Infineon Technologies BAR 88-02V E6327

Overview

BAR 88-02V E6327 from Infineon Technologies is a silicon PIN diode optimized for low-current antenna switching in handheld RF front-end modules. It delivers 0.28 pF capacitance at 0 V / 1 GHz, 1.5 Ω forward resistance at 1 mA / 100 MHz, and supports 80 V reverse voltage - enabling high-isolation, low-loss RF path control in 4G/LTE smartphone diversity receive and transmit/receive (T/R) switch applications.

For engineers reviewing the BAR 88-02V E6327 datasheet, BAR 88-02V E6327 pinout, BAR 88-02V E6327 application, or BAR 88-02V E6327 equivalent, key selection criteria include RF insertion loss (<0.11 dB @ 1.8 GHz), isolation (>11 dB @ 1.8 GHz), thermal resistance (RthJS ≤ 105 K/W), and SC79 package compatibility with high-density mobile PCB layouts.

Technical Context

This PIN diode operates as a voltage-controlled RF series switch: forward bias reduces series impedance (rf = 1.5 Ω @ 1 mA), while reverse bias maximizes off-state isolation via low junction capacitance (CT = 0.28 pF @ 1 GHz). Its I-region width of 13 µm balances charge carrier lifetime (τrr = 500 ns) and high-frequency response.

The device uses a single-diode, leadless SC79 (TSLP-2-7) configuration with two terminals - anode and cathode - and is rated for 100 mA forward current and 80 V reverse voltage. Thermal design must account for RthJS ≤ 105 K/W and maximum junction temperature of 150°C.

Key Specifications

Pinout & Package

BAR 88-02V E6327 is housed in a leadless SC79 (TSLP-2-7) surface-mount package with two terminals: anode and cathode. The package measures 1.3 mm × 0.8 mm × 0.5 mm and features solderable side-wettable flanks for optical solder-joint inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode antenna switching applications.

Compared with SXARD1-02V and BAR 63-02V, BAR 88-02V E6327 offers the lowest combined CT/rf product (0.42 pF·Ω), enabling superior 1.8 GHz RF switch figure-of-merit - critical for modern smartphone front-end linearity and noise figure targets.

Availability

BAR 88-02V E6327 is available at Aetrix Electronics and suitable for smartphone antenna switching, LTE T/R module design, and Wi-Fi/BT coexistence circuits requiring stable component supply and consistent RF performance across production volumes.

Supply support for BAR 88-02V E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF components for mobile infrastructure and handsets.

BAR 88-02V belongs to Infineon's high-frequency PIN diode product line, engineered specifically for low-loss, high-isolation antenna switching in space-constrained 4G/5G mobile devices.

FAQ

What is the maximum DC forward current rating for BAR 88-02V E6327?

The absolute maximum DC forward current is 100 mA at TA = 25°C. Derating is required above 25°C ambient: the datasheet specifies IF = 100 mA at TS ≤ 123°C, with permissible pulsed current scaling per duty cycle and pulse width per Figure 5. Continuous operation above 70°C ambient requires thermal modeling using RthJS ≤ 105 K/W.

Does BAR 88-02V E6327 require external bias circuitry for RF switching?

Yes - it requires a DC bias network to apply forward voltage (typically 1–3 V) to the anode relative to cathode for ON-state conduction, and zero or reverse bias for OFF-state isolation. A series resistor (e.g., 10 kΩ) and RF choke are commonly used to inject bias while blocking RF leakage into the control line.

Can BAR 88-02V E6327 be used in shunt configuration?

Yes - the device supports both series and shunt configurations. In shunt mode, the cathode connects to RF ground and the anode to the signal path; forward bias shorts the signal to ground (attenuation), while reverse bias presents high impedance (transmission). Isolation degrades slightly vs. series mode due to parasitic package inductance.

Is BAR 88-02V E6327 compliant with JEDEC moisture sensitivity level (MSL) standards?

Yes - BAR 88-02V E6327 is rated MSL Level 1 per JEDEC J-STD-020, meaning it may be stored indefinitely at ≤30°C/60% RH and subjected to standard SnPb or Pb-free reflow profiles without baking. The SC79 package's side-wettable flanks support automated optical inspection of solder joints post-reflow.