Infineon Technologies BAR 88-099LRH E6327

Overview

BAR 88-099LRH E6327 from Infineon Technologies is a silicon PIN diode optimized for low-current antenna switching in handheld RF front-ends, featuring 1.5 Ω typical forward resistance at 1 mA/100 MHz, 0.28 pF capacitance at 0 V/1 GHz, and 15 dB isolation at 0.9 GHz - deployed in cellular handset TR switches and diversity receive paths.

For engineers reviewing the BAR 88-099LRH E6327 datasheet, BAR 88-099LRH E6327 pinout, BAR 88-099LRH E6327 application, or BAR 88-099LRH E6327 equivalent, key selection criteria include RF insertion loss (0.11 dB @ 1.8 GHz), reverse isolation bandwidth (9–15 dB across 0.9–2.45 GHz), and thermal resistance (≤65 K/W junction-to-soldering-point).

Technical Context

This PIN diode operates as a voltage-controlled RF series switch in single-pole configurations, leveraging its low I-region width (13 µm) and fast charge carrier lifetime (500 ns) to enable rapid RF path toggling with minimal signal distortion. Its SC79 package supports high-frequency impedance matching via minimized parasitic inductance (0.4 nH).

The device achieves stable RF performance across –55 °C to +125 °C operating range by maintaining ≤50 nA reverse leakage at 60 V and ≤0.95 V forward voltage at 100 mA - critical for battery-powered antenna tuning circuits where DC bias headroom is constrained.

Key Specifications

Pinout & Package

BAR 88-099LRH E6327 is housed in an SC79 (SOD-323) leadless surface-mount package - 1.3 mm × 0.85 mm × 0.5 mm, anode/cathode marked by polarity dot and "U8" laser marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode antenna switching applications.

Compared with BAR 88-099LRH E6327, BAR 88-02LRH offers identical RF performance with minor marking differentiation, while SKY13350-374LF trades discrete simplicity for integrated control - making the former optimal for cost-sensitive, space-constrained antenna tuning where bias generation is already available.

Availability

BAR 88-099LRH E6327 is available at Aetrix Electronics and suitable for cellular handset design, 5G FEM integration, and Bluetooth beacon development requiring stable component supply and full RoHS compliance.

Supply support for BAR 88-099LRH E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF components for wireless infrastructure and mobile devices.

The BAR88 series belongs to Infineon's high-frequency discrete diode product line, engineered specifically for low-distortion, high-isolation RF switching in battery-powered portable electronics.

FAQ

What is the maximum RF frequency range supported by BAR 88-099LRH E6327?

BAR 88-099LRH E6327 delivers verified RF performance up to 2.45 GHz, with measured insertion loss of 0.06 dB at 1.8 GHz and isolation of 9 dB at 2.45 GHz. Its 0.28 pF capacitance and 1.5 Ω forward resistance maintain signal integrity through the entire Wi-Fi 2.4 GHz band and LTE Band 40, but it is not characterized for operation above 3 GHz.

Can BAR 88-099LRH E6327 be used in shunt-switch configuration?

Yes - BAR 88-099LRH E6327 supports both series and shunt topologies. In shunt configuration, the cathode connects to RF ground and anode to signal path; isolation improves at lower frequencies (15 dB @ 0.9 GHz), though insertion loss increases slightly versus series use due to residual capacitance.

Does BAR 88-099LRH E6327 require external bias circuitry?

Yes - this discrete PIN diode requires an external DC bias network (typically 1–10 mA current source with RF choke and blocking capacitor) to forward-bias the junction. No integrated bias regulation or logic interface is present; design must provide stable 0.75–0.95 V forward drop across the diode under operating conditions.

How does BAR 88-099LRH E6327 compare to GaAs PIN diodes in antenna switching?

BAR 88-099LRH E6327 offers comparable insertion loss and isolation to GaAs diodes below 2.5 GHz but with higher power handling (100 mA IF), superior thermal stability (150 °C Tj), and lower cost. It lacks GaAs' ultra-low 1/f noise and sub-100 ps switching, making it ideal for mainstream mobile handsets rather than radar or test equipment.