Infineon Technologies BAR90098LRHE6327XTSA1

Overview

BAR90098LRHE6327XTSA1 from Infineon is a silicon deep trench PIN diode configured as an anti-parallel pair in a leadless TSLP-4-7 package, optimized for low-bias-current antenna switching in handheld RF front-ends. It delivers 0.19 pF capacitance at 1 GHz / 0 V, 1.3 Ω forward resistance at 3 mA / 100 MHz, and 13.5 dB isolation at 1.8 GHz - enabling high-linearity RF path selection in LTE/Wi-Fi diversity antennas.

For engineers reviewing the BAR90098LRHE6327XTSA1 datasheet, BAR90098LRHE6327XTSA1 pinout, BAR90098LRHE6327XTSA1 application, or BAR90098LRHE6327XTSA1 equivalent, key selection criteria include zero-bias capacitance stability across 0.9–2.45 GHz, harmonic distortion balance between ON/OFF states, insertion loss ≤0.11 dB at 1.8 GHz (3 mA), and thermal resistance of 65 K/W to soldering point.

Technical Context

This anti-parallel PIN diode pair operates in series-switch configuration for transmit/receive antenna path isolation. Its deep-trench I-region (20 µm) enables fast carrier lifetime (750 ns) and low charge storage, critical for minimizing harmonic generation during high-speed RF switching.

The device uses a symmetric layout with pins 1/2 forming one diode and pins 3/4 the other, sharing cathodes per internal topology. Reverse parallel resistance exceeds 4 kΩ at 1.8 GHz, supporting stable impedance matching in 50 Ω systems without external bias network tuning.

Key Specifications

Pinout & Package

Package: TSLP-4-7, leadless surface-mount, 1.2 mm × 0.8 mm × 0.39 mm, pin 1 marked by laser dot, cathode-side polarity indicated on top view.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF antenna switching applications.

Compared with BAR9002LRH and BAR9007LRH, BAR90098LRH uniquely integrates matched anti-parallel diodes in one TSLP-4-7 package, delivering superior harmonic balance and eliminating layout-dependent parasitics - critical for carrier-aggregation and multi-standard coexistence.

Availability

BAR90098LRHE6327XTSA1 is available at Aetrix Electronics and suitable for LTE smartphone antenna switching, Wi-Fi 6E diversity front-ends, GNSS coexistence filtering, and UWB impulse radio gating requiring stable component supply across high-volume consumer electronics production.

Supply support for BAR90098LRHE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF switches and high-frequency discretes.

BAR90098LRHE6327XTSA1 belongs to Infineon's BAR90 deep-trench PIN diode product line, engineered specifically for low-voltage, low-distortion antenna switching in space-constrained mobile RF front-ends.

FAQ

What is the maximum DC forward current rating for BAR90098LRHE6327XTSA1?

The absolute maximum DC forward current is 100 mA at T_S ≤ 133 °C. Derating applies above this temperature: at 125 °C board temperature, max continuous IF drops to ~65 mA per the thermal curve in Rev. 2011-06-20 Figure 5. Pulse operation permits higher peak currents depending on duty cycle and pulse width.

Does BAR90098LRHE6327XTSA1 require external DC blocking capacitors in RF path designs?

No external DC blocking capacitors are required when used in series-switch configuration with proper RF choke biasing. The device's 0.18 pF zero-bias capacitance is sufficiently low to avoid signal degradation up to 2.45 GHz; however, AC coupling remains recommended if the RF source/load has DC offset sensitivity.

How does the anti-parallel configuration affect harmonic performance compared to a single BAR90 diode?

The integrated anti-parallel pair ensures symmetrical conduction in both RF half-cycles, reducing even-order harmonics (2nd, 4th) by >15 dB versus single-diode solutions. Measured 3rd-order IMD improves by 8–10 dB in LTE Band 1 FDD operation due to balanced nonlinearity cancellation.

Can BAR90098LRHE6327XTSA1 be used in 5G NR n77/n78 bands (3.3–3.8 GHz)?

Yes - its 0.18 pF capacitance and 1.3 Ω forward resistance scale predictably to 3.5 GHz, yielding simulated insertion loss of 0.14 dB and isolation of 10.2 dB at 3.5 GHz (3 mA). Real-world validation requires matching network optimization per PCB stack-up and adjacent component coupling.