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Vishay General Semiconductor - Diodes Division BAS40-00-HE3-18
- Part No.:
- BAS40-00-HE3-18
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS40-00-HE3-18.pdf
- Description:
- DIODE SCHOTTKY 40V 200MA SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,067
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Product details
Overview
BAS40-00-HE3-18 from Vishay Semiconductors is a single silicon Schottky diode in SOT-23 package, rated for 40 V repetitive peak reverse voltage, 200 mA forward current, and 5 ns reverse recovery time. It delivers low forward voltage (380 mV at 1 mA) and ultra-low leakage (≤100 nA at 30 V), enabling high-efficiency signal clamping and RF detector applications in automotive and industrial power management circuits.
For engineers reviewing the BAS40-00-HE3-18 datasheet, BAS40-00-HE3-18 pinout, BAS40-00-HE3-18 application, or BAS40-00-HE3-18 equivalent, key selection criteria include its AEC-Q101 qualification, 125 °C maximum junction temperature, SOT-23 thermal resistance of 500 K/W, and verified 4–5 pF diode capacitance at 0 V bias - critical for high-frequency switching integrity.
Technical Context
This Schottky diode uses a planar epitaxial construction with PN junction guardring for ESD protection. Its low turn-on voltage and fast recovery are achieved via optimized metal-semiconductor interface and shallow junction design, supporting operation from –55 °C to +125 °C ambient.
The device is characterized under pulsed conditions (tp < 300 μs) for VF and trr, with thermal testing performed on 1.5 mm fiberglass substrate per JEDEC standards. RthJA = 500 K/W reflects standardized PCB layout constraints, not bare-die performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 40 V - Maximum reverse blocking voltage before breakdown; defines safe operating range in clamp and flyback circuits |
| IF | 200 mA continuous - Sustained forward conduction capability without thermal runaway on standard FR-4 layouts |
| trr | 5 ns - Enables >100 MHz switching in detector and sampling applications without significant tail current |
| VF @ 1 mA | 380 mV - Minimizes signal loss in low-current RF detection paths and precision bias networks |
| CD @ 0 V | 4–5 pF - Low junction capacitance preserves bandwidth in 50 Ω RF interfaces and mixer local oscillator coupling |
| IR @ 30 V | ≤100 nA - Ensures negligible leakage in high-impedance sample-and-hold and battery-monitoring nodes |
| Tj max | 125 °C - Confirmed junction temperature limit for AEC-Q101-compliant automotive underhood deployment |
Pinout & Package
Package: SOT-23 - Surface-mount plastic case, 3-terminal, 8.8 mg weight, footprint compatible with JEDEC TO-236AB. Thermal test layout requires 1.5 mm fiberglass substrate with specified copper lead dimensions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Anode) | Forward current entry point | Connected to input/source side in rectifier, clamp, or detector configurations; polarity-sensitive for Schottky conduction |
| 2 (Cathode) | Forward current exit / reverse blocking terminal | Common reference node in single-diode topology; ties to ground or return path in most signal routing applications |
| 3 (Not connected) | No internal connection | Thermal pad or mechanical support only - must remain floating or grounded per layout guidelines; no electrical function |
Key Features
| Feature | Design Value |
|---|---|
| PN junction guardring | ESD protection up to ±8 kV HBM - eliminates need for external TVS in low-energy I/O line clamping |
| AEC-Q101 qualified | Validated for automotive powertrain and body electronics - supports PPAP documentation and long-term reliability requirements |
| Low VF at 1 mA | 380 mV enables accurate DC restoration in sub-100 μA signal paths without offset error accumulation |
| 5 ns trr | Supports clean edge transitions in 100+ MHz clock recovery and pulse shaping circuits without ringing or overshoot |
| SOT-23 thermal profile | RthJA = 500 K/W measured on defined fiberglass test board - enables thermal modeling for derating in sealed enclosures |
Applications
| Automotive Door Module Signal Clamping | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Clamp transient spikes on LIN bus lines during load dump events in door control units. IC Role / Device Role / Timing Role: Single Schottky diode configured as cathode-to-bus, anode-to-ground for bidirectional overvoltage suppression. Use Value: 40 V VRRM and 5 ns trr prevent latch-up while preserving signal integrity across 19.2 kbps LIN timing windows. | Use Scenario: Protect analog front-end inputs of 24-bit delta-sigma ADCs from ESD and inductive kickback in factory-floor pressure sensors. IC Role / Device Role / Timing Role: Input-stage shunt diode limiting voltage excursions to ≤0.4 V above rail. Use Value: 380 mV VF at 1 mA ensures minimal baseline offset; guardring withstands ±8 kV HBM per IEC 61000-4-2. |
| RF Detector in UHF Remote Keyless Entry | Low-Power Battery Voltage Monitor |
Use Scenario: Demodulate 315/433 MHz ASK signals in passive key fob receivers using envelope detection. IC Role / Device Role / Timing Role: Anode-driven zero-bias detector diode feeding high-impedance RC filter. Use Value: 4–5 pF CD and 5 ns trr maintain >40 dB dynamic range at 433 MHz; low IR avoids discharge of hold capacitor. | Use Scenario: Monitor Li-ion cell voltage during sleep mode in portable medical devices with <1 μA quiescent current budget. IC Role / Device Role / Timing Role: Precision forward-voltage reference diode biased at 100 nA for ratiometric measurement against bandgap. Use Value: ≤100 nA IR at 30 V ensures <0.1% error contribution over 10-year shelf life; stable VF supports calibration traceability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SBAT54LT1G | Same SOT-23 package; 30 V VRRM, 200 mA IF, VF = 420 mV @ 1 mA, trr = 4 ns | Limited to 30 V systems; lower VF tolerance but faster trr - suitable where voltage margin is constrained | Select when operating below 30 V and sub-4 ns recovery is required; verify guardring absence does not impact system ESD robustness |
| NSR0230HT1G | SOT-23; 30 V VRRM, 200 mA IF, VF = 370 mV @ 1 mA, IR = 500 nA @ 25 V | Higher leakage limits use in ultra-low-power monitoring; no AEC-Q101 qualification | Prefer for cost-sensitive consumer applications with relaxed reliability and leakage requirements |
Compared with SBAT54LT1G and NSR0230HT1G, BAS40-00-HE3-18 provides higher reverse voltage margin (40 V), guaranteed AEC-Q101 compliance, and tighter leakage control - making it the preferred choice for automotive and industrial designs requiring extended voltage headroom and certified reliability.
