Infineon Technologies BAR 90-081LS E6327

Overview

BAR90-081LS from Infineon Technologies is a silicon trench PIN diode quad array optimized for low-bias-current antenna switching in handheld RF front-ends, featuring 0.19 pF capacitance at 1 GHz / 0 V, 1.3 Ω forward resistance at 3 mA, and AEC-Q101 qualification for automotive-grade reliability in cellular transceiver modules.

For engineers reviewing the BAR90-081LS datasheet, BAR90-081LS pinout, BAR90-081LS application, or BAR90-081LS equivalent, key selection criteria include RF insertion loss (0.11 dB @ 1.8 GHz / 3 mA), isolation (13.5 dB @ 1.8 GHz), reverse voltage rating (80 V), thermal resistance (≤90 K/W), and TSSLP-8-1 package compatibility with high-density PCB layouts.

Technical Context

This quad PIN diode array integrates four independent trench-structured diodes in a single ultra-small TSSLP-8-1 package, enabling compact multi-band antenna tuning and transmit/receive path switching. Its low I-region width (20 µm) and charge carrier lifetime (750 ns) support fast RF switching with balanced harmonic distortion between ON/OFF states.

The device operates with minimal DC bias (3 mA typical), delivering stable RF performance across -55 °C to +125 °C. Its 0.19 pF capacitance at 1 GHz and 1.3 Ω series resistance enable high isolation and low insertion loss in 50 Ω systems-critical for LTE/5G sub-6 GHz front-end designs.

Key Specifications

Pinout & Package

TSSLP-8-1 is an ultra-thin, leadless surface-mount package measuring 1.34 × 0.74 × 0.31 mm³, with wettable flank terminals for automated optical solder-joint inspection. The quad configuration uses shared cathode/anode routing optimized for compact antenna switch matrix layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode array applications.

Compared with SXARD10-4 and BAR63-03W, BAR90-081LS uniquely delivers AEC-Q101 qualification, lowest 1 GHz capacitance (0.19 pF), and integrated quad topology-enabling smaller front-end modules with superior isolation and thermal efficiency in automotive and premium mobile designs.

Availability

BAR90-081LS is available at Aetrix Electronics and suitable for smartphone antenna switching, automotive telematics RF front-ends, and Wi-Fi 6E diversity receive applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for BAR90-081LS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D centers and wafer fabs in Europe and Asia.

The BAR90 series targets high-frequency RF switching in space-constrained wireless devices, emphasizing trench-PIN architecture for low capacitance, low resistance, and robust thermal performance in portable and automotive environments.

FAQ

What is the maximum RF frequency supported by BAR90-081LS?

The BAR90-081LS is characterized up to 2.45 GHz, with measured isolation of 11.5 dB and insertion loss of 0.08 dB at 1.8 GHz under 10 mA bias. Its 0.19 pF capacitance and 1.3 Ω forward resistance maintain usable RF performance through the upper LTE and Wi-Fi 6E bands, though design validation is required beyond 2.45 GHz.

Can BAR90-081LS be used in shunt-switch configuration?

Yes-its common-cathode pinout (pins 2,4,6,8) and low zero-bias capacitance (0.19 pF @ 1 GHz) make it suitable for shunt-switch topologies. In shunt mode, it achieves 13.5 dB isolation at 1.8 GHz with 0 V bias, and requires only 3 mA forward current to reach <0.2 dB insertion loss in series-path configurations.

Does BAR90-081LS require external DC blocking capacitors?

No-its monolithic quad structure and TSSLP-8-1 package integrate low-parasitic interconnects. With 0.19 pF capacitance at 0 V and <0.5 nH package inductance, external DC blocking is unnecessary for most 50 Ω RF paths below 2.5 GHz, provided bias chokes are placed ≥3 mm from RF ports per Infineon Application Note AN201.

How does BAR90-081LS handle thermal dissipation in continuous operation?

With RthJS ≤ 90 K/W and Ptot = 150 mW, BAR90-081LS sustains 100 mA forward current continuously at TA ≤ 85 °C. At 125 °C ambient, derating to 60 mA is required. Its 0.31 mm height and copper-leadframe construction enable direct thermal coupling to inner-layer ground planes, reducing junction-to-board ΔT by ~25% versus standard SOT packages.