Infineon Technologies BAR9002ELSE6327XTSA1

Overview

BAR9002ELSE6327XTSA1 from Infineon Technologies is a silicon deep trench PIN diode optimized for low-bias-current antenna switching in handheld RF front-ends. It delivers 0.19 pF capacitance at 0 V / 1 GHz, 1.3 Ω forward resistance at 3 mA, and 80 V reverse voltage rating, enabling high-isolation RF path control in LTE/5G mobile transceivers.

For engineers reviewing the BAR9002ELSE6327XTSA1 datasheet, BAR9002ELSE6327XTSA1 pinout, BAR9002ELSE6327XTSA1 application, or BAR9002ELSE6327XTSA1 equivalent, key selection criteria include RF insertion loss (0.11 dB @ 1.8 GHz, 3 mA), isolation (13.5 dB @ 1.8 GHz), harmonic distortion balance, and TSLP-2-7 leadless package compatibility with high-density PCB layouts.

Technical Context

This PIN diode employs a deep-trench isolation structure to minimize parasitic capacitance and carrier lifetime (750 ns), supporting fast RF switching with stable ON/OFF impedance ratios across 0.9–2.45 GHz bands. Its single-diode configuration and cathode-marked TSLP-2-7 package support series-mode antenna switching topologies.

Designed for zero- or low-bias operation, it achieves <0.2 pF capacitance at 1 GHz under 0 V reverse bias while maintaining low series resistance (1.3 Ω typ. @ 100 MHz, 3 mA), enabling minimal signal attenuation in transmit/receive path selection.

Key Specifications

Pinout & Package

TSLP-2-7 is a 2-pin, leadless, surface-mount package with exposed thermal pad, 0.65 mm pitch, and cathode marked on top surface. Dimensions: 0.8 × 0.45 × 0.39 mm (L×W×H), compliant with IPC-7351B footprint standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with SXARD1002Z and BAR6302VH6327XTSA1, BAR9002ELSE6327XTSA1 offers the optimal trade-off of ultra-low capacitance, robust 80 V rating, and industry-standard TSLP-2-7 assembly compatibility-making it preferred for mainstream 5G handset antenna switching where isolation, voltage margin, and manufacturability are jointly critical.

Availability

BAR9002ELSE6327XTSA1 is available at Aetrix Electronics and suitable for mobile antenna switching, front-end module integration, Wi-Fi 6E diversity routing, and GNSS band selection requiring stable component supply and full traceability.

Supply support for BAR9002ELSE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, RF, and automotive ICs, with core expertise in silicon and SiC device physics and high-volume manufacturing.

BAR9002 belongs to Infineon's RF PIN Diode portfolio, engineered specifically for low-bias, high-frequency antenna switching in space-constrained mobile and wireless infrastructure applications.

FAQ

What is the maximum DC forward current rating for BAR9002ELSE6327XTSA1?

The absolute maximum DC forward current is 100 mA at TA = 25°C. Derating applies above 25°C ambient: maximum IF drops to ~60 mA at 85°C and ~35 mA at 125°C, per the IF vs. TS curve in datasheet Figure 5. Continuous operation beyond these limits risks thermal runaway due to the diode's 65 K/W junction-to-solder-point thermal resistance.

Does BAR9002ELSE6327XTSA1 require external DC blocking capacitors in RF series-switch configurations?

No external DC blocking capacitor is required when used in standard series-switch topology with DC bias applied to the cathode. The diode's 80 V reverse breakdown voltage and low IR (<50 nA @ 60 V) ensure stable RF conduction without leakage-induced drift. However, AC coupling remains necessary if the RF source or load cannot tolerate DC offset.

How does the 0.19 pF capacitance at 1 GHz impact matching network design?

A 0.19 pF junction capacitance at 1 GHz corresponds to an impedance of ~840 Ω, allowing simple λ/4 stub or L-section matching with minimal component count. This low value avoids resonance shifts in narrowband GNSS or LTE Band 13 filters and reduces sensitivity to PCB parasitics compared to diodes with >0.3 pF CT.

Can BAR9002ELSE6327XTSA1 be used in anti-parallel configuration like BAR90-098LRH?

No-BAR9002ELSE6327XTSA1 is a single-diode device in TSLP-2-7 package and lacks the dual-die anti-parallel structure of BAR90-098LRH (TSLP-4-7). Attempting anti-parallel use would require external duplication and precise layout symmetry, compromising harmonic cancellation and increasing insertion loss beyond datasheet specifications.