Infineon Technologies BAR9002LRHE6327XTSA1

Overview

BAR9002LRHE6327XTSA1 from Infineon is a silicon deep trench PIN diode optimized for low-bias-current antenna switching in handheld RF front-ends, featuring 0.19 pF capacitance at 1 GHz / 0 V, 1.3 Ω forward resistance at 3 mA / 100 MHz, and 80 V reverse voltage rating. It operates across –55 °C to +125 °C and supports 1.8 GHz LTE band switching with <0.11 dB insertion loss.

For engineers reviewing the BAR9002LRHE6327XTSA1 datasheet, BAR9002LRHE6327XTSA1 pinout, BAR9002LRHE6327XTSA1 application, or BAR9002LRHE6327XTSA1 equivalent, this device is selected for high-isolation, low-loss RF path control in compact mobile transceivers where harmonic distortion balance and RoHS-compliant leadless packaging are critical.

Technical Context

This PIN diode uses a deep trench isolation structure to minimize carrier lifetime (750 ns typ.) and achieve ultra-low junction capacitance below 0.2 pF at RF frequencies up to 2.45 GHz. Its TSLP-2-7 package integrates a single anode-cathode pair with cathode marking and solderable side-wettable flanks.

The device functions as a voltage-controlled RF switch: forward bias (≥3 mA) enables low-resistance conduction (<1.3 Ω), while zero/low reverse bias yields high impedance (>4 kΩ at 1.8 GHz) and >13.5 dB isolation at 1.8 GHz - enabling clean transmit/receive path separation in FEMs.

Key Specifications

Pinout & Package

TSLP-2-7 is a 2-pin, leadless, surface-mount package with exposed thermal pad, 0.65 mm pitch, and cathode-marked top-side identification. Dimensions: 0.925 × 0.39 mm, height ≤ 0.25 mm.

Key Features

Applications

Availability

BAR9002LRHE6327XTSA1 is available at Aetrix Electronics and suitable for mobile RF front-end design, Wi-Fi 6 module development, and GNSS receiver protection requiring stable component supply and full traceability.

Supply support for BAR9002LRHE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon RF switches and GaN power devices.

The BAR90 family targets high-frequency mobile infrastructure and handset applications, designed specifically for low-distortion, low-loss RF switching in space-constrained 4G/5G front-ends.

FAQ

What is the maximum DC forward current rating for BAR9002LRHE6327XTSA1?

The absolute maximum DC forward current is 100 mA at TA = 25 °C. Derating applies above 25 °C: at 85 °C ambient, max IF drops to ~60 mA per thermal curves in datasheet Figure 5. Continuous operation beyond rated limits risks irreversible junction damage due to localized heating in the deep trench structure.

Does BAR9002LRHE6327XTSA1 require external bias circuitry for RF switching?

Yes - it requires a DC bias network: a series RF choke (e.g., 100 nH) to inject forward current (3–10 mA typical), and a shunt capacitor (e.g., 100 pF) to RF-ground the cathode. No integrated bias controller exists; external passive components define switching threshold and transient response.

Can BAR9002LRHE6327XTSA1 be used in parallel configurations?

No - the device is a single-diode element in TSLP-2-7 package. Parallel use would require matched unit die characteristics and precise thermal coupling, which is not supported by datasheet characterization or package design. For anti-parallel functionality, Infineon offers BAR90-098LRH (TSLP-4-7).

What is the recommended PCB footprint for BAR9002LRHE6327XTSA1?

The official footprint uses 0.35 × 0.76 mm solder pads with 0.6 mm center-to-center spacing and 0.275 mm solder mask opening per side. Stencil aperture should be 0.15 mm thick with 0.35 × 0.6 mm openings to ensure reliable side-wettable flank formation and avoid head-in-pillow defects.