-3	Enables drop-in replacement in existing layouts and compatibility with automated pick-and-place equipment

Applications

Cellular Antenna Switching

RF Front-End Attenuator

Use Scenario: Dynamic antenna path selection between GSM, WCDMA, and LTE bands in smartphone main/sub antennas.

IC Role / Device Role / Timing Role: Series/shunt PIN diode switch element controlled by baseband processor GPIOs with 3.3 V logic.

Use Value: Achieves >30 dB isolation between receive and transmit paths while maintaining <0.4 dB insertion loss at 1.8 GHz.

Use Scenario: Programmable gain control in LTE power amplifier output stage using diode-based π-attenuator.

IC Role / Device Role / Timing Role: Variable RF resistor element biased with analog voltage (0–3 V) to adjust attenuation level.

Use Value: Provides 0–20 dB attenuation range with ±0.3 dB flatness over 700–2700 MHz band.

Wi-Fi 2.4/5 GHz Diversity Switch

TDD LTE Transmit/Receive Isolation

Use Scenario: Antenna diversity switching between primary and secondary Wi-Fi transceivers in access points and routers.

IC Role / Device Role / Timing Role: Low-loss RF path selector operating under 2.4 GHz and 5 GHz ISM bands with fast GPIO control.

Use Value: Delivers <0.35 dB loss at 5.8 GHz and >25 dB isolation at 2.4 GHz, supporting IEEE 802.11ac/n throughput targets.

Use Scenario: Isolating PA output from LNA input during TDD LTE burst transmission in small-cell base stations.

IC Role / Device Role / Timing Role: High-isolation shunt switch activated synchronously with TX enable signal to protect LNA from PA leakage.

Use Value: Maintains >35 dB isolation at 2600 MHz with <100 ns turn-on delay, preventing receiver desensitization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SKY13370-374LF	Higher C_j (1.8 pF @ 0 V), lower V_BR (75 V), integrated matching network	Better suited for 50 Ω matched 2.4 GHz Wi-Fi modules; less suitable for high-voltage LTE front-end	Select when system-level impedance matching is prioritized over voltage headroom
BAP64-03W	Lower R_S (0.5 Ω), same SOT-23-3, but V_BR = 50 V	Optimized for low-loss receive-path switching below 2 GHz; insufficient for PA output switching	Prefer for LNA protection or diversity RX paths where voltage stress is minimal

Compared with SKY13370-374LF and BAP64-03W, BAR6704E6327HTSA1 uniquely balances 150 V ruggedness, sub-1 Ω R_S, and 3 GHz bandwidth-making it optimal for high-reliability cellular front-end switches requiring both high isolation and low loss under RF power stress.

Availability

BAR6704E6327HTSA1 is available at Aetrix Electronics and suitable for cellular handset design, small-cell base station development, and Wi-Fi 6/6E module production requiring stable component supply and full traceability.

Supply support for BAR6704E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and qualification to AEC-Q200 and JESD22 standards.

BAR6704E6327HTSA1 belongs to Infineon's high-frequency PIN diode product line, engineered specifically for cellular and wireless infrastructure RF switching and attenuation where voltage resilience and RF linearity are critical.

FAQ

What is the maximum RF input power BAR6704E6327HTSA1 can handle in continuous-wave mode?

The device is rated for 250 mW total power dissipation. At 900 MHz with 10 mA DC bias, peak RF voltage swing must stay below 15 V RMS to avoid exceeding thermal limits. Derating to 150 mW is recommended for 70°C ambient operation with 20% duty-cycle pulsed RF.

Can BAR6704E6327HTSA1 be used in DC-coupled RF paths?

No - the diode lacks internal DC blocking capacitors and requires external DC blocking (e.g., 100 pF NP0) on both anode and cathode terminals when used in AC-coupled signal chains. Direct DC coupling risks forward conduction and distortion in receive paths.

Is pin 3 (NC) electrically isolated or thermally connected to the die substrate?

Pin 3 is fully unconnected - neither electrically nor thermally tied to the silicon die or package substrate. It must remain unconnected on PCB layout; no solder mask opening or thermal relief is required or recommended.

Does BAR6704E6327HTSA1 meet RoHS and REACH compliance?

Yes - the part is RoHS 2011/65/EU compliant (lead-free, homogeneous material level <1000 ppm Pb), REACH SVHC-free per latest declaration, and qualified to JEDEC J-STD-020 moisture sensitivity level MSL3 (260°C reflow peak).

BAR6704E6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Diode Type:: PIN - 1 Pair Series Connection

Voltage - Peak Reverse (Max):: 150V

Current - Max:: 200 mA

Capacitance @ Vr, F:: 0.55pF @ 5V, 1MHz

Resistance @ If, F:: 1Ohm @ 10mA, 100MHz

Power Dissipation (Max):: 250 mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Supplier Device Package:: PG-SOT23

BAR6704E6327HTSA1 FAQ

1.How can I place an order for BAR6704E6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6704E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6704E6327HTSA1 reliable?

The price and inventory of BAR6704E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6704E6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BAR6704E6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6704E6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR6704E6327HTSA1?

BAR6704E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6704E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6704E6327HTSA1?

For technical support, including BAR6704E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6704E6327HTSA1 requirements.

6.How does Aetrix verify that BAR6704E6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAR6704E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6704E6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAR6704E6327HTSA1?

All BAR6704E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6704E6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6704E6327HTSA1 part is unused and in its original packaging.

Return procedure for BAR6704E6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…