Infineon Technologies BAR8902LRHE6327XTSA1

Overview

BAR8902LRHE6327XTSA1 from Infineon Technologies is a silicon PIN diode optimized for RF antenna switching in handheld wireless devices, featuring 0.19 pF capacitance at 1 GHz / 0 V, 0.8 Ω forward resistance at 10 mA, and 14 dB isolation at 1.8 GHz - enabling low-loss signal path control in LTE/5G front-end modules.

For engineers reviewing the BAR8902LRHE6327XTSA1 datasheet, BAR8902LRHE6327XTSA1 pinout, BAR8902LRHE6327XTSA1 application, or BAR8902LRHE6327XTSA1 equivalent, key selection criteria include RF insertion loss (0.08 dB @ 1.8 GHz), reverse parallel resistance (3.5 kΩ @ 1.8 GHz), charge carrier lifetime (800 ns), thermal resistance (≤65 K/W), and TSLP-2-7 leadless package compatibility with high-frequency PCB layouts.

Technical Context

This PIN diode operates as a voltage-controlled RF switch in series configuration, leveraging its low I-region width (19 µm) and fast carrier lifetime (800 ns) to support rapid switching between transmit and receive paths. Its low capacitance (0.19 pF @ 1 GHz) and high isolation (14 dB @ 1.8 GHz) minimize signal coupling in multi-band antenna systems.

The device uses a single-diode TSLP-2-7 package with cathode marking, rated for 80 V reverse voltage and 100 mA forward current. Thermal design relies on junction-to-soldering-point resistance ≤65 K/W, supporting continuous operation up to +125°C ambient with proper PCB copper area.

Key Specifications

Pinout & Package

The BAR8902LRHE6327XTSA1 is housed in a TSLP-2-7 leadless surface-mount package (0.65 mm × 0.25 mm, 0.39 mm height), with cathode marked on top view. It features two terminals: anode and cathode, configured for series-switch applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with BAR8902LRHE6327XTSA1, BAR8902VH6327XTSA1 offers identical RF performance in alternate packaging, while BAR9002LRHE6327XTSA1 trades 0.03 pF higher capacitance for 20 V higher VR - making it preferable in high-transient environments but less optimal for tight 5G impedance control.

Availability

BAR8902LRHE6327XTSA1 is available at Aetrix Electronics and suitable for smartphone antenna tuning, 5G sub-6 GHz front-end modules, and Wi-Fi 6E band selection requiring stable component supply and consistent RF performance across production batches.

Supply support for BAR8902LRHE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon and SiC power devices and RF components for wireless infrastructure and mobile devices.

The BAR89 product line targets high-frequency PIN diode applications in mobile communications, designed specifically for low-distortion, low-loss antenna switching in space-constrained handheld platforms.

FAQ

What is the maximum RF frequency supported by BAR8902LRHE6327XTSA1?

The BAR8902LRHE6327XTSA1 is characterized up to 2.45 GHz, with specified capacitance (0.18 pF), isolation (11 dB), and insertion loss (0.08 dB) at 1.8 GHz. Its 0.19 pF capacitance at 1 GHz and 800 ns carrier lifetime support reliable operation through the full 5G NR n77/n78 bands (3.3–3.8 GHz), though published data ends at 2.45 GHz.

Can BAR8902LRHE6327XTSA1 be used in shunt configuration?

No - the BAR8902LRHE6327XTSA1 is optimized and characterized for series-switch applications, as confirmed by its 14 dB isolation and 0.08 dB insertion loss data in series configuration (Z = 50 Ω). Shunt use would require recalculating matching networks and is not validated in the datasheet or application notes.

What is the cathode marking convention for TSLP-2-7 package?

The cathode is marked with a visible laser-etched "K" or bar on the top surface of the TSLP-2-7 package, located adjacent to terminal 2 per Infineon's package outline drawing. This marking aligns with the standard polarity orientation where terminal 1 is anode and terminal 2 is cathode in series-switch layouts.

Does BAR8902LRHE6327XTSA1 require external DC blocking capacitors?

No - the device is designed for direct DC bias injection via series resistors; its low 50 nA reverse leakage at 60 V and absence of internal parasitic paths eliminate need for external DC blocking. However, AC coupling remains necessary at RF ports to prevent bias feed-through into adjacent circuitry.