Infineon Technologies BAR8902LRHE6433XTMA1

Overview

BAR8902LRHE6433XTMA1 from Infineon is a single silicon PIN diode optimized for RF antenna switching in handheld wireless devices, featuring 0.19 pF capacitance at 1.8 GHz (VR = 0 V), 0.8 Ω forward resistance at 10 mA/100 MHz, and 14 dB isolation at 1.8 GHz - enabling high-efficiency transmit/receive path selection in LTE/5G front-end modules.

For engineers reviewing the BAR8902LRHE6433XTMA1 datasheet, BAR8902LRHE6433XTMA1 pinout, BAR8902LRHE6433XTMA1 application, or BAR8902LRHE6433XTMA1 equivalent, key selection criteria include RF insertion loss (<0.08 dB at 1.8 GHz), reverse breakdown voltage (80 V), thermal resistance (≤65 K/W), and TSLP-2-7 leadless package compatibility with high-density mobile PCB layouts.

Technical Context

This PIN diode operates as a voltage-controlled RF switch in series configuration, leveraging its low I-region width (19 µm) and charge carrier lifetime (800 ns) to achieve fast switching with minimal signal distortion. Its low CT (0.18 pF at 1.8 GHz) and high RP (3.5 kΩ at 1.8 GHz) support broadband operation from 0.9–2.45 GHz.

The device uses a single-anode, cathode-marked TSLP-2-7 package with 0.65 mm pitch and 0.25 mm terminal width, designed for reflow-compatible assembly. Thermal performance is characterized by junction-to-soldering-point resistance ≤65 K/W, enabling stable operation up to 125°C ambient in compact RF modules.

Key Specifications

Pinout & Package

The BAR8902LRHE6433XTMA1 is housed in the TSLP-2-7 (Thin Small Leadless Package) with two terminals: Terminal 1 (anode) and Terminal 2 (cathode), marked by a laser-etched cathode indicator on the top surface. The package has 0.65 mm pitch, 0.25 mm terminal width, and 0.39 mm terminal length, optimized for high-frequency layout integrity and automated placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with BAR8902VH6327XTMA1, BAR8902LRHE6433XTMA1 offers identical RF performance but with updated reel labeling and traceability; versus BAR8902SRHE6433XTMA1, it trades tighter capacitance tolerance and MSL 1 rating for cost-optimized production targeting consumer handset volumes.

Availability

BAR8902LRHE6433XTMA1 is available at Aetrix Electronics and suitable for LTE smartphone antenna switching, 5G sub-6 GHz front-end modules, Wi-Fi 6E diversity routing, and GNSS L1/L5 band filtering requiring stable component supply across high-volume mobile production cycles.

Supply support for BAR8902LRHE6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and manufacturing infrastructure supporting industrial, automotive, and communications markets.

The BAR89 series belongs to Infineon's high-frequency discrete portfolio, engineered specifically for low-loss, high-isolation RF switching in space-constrained mobile and wireless infrastructure applications.

FAQ

What is the maximum RF frequency range supported by BAR8902LRHE6433XTMA1?

The BAR8902LRHE6433XTMA1 is characterized from 0.9 GHz to 2.45 GHz, with measured isolation of 19 dB at 0.9 GHz, 14 dB at 1.8 GHz, and 11 dB at 2.45 GHz. Its 0.18 pF capacitance at 1.8 GHz and 800 ns carrier lifetime support stable operation across LTE Bands 1–41, 5G n77/n78, and Wi-Fi 6E U-NII-5/6/7/8 segments.

Can BAR8902LRHE6433XTMA1 be used in shunt-switch configuration?

Yes - the BAR8902LRHE6433XTMA1 supports both series and shunt configurations. In shunt mode, its 0.19 pF capacitance at 1.8 GHz provides effective RF grounding, and its 3.5 kΩ reverse parallel resistance at 1.8 GHz ensures minimal signal leakage. Layout must maintain symmetric ground vias and controlled impedance traces per Infineon AN077 guidelines.

What is the DC bias requirement for full RF conduction?

Full conduction requires ≥10 mA forward current, producing VF ≈ 0.83–0.9 V at 25°C. At 10 mA, forward resistance drops to 0.8 Ω, minimizing insertion loss. Bias circuit must limit surge current during switching transients; typical design uses 100 Ω series resistor and local 100 nF decoupling near the diode anode.

Does BAR8902LRHE6433XTMA1 meet automotive qualification standards?

No - BAR8902LRHE6433XTMA1 is qualified to industrial temperature range (−55°C to +125°C) and RoHS compliance, but not AEC-Q200. For automotive use, Infineon recommends BAR8902SRHE6433XTMA1 (MSL 1, tighter CT uniformity) or the AEC-Q200-qualified BAR8902TRHE6327XTMA1 variant with extended reliability testing and traceability.