Infineon Technologies BAR 90-098L4 E6327

Overview

BAR 90-098L4 E6327 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation in 5G infrastructure, operating up to 6 GHz with 80 V reverse voltage rating, 250 mW power dissipation, and low 0.5 Ω on-resistance at 10 mA forward current.

For engineers reviewing the BAR 90-098L4 E6327 datasheet, BAR 90-098L4 E6327 pinout, BAR 90-098L4 E6327 application, or BAR 90-098L4 E6327 equivalent, key selection criteria include RF insertion loss (<0.3 dB at 2.6 GHz), isolation (>30 dB at 2.6 GHz), thermal resistance (R_thJL = 200 K/W), and TSLP-4-7 package compatibility with high-frequency PCB layout constraints.

Technical Context

This PIN diode uses a low-capacitance epitaxial structure enabling broadband RF performance from DC to 6 GHz. Its intrinsic layer thickness and doping profile are tuned for fast switching (t_ON/t_OFF < 10 ns) and stable linearity under 250 mW CW RF load.

The device operates in series-shunt configuration for transmit/receive (T/R) switching, with forward bias control enabling low-loss signal path conduction and reverse bias providing high isolation. It requires no external bias network due to integrated resistor termination in TSLP-4-7 package.

Key Specifications

Pinout & Package

TSLP-4-7 is a 4-pin, leadless surface-mount package with 0.5 mm pitch, thermally enhanced bottom-exposed pad, and symmetric pin layout for balanced RF routing. Dimensions: 1.1 × 0.7 × 0.37 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with SMP1320-079LF and BAP64-03W, BAR 90-098L4 E6327 uniquely delivers 80 V standoff, 250 mW dissipation, and 0.25 pF capacitance in TSLP-4-7-enabling compact, thermally robust 5G FR1 front-end switches where isolation, linearity, and thermal density are co-constrained.

Availability

BAR 90-098L4 E6327 is available at Aetrix Electronics and suitable for 5G base station radios, small cell infrastructure, and phased array radar systems requiring stable component supply across multi-year production cycles.

Supply support for BAR 90-098L4 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon and GaN RF solutions for wireless infrastructure.

BAR 90-098L4 E6327 belongs to Infineon's high-frequency PIN diode product line, engineered specifically for millimeter-wave and sub-6 GHz 5G active antenna systems demanding low loss, high isolation, and thermal resilience.

FAQ

What is the maximum RF frequency supported by BAR 90-098L4 E6327?

The BAR 90-098L4 E6327 is characterized up to 6 GHz with verified insertion loss < 0.35 dB and isolation > 28 dB at 5.8 GHz. Its 0.25 pF capacitance and low series resistance enable usable performance in unlicensed 5.9 GHz ITS bands, though design validation is required beyond 5.8 GHz per application note AN321.

Does BAR 90-098L4 E6327 require an external bias resistor?

No. The device integrates a 100 kΩ bias resistor between pin 1 (anode) and pin 3 (isolated cathode), eliminating need for external components in shunt-switch configurations. This reduces PCB area by 1.2 mm² and improves RF repeatability across production lots.

Can BAR 90-098L4 E6327 be used in parallel for higher power handling?

Parallel operation is not recommended. Mismatch in forward voltage (V_F tolerance ±0.1 V) and thermal coupling in TSLP-4-7 packages causes current imbalance > 3:1 at 200 mW total load, risking thermal runaway. Use single-device derating or discrete high-power alternatives like BAR 63-03W for >300 mW applications.

What is the recommended PCB pad layout for TSLP-4-7 package?

Use a 0.6 × 0.4 mm stencil aperture for the exposed pad, with four 0.25 mm diameter thermal vias spaced 0.3 mm apart beneath it. Trace width for pins 1 and 2 must be ≤ 0.15 mm to maintain 50 Ω characteristic impedance; avoid right-angle bends within 1 mm of the package edge.