Infineon Technologies BAR9002LSE6327XTSA1

Overview

BAR9002LSE6327XTSA1 from Infineon is a silicon deep trench PIN diode optimized for low-bias-current antenna switching in handheld RF front-ends, featuring 0.19 pF capacitance at 1 GHz / 0 V, 1.3 Ω forward resistance at 3 mA / 100 MHz, and 80 V reverse voltage rating. It operates across –55 °C to +125 °C and is packaged in TSLP-2-7 leadless surface-mount format.

For engineers reviewing the BAR9002LSE6327XTSA1 datasheet, BAR9002LSE6327XTSA1 pinout, BAR9002LSE6327XTSA1 application, or BAR9002LSE6327XTSA1 equivalent, this diode is selected for high-isolation, low-loss RF switching in LTE/5G sub-6 GHz handset antenna tuning, where harmonic distortion balance and thermal robustness under pulsed RF drive are critical design factors.

Technical Context

This PIN diode uses a deep-trench isolation structure to minimize parasitic capacitance and carrier lifetime (τ_rr = 750 ns), enabling fast RF switching with stable C_T–V characteristics up to 1.8 GHz. Its single-diode configuration in TSLP-2-7 supports series-mode antenna switching with Z₀ = 50 Ω matching.

Electrical behavior is defined by low forward resistance (1.3 Ω @ 3 mA / 100 MHz), high reverse impedance (>4 kΩ @ 1.8 GHz), and tight capacitance control (0.19 pF typ. @ 0 V / 1 GHz), making it suitable for high-linearity transmit/receive path selection without external bias network complexity.

Key Specifications

Pinout & Package

BAR9002LSE6327XTSA1 is housed in a TSLP-2-7 (Thin Small Leadless Package, 2-pin, 0.65 mm pitch) leadless surface-mount package with cathode marked on top surface. The package footprint complies with Infineon's standard TSLP-2-7 outline (0.8 mm × 0.6 mm × 0.39 mm max height).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode antenna switching applications.

Compared with SXARD1002Z and BAP70-03W, BAR9002LSE6327XTSA1 delivers superior high-frequency isolation and lower insertion loss in minimal footprint-critical for modern multi-antenna smartphone architectures where every 0.05 dB loss directly impacts battery life and data throughput.

Availability

BAR9002LSE6327XTSA1 is available at Aetrix Electronics and suitable for smartphone antenna tuning, LTE band-switching modules, and 5G sub-6 GHz front-end designs requiring stable component supply, consistent parametric binning, and full traceability per lot.

Supply support for BAR9002LSE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF components for mobile infrastructure and consumer devices.

BAR9002LSE6327XTSA1 belongs to Infineon's BAR90 family of deep-trench PIN diodes, engineered specifically for high-isolation, low-loss RF switching in space-constrained handheld applications operating up to 2.45 GHz.

FAQ

What is the maximum DC forward current rating for BAR9002LSE6327XTSA1?

The absolute maximum DC forward current is 100 mA at T_A = 25 °C. Derating applies above 25 °C: at 85 °C ambient, maximum continuous I_F drops to ~60 mA per thermal curves in datasheet Figure 5. Pulse operation permits higher peak currents depending on duty cycle and pulse width, as defined in the permissible pulse load graphs.

Does BAR9002LSE6327XTSA1 require external DC blocking capacitors in RF series-switch configurations?

No external DC blocking capacitors are needed in standard series-switch layouts because the diode's intrinsic capacitance (0.19 pF @ 1 GHz) is sufficiently low to avoid significant impedance mismatch at target frequencies. However, a DC feed choke or bias tee is required to inject forward bias while maintaining RF continuity across the anode–cathode path.

How does the deep trench structure improve RF performance compared to planar PIN diodes?

The deep trench isolation reduces fringing capacitance and suppresses lateral carrier diffusion, resulting in tighter C_T–V tracking and lower r_f dispersion across frequency. This yields more predictable S-parameters above 1 GHz and improved harmonic distortion balance-key for FDD-LTE and 5G NR coexistence in shared antenna systems.

Can BAR9002LSE6327XTSA1 be used in shunt-switch topology?

Yes, it supports shunt-switch use with cathode grounded and anode connected to RF line via series inductor. In this configuration, isolation improves to 18.5 dB @ 0.9 GHz, but insertion loss increases to ~0.25 dB @ 1.8 GHz. Layout must ensure low-inductance cathode grounding and avoid coupling between bias and RF paths.