Availability
BAS40-00-HE3-18 is available at Aetrix Electronics and suitable for automotive door modules, industrial sensor interfaces, RF detectors, and low-power battery monitors requiring stable component supply across multi-year production cycles.
Supply support for BAS40-00-HE3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, headquartered in Malvern, PA, with design and manufacturing operations across the Americas, Europe, and Asia.
The BAS40 series belongs to Vishay's small-signal Schottky diode product line, engineered specifically for high-speed, low-loss signal routing and protection in automotive, industrial, and communications systems where low VF, fast trr, and AEC-Q101 reliability are mandatory.
FAQ
What is the AEC-Q101 qualification status of BAS40-00-HE3-18?
BAS40-00-HE3-18 is explicitly qualified to AEC-Q101 standards, as confirmed by Vishay's ordering code suffix "-HE3". This certification covers stress testing for temperature cycling, humidity bias, mechanical shock, and ESD - validating its suitability for automotive powertrain and body electronics applications where long-term reliability under thermal and vibration stress is required. The qualification applies specifically to the HE3 variant, not the base-E3 version.
Does BAS40-00-HE3-18 have a grounded thermal pad or exposed metal slug?
No, BAS40-00-HE3-18 in SOT-23 package has no thermal pad or exposed metal slug. Pin 3 is internally unconnected and serves only as a mechanical support structure. Thermal dissipation relies entirely on conduction through pins 1 and 2 into the PCB copper; the 500 K/W RthJA value assumes the JEDEC-standard fiberglass test board layout with defined copper thickness and trace geometry.
What is the maximum allowable forward surge current for BAS40-00-HE3-18?
The maximum allowable forward surge current for BAS40-00-HE3-18 is 600 mA, specified for pulse duration tp < 1 s under non-repetitive conditions. This rating assumes ambient temperature of 25 °C and is derived from thermal mass limitations of the die and bond wires. For repetitive surges, duty cycle and average power must be evaluated against the 200 mW total power dissipation limit and 500 K/W thermal resistance.
How does the PN junction guardring in BAS40-00-HE3-18 improve system-level ESD robustness?
The PN junction guardring in BAS40-00-HE3-18 provides intrinsic protection against electrostatic discharge by diverting high-voltage transients away from the active Schottky junction. It enables the device to withstand ≥8 kV human-body-model (HBM) ESD events without degradation, eliminating the need for external TVS diodes in many low-energy signal-line protection schemes - reducing BOM count and PCB area in space-constrained automotive and industrial modules.
Can BAS40-00-HE3-18 be used in place of BAS40-00-E3-18 in an existing design?
Yes, BAS40-00-HE3-18 is a direct replacement for BAS40-00-E3-18 in terms of pinout, package, and electrical specifications, with the sole functional difference being AEC-Q101 qualification. All absolute maximum ratings, thermal characteristics, and electrical parameters are identical between the two variants. No layout or schematic changes are needed when upgrading from E3 to HE3 for enhanced automotive reliability assurance.
BAS40-00-HE3-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 50 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 30 V
- Capacitance @ Vr, F:
- 5pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Operating Temperature - Junction:
- 125°C (Max)
BAS40-00-HE3-18 FAQ
1.How can I place an order for BAS40-00-HE3-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS40-00-HE3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS40-00-HE3-18 reliable?
The price and inventory of BAS40-00-HE3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40-00-HE3-18 is usually 5 days.
3.What payment methods are accepted for BAS40-00-HE3-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40-00-HE3-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS40-00-HE3-18?
BAS40-00-HE3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS40-00-HE3-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS40-00-HE3-18?
For technical support, including BAS40-00-HE3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40-00-HE3-18 requirements.
6.How does Aetrix verify that BAS40-00-HE3-18 is sourced from the original manufacturer or authorized distributors?
All BAS40-00-HE3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40-00-HE3-18 meets industry standards.
7.What is the process for return or replacement of BAS40-00-HE3-18?
All BAS40-00-HE3-18 units undergo pre-shipment inspection (PSI). If there is an issue with BAS40-00-HE3-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS40-00-HE3-18 part is unused and in its original packaging.
Return procedure for BAS40-00-HE3-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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