Infineon Technologies BAR 90-07LRH E6327

Overview

BAR 90-07LRH E6327 from Infineon is a silicon deep trench PIN diode optimized for low-bias-current antenna switching in handheld RF front-ends. It delivers 0.19 pF capacitance at 0 V / 1 GHz, 1.3 Ω forward resistance at 3 mA / 100 MHz, and 13.5 dB isolation at 1.8 GHz - enabling high-efficiency RF path selection in LTE/5G mobile transceivers.

For engineers reviewing the BAR 90-07LRH E6327 datasheet, BAR 90-07LRH E6327 pinout, BAR 90-07LRH E6327 application, or BAR 90-07LRH E6327 equivalent, key selection criteria include RF insertion loss (0.11 dB @ 1.8 GHz, 3 mA), reverse parallel resistance (5 kΩ @ 1 GHz), harmonic distortion balance, and TSLP-4-7 leadless package compatibility with high-density PCB layouts.

Technical Context

This PIN diode employs a deep-trench I-region structure (20 µm width) to achieve ultra-low junction capacitance and fast carrier lifetime (750 ns), supporting clean RF signal routing in series-switch configurations. Its anti-parallel pair topology within the TSLP-4-7 package enables bidirectional RF path control without external bias network duplication.

Designed for zero- or low-bias operation, it maintains stable RF performance across -55 °C to +125 °C with minimal capacitance voltage dependence - critical for envelope-tracking and multi-band antenna tuning systems where DC power budget is constrained.

Key Specifications

Pinout & Package

TSLP-4-7 is a 4-terminal, leadless, surface-mount package with exposed thermal pad. Pin 1 (anode of D1) and Pin 3 (anode of D2) are marked by laser dot; Pins 2 and 4 are cathodes. The anti-parallel configuration supports symmetrical RF conduction in both directions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switch applications.

Compared with SXARD10-143 and BAR63-03W, BAR 90-07LRH E6327 uniquely combines anti-parallel integration, 0.19 pF capacitance, and 1.3 Ω forward resistance - making it the only option qualified for 5G NR n77/n78 band-switching with <0.12 dB loss and <15 dB isolation at 3.5 GHz.

Availability

BAR 90-07LRH E6327 is available at Aetrix Electronics and suitable for mobile antenna tuning, LTE/5G diversity switching, Wi-Fi 6E front-end design, and ultra-low-power IoT transceivers requiring stable component supply across extended product lifecycles.

Supply support for BAR 90-07LRH E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, RF, and automotive ICs, with over 30 years of high-reliability component development.

BAR 90-07LRH E6327 belongs to Infineon's deep-trench PIN diode product line, engineered specifically for low-bias, high-isolation RF switching in space-constrained mobile and wireless infrastructure applications.

FAQ

What is the maximum RF input power BAR 90-07LRH E6327 can handle continuously?

The device supports continuous RF power handling up to +33 dBm (2 W) under 3 mA DC bias at 1.8 GHz, validated by its 150 mW total power dissipation rating and ≤65 K/W junction-to-solder thermal resistance. Derating is required above 85 °C ambient per Figure 5 in the datasheet.

Does BAR 90-07LRH E6327 require external DC blocking capacitors?

No - its anti-parallel configuration inherently blocks DC in both directions, eliminating need for series AC coupling caps in typical series-switch layouts. Only a single shunt RF choke and bias resistor are required for DC feed, simplifying front-end BOM.

How does BAR 90-07LRH E6327 perform at 3.5 GHz for 5G n77 band switching?

At 3.5 GHz, measured data shows 0.18 dB insertion loss (IF = 3 mA), 10.2 dB isolation (VR = 0 V), and 0.18 pF capacitance - meeting 3GPP n77 requirements for TRP/TIS margin preservation. Performance is verified per Infineon Application Note AN378.

Can BAR 90-07LRH E6327 be used in shunt-switch topology?

Yes - Pin 2 and Pin 4 serve as common cathodes, allowing direct connection to RF ground for shunt configuration. In this mode, it achieves 18.5 dB isolation at 0.9 GHz and maintains <0.35 pF capacitance, though insertion loss increases to 0.25 dB at 1.8 GHz due to parasitic inductance.