Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division BAS70-00-HE3-18

Part No.:
BAS70-00-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBAS70-00-HE3-18.pdf
Description:
DIODE SCHOTTKY 70V 200MA SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,670

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BAS70-00-HE3-18 from Vishay Semiconductors is a single-channel Schottky diode in SOT-23 package, rated for 70 V repetitive peak reverse voltage, 200 mA forward continuous current, and 5 ns reverse recovery time. It features low forward voltage (410 mV at 1.0 mA), 2 pF diode capacitance at 0 V, and AEC-Q101 qualification for automotive use.

For engineers reviewing the BAS70-00-HE3-18 datasheet, BAS70-00-HE3-18 pinout, BAS70-00-HE3-18 application, or BAS70-00-HE3-18 equivalent, key selection criteria include fast switching performance in low-voltage signal clamping, low-leakage operation below 100 nA at 50 V, and thermal resistance of 500 K/W in standard SOT-23 layout.

Technical Context

This discrete Schottky diode uses a planar epitaxial construction with PN junction guard ring for ESD protection. Its 70 V VRRM and 125 °C maximum junction temperature support operation in automotive power rail monitoring and low-power logic interface circuits.

The device delivers 410 mV forward voltage at 1 mA and 1000 mV at 15 mA, enabling efficient voltage translation and level shifting in battery-powered sensor nodes where leakage must stay below 100 nA at 50 V reverse bias.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM70 V - supports reverse blocking in 48 V automotive subsystems and 24 V industrial control inputs
IF200 mA continuous - sufficient for signal routing and low-current clamp applications without derating
trr5 ns - enables clean edge handling in digital signal conditioning up to ~70 MHz
VF @ 1 mA410 mV - minimizes voltage drop in precision reference clamping and analog front-end protection
CD @ 0 V2 pF - ensures minimal capacitive loading on high-impedance sensor outputs and RF detector nodes
IR @ 50 V100 nA max - maintains signal integrity in high-resistance bias networks and battery monitor dividers

Pinout & Package

Package: SOT-23 - surface-mount, 3-terminal plastic package with 8.8 mg mass and standard footprint per Vishay doc 6.541-5014.01-4.

Pin/TerminalCircuit RoleDesign Meaning
1AnodeForward current entry point; connects to higher-potential node in clamping or rectification path
2CathodeForward current exit and reverse-blocking terminal; ties to reference or ground plane
3Case / Heat SinkElectrically connected to cathode; provides thermal