Infineon Technologies BAR 95-02LS E6327

Overview

BAR 95-02LS E6327 from Infineon Technologies is a silicon PIN diode optimized for RF antenna switch modules in battery-powered mobile handsets. It delivers 0.24 pF capacitance at 1 GHz / 0 V, 1.2 Ω forward resistance at 5 mA, and 500 ns charge carrier lifetime - enabling low-loss, high-isolation RF signal routing in compact front-end designs.

For engineers reviewing the BAR 95-02LS E6327 datasheet, BAR 95-02LS E6327 pinout, BAR 95-02LS E6327 application, or BAR 95-02LS E6327 equivalent, key selection criteria include RF insertion loss (-0.1 dB @ 1.8 GHz), isolation (-12 dB @ 1.8 GHz), thermal resistance (≤95 K/W), and TSSLP-2-1 leadless package compatibility with high-frequency PCB layout constraints.

Technical Context

This PIN diode operates as a voltage-controlled RF switch in series configuration, leveraging its low I-region width (19 µm) and fast carrier lifetime (500 ns) to achieve sub-nanosecond switching transitions. Its reverse parallel resistance (5 kΩ @ 1 GHz) and low capacitance profile support stable impedance matching across 0.9–2.45 GHz bands.

The device uses a single-diode, anode-cathode configured structure in a TSSLP-2-1 package with exposed cathode pad for thermal dissipation. It is rated for 50 V reverse voltage and 100 mA forward current, with junction temperature limited to 150 °C under ≤95 K/W thermal resistance to soldering point.

Key Specifications

Pinout & Package

BAR 95-02LS E6327 is housed in the TSSLP-2-1 leadless surface-mount package (0.62 mm × 0.32 mm, 0.2 mm height), featuring two terminals on a thermally enhanced copper-exposed bottom side. Cathode is marked by laser etching on the top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with SXARD1002Z and BAR63-02VH6327XTSA1, BAR 95-02LS E6327 uniquely balances ultra-low capacitance (0.23 pF), moderate forward resistance (1.2 Ω), and fast switching (500 ns) in the smallest footprint - making it optimal for space-constrained, multi-band mobile ASM designs where both isolation and loss must be simultaneously minimized.

Availability

BAR 95-02LS E6327 is available at Aetrix Electronics and suitable for mobile handset antenna switching, RF front-end modules, Wi-Fi/BT coexistence systems, and compact IoT wireless transceivers requiring stable component supply and consistent RF performance across production volumes.

Supply support for BAR 95-02LS E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and manufacturing infrastructure.

BAR 95-02LS E6327 belongs to Infineon's RF PIN diode product line, engineered specifically for high-frequency antenna switching in battery-powered mobile communication devices operating up to 2.45 GHz.

FAQ

What is the maximum RF frequency range supported by BAR 95-02LS E6327?

The BAR 95-02LS E6327 is characterized up to 2.45 GHz, with verified performance including −10 dB isolation at that frequency and 0.23 pF capacitance at 1.8 GHz. Its 19 µm I-region width and low parasitic inductance support stable operation across GSM (0.8–0.9 GHz), UMTS (1.9–2.2 GHz), and Wi-Fi/Bluetooth (2.4 GHz) bands without de-rating.

Can BAR 95-02LS E6327 be used in shunt configuration?

Yes - though optimized for series switching, BAR 95-02LS E6327 can operate in shunt configuration. At 0 V bias, its 0.24 pF capacitance and 5 kΩ parallel resistance at 1 GHz provide usable attenuation; however, isolation drops to −12 dB at 1.8 GHz versus −17 dB in series mode, requiring careful matching network design.

What is the recommended DC bias voltage for optimal RF performance?

For minimum insertion loss, apply ≥10 mA forward current (VF ≈ 0.9 V). For full isolation in OFF state, maintain VR ≤ 0 V with ≤10 nA leakage at 35 V reverse bias. Bias circuitry must limit dI/dt to avoid triggering minority carrier injection effects that degrade τ_rr-based switching fidelity.

Does BAR 95-02LS E6327 require special PCB layout considerations?

Yes - due to its 0.62 mm × 0.32 mm TSSLP-2-1 footprint, use symmetric 50 Ω microstrip routing, minimize stub length, and connect the exposed cathode pad directly to a solid ground plane. Stencil aperture dimensions (0.24 mm × 0.62 mm) and solder paste volume must follow Infineon's published assembly guidelines to ensure thermal reliability and RF repeatability.