Infineon Technologies BAR8802LRHE6327XTSA1

Overview

BAR8802LRHE6327XTSA1 from Infineon Technologies is a silicon PIN diode optimized for low-current antenna switching in handheld RF front-ends. It delivers 1.5 Ω forward resistance at 1 mA, 0.28 pF capacitance at 0 V / 1 GHz, and 11 dB isolation at 1.8 GHz - enabling high-efficiency RF path selection in 4G/LTE mobile transceivers.

For engineers reviewing the BAR8802LRHE6327XTSA1 datasheet, BAR8802LRHE6327XTSA1 pinout, BAR8802LRHE6327XTSA1 application, or BAR8802LRHE6327XTSA1 equivalent, key selection criteria include RF insertion loss (0.06 dB @ 1.8 GHz, 10 mA), reverse parallel resistance (1.5 kΩ @ 1.8 GHz), charge carrier lifetime (500 ns), and thermal resistance (≤65 K/W junction-to-soldering-point).

Technical Context

This PIN diode operates as a voltage-controlled RF switch in series configuration with 50 Ω impedance matching. Its I-region width of 13 µm enables fast carrier sweep-out and low distortion across 0.9–2.45 GHz bands, supporting LTE Band 1/3/7/40 antenna diversity and MIMO switching.

Designed for zero-bias or low-forward-current control, it achieves <0.1 dB insertion loss and >9 dB isolation at 2.45 GHz while maintaining ≤50 nA reverse leakage at 60 V - critical for battery-powered portable RF systems requiring minimal DC power overhead and high linearity.

Key Specifications

Pinout & Package

Package: TSLP-2-7 (SC79), leadless surface-mount, 0.6 mm × 0.3 mm footprint, 0.23 mm height, single-diode configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode antenna switching applications.

Compared with BAR8802VHE6327XTSA1, the LRH variant offers superior thermal performance for space-constrained mobile designs; versus SKY13370-374LF, it eliminates external bias components and logic interface but requires discrete driver design.

Availability

BAR8802LRHE6327XTSA1 is available at Aetrix Electronics and suitable for LTE smartphone antenna switching, Wi-Fi/Bluetooth coexistence filtering, and GNSS L1/L5 antenna sharing requiring stable component supply and consistent RF performance across production volumes.

Supply support for BAR8802LRHE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon RF switches and high-voltage power devices.

The BAR88 series belongs to Infineon's high-frequency PIN diode product line, engineered specifically for low-distortion, low-power antenna switching in battery-operated wireless terminals.

FAQ

What is the maximum RF input power this diode can handle in series switching configuration?

The BAR8802LRHE6327XTSA1 is rated for 100 mA forward current and 80 V reverse voltage. In typical 50 Ω series-switch applications at 1.8 GHz, it handles peak RF powers up to +33 dBm (2 W) with 10 mA DC bias, based on thermal derating curves showing 100 mA permissible at 133°C soldering point temperature.

Does this diode require a series resistor in the DC bias path?

Yes - a current-limiting resistor is required to set forward bias current (typically 1–10 mA). For 3.3 V supply and 1.5 V VF, a 1.8 kΩ resistor yields ~1 mA bias. The resistor value must be chosen to maintain rf ≤ 2.5 Ω across operating temperature and ensure IR drop does not compromise switching threshold.

Can BAR8802LRHE6327XTSA1 be used in shunt configuration?

Yes - it functions as a shunt switch when cathode is grounded and anode connects to RF line. At 0 V bias, its 0.28 pF capacitance provides high-impedance path; at forward bias, low rf shorts RF to ground. Layout must minimize parasitic inductance in cathode ground path to maintain >9 dB isolation above 2 GHz.

How does temperature affect insertion loss at 1.8 GHz?

Insertion loss increases by ≤0.01 dB over –40°C to +85°C due to rising forward resistance. At 125°C, IL rises to 0.075 dB (vs. 0.06 dB at 25°C) at 10 mA bias, verified by IF vs. TS curves showing <10% forward current reduction across full operating range.