Infineon Technologies BAR 90-099LRH E6327

Overview

BAR 90-099LRH E6327 from Infineon is a silicon deep trench PIN diode optimized for low-bias-current antenna switching in handheld RF front-ends. It delivers 0.19 pF capacitance at 0 V / 1 GHz, 1.3 Ω forward resistance at 3 mA, and 13.5 dB isolation at 1.8 GHz - enabling high-efficiency RF path selection in LTE/5G smartphone TRx modules.

For engineers reviewing the BAR 90-099LRH E6327 datasheet, BAR 90-099LRH E6327 pinout, BAR 90-099LRH E6327 application, or BAR 90-099LRH E6327 equivalent, key selection criteria include RF insertion loss (<0.11 dB @ 1.8 GHz), reverse parallel resistance (4 kΩ @ 1.8 GHz), harmonic distortion balance, and TSLP-2-7 leadless package compatibility with high-density PCB layouts.

Technical Context

This PIN diode operates as a voltage-controlled RF switch in series configuration, leveraging deep-trench isolation to suppress carrier lifetime (τ_rr = 750 ns) and minimize charge storage. Its I-region width (20 µm) and low C_T–V_R slope enable stable impedance matching across 0.9–2.45 GHz bands.

The device uses a single-anode/single-cathode topology in TSLP-2-7 package with cathode marking. It requires DC bias control (IF ≤ 100 mA, VR ≤ 80 V) and exhibits monotonic C_T reduction from 0.35 pF @ 1 MHz to 0.18 pF @ 1.8 GHz under zero bias.

Key Specifications

Pinout & Package

BAR 90-099LRH E6327 is housed in a TSLP-2-7 leadless surface-mount package (0.65 mm × 0.25 mm, 0.39 mm height), with cathode marked on top surface. The package supports reflow soldering per IPC-J-STD-020 and features exposed copper thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with BAR 90-02LRH, BAR 90-099LRH offers lower R_f at typical bias (1.3 Ω vs. 2.0 Ω), reducing insertion loss in high-current Tx paths; versus BAR 90-098LRH, it trades bidirectional capability for smaller footprint and lower cost in unidirectional antenna switches.

Availability

BAR 90-099LRH E6327 is available at Aetrix Electronics and suitable for smartphone antenna switching, Wi-Fi 6E front-end modules, and 5G sub-6 GHz beamforming arrays requiring stable component supply and full traceability.

Supply support for BAR 90-099LRH E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF components for wireless infrastructure and mobile devices.

BAR 90-099LRH E6327 belongs to Infineon's BAR90 deep-trench PIN diode product line, engineered specifically for high-isolation, low-loss RF switching in space-constrained handheld and portable wireless equipment.

FAQ

What is the maximum DC forward current rating for BAR 90-099LRH E6327?

The absolute maximum DC forward current is 100 mA at TA = 25°C. Derating applies above 25°C ambient: continuous operation drops to ~60 mA at 85°C board temperature due to thermal resistance (65 K/W) and junction temperature limit (150°C). Pulse operation supports higher peak currents per the permissible pulse load curves in the datasheet.

Does BAR 90-099LRH E6327 require a DC blocking capacitor in series RF configurations?

No - BAR 90-099LRH E6327 is designed for direct-series connection in RF paths without DC blocking. Its 80 V reverse voltage rating and low IR (<50 nA @ 60 V) prevent bias leakage into RF circuitry. However, a series RF choke is required to isolate DC bias from the RF signal path while maintaining 50 Ω impedance continuity.

How does the TSLP-2-7 package affect thermal performance in high-duty-cycle switching?

The TSLP-2-7 package achieves 65 K/W junction-to-solder-point thermal resistance, enabling reliable operation at 100 mA DC in ambient temperatures up to 85°C. For >10% duty-cycle pulsed RF switching, thermal design must account for transient R_thJS decay - e.g., 0.05 K/W effective resistance for 10 µs pulses - to avoid localized overheating at the I-region.

Can BAR 90-099LRH E6327 be used in 5G mmWave (24–40 GHz) applications?

No - BAR 90-099LRH E6327 is characterized and optimized for sub-6 GHz operation (up to 2.45 GHz). Its 0.18 pF capacitance and 1.3 Ω R_f yield usable performance only below ~3 GHz; above that, parasitic inductance and package resonance degrade isolation and insertion loss. For mmWave, GaAs or CMOS-based switches are recommended.