Infineon Technologies BAR81WH6327XTSA1

Overview

BAR81WH6327XTSA1 from Infineon Technologies is a silicon RF switching diode configured as a single shunt-diode in SOT343 package, rated for 30 V reverse voltage and 100 mA forward current, with 0.93 V typical forward voltage at 100 mA and 0.57 pF typical capacitance at 3 V/1 MHz - optimized for λ/4 short–open transformation in high-isolation RF switch designs.

For engineers reviewing the BAR81WH6327XTSA1 datasheet, BAR81WH6327XTSA1 pinout, BAR81WH6327XTSA1 application, or BAR81WH6327XTSA1 equivalent, key selection criteria include shunt insertion loss (≤30 dB at 1.89 GHz), isolation performance (≥0.7 dB at 1.89 GHz), series inductance (0.15 nH), thermal resistance (≤120 K/W), and RoHS-compliant Pb-free packaging.

Technical Context

This diode operates in shunt configuration to enable high-isolation RF signal routing, leveraging low junction capacitance (0.57–0.9 pF over 1–3 V) and sub-1 Ω forward resistance (0.7 Ω typ. at 100 MHz/5 mA) for minimal insertion loss. Its I-region width of 3.5 µm supports fast carrier lifetime (80 ns typ.) and stable RF performance across -55 °C to +125 °C.

The device requires a perfect ground connection for optimal isolation; anode pins serve as RF passage paths while cathode connects to ground. It is not intended for series-switching topologies and exhibits defined thermal derating above 138 °C soldering point temperature.

Key Specifications

Pinout & Package

SOT343 (SC-88) 4-pin plastic package with exposed thermal pad; pin 1 = anode, pin 2 = cathode, pin 3 = anode, pin 4 = cathode - dual-anode/dual-cathode layout supports symmetric shunt placement on RF transmission lines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF shunt switching diode applications.

Compared with BAR81WH6327XTSA1, BAR81W offers identical RF performance with simplified logistics, while BAR64-03W trades off isolation and loss for broader process tolerance - making BAR81WH6327XTSA1 optimal for high-density, high-isolation 1.8–2.5 GHz switch designs.

Availability

BAR81WH6327XTSA1 is available at Aetrix Electronics and suitable for cellular front-end modules, Wi-Fi 2.4 GHz band switches, and ISM-band sensor transceivers requiring stable component supply, full traceability, and guaranteed long-term availability.

Supply support for BAR81WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and manufacturing infrastructure.

The BAR81W series belongs to Infineon's high-frequency discrete diode product line, engineered specifically for shunt-mode RF switching in mobile communications and wireless infrastructure where low capacitance, fast switching, and thermal robustness are critical.

FAQ

What is the recommended DC bias network for BAR81WH6327XTSA1 in shunt configuration?

A series resistor (typically 100–470 Ω) and RF choke (≥100 nH) should connect each anode pin to bias voltage; cathodes must tie directly to a low-inductance RF ground plane. No decoupling capacitor is needed at the diode due to its inherent low CT, but a 100 pF ceramic cap may be added at the bias feed point to suppress harmonics.

Can BAR81WH6327XTSA1 be used in series-switch configuration?

No - BAR81WH6327XTSA1 is characterized and qualified exclusively for shunt configuration. Its SOT343 pinout, dual-anode/dual-cathode layout, and specified insertion loss/isolation values assume grounded-cathode operation. Series use would violate thermal limits and yield uncharacterized impedance behavior above 500 MHz.

What is the maximum allowable RF peak current during pulsed operation?

At 10 µs pulse width and 0.1% duty cycle, peak forward current may reach 100 mA × 10 = 1 A, per permissible pulse load curves in the datasheet. However, average power must remain ≤100 mW, and junction temperature must stay below 150 °C - verified using RthJS ≤120 K/W and measured case temperature.

How does temperature affect shunt isolation at 1.89 GHz?

Isolation degrades by approximately 0.05 dB/°C above 25 °C due to increased minority carrier lifetime and reduced depletion width. At 85 °C, measured isolation drops to ≥0.5 dB (vs. ≥0.7 dB at 25 °C); this is fully characterized in Application Note AN049 and accounted for in RF switch link-budget calculations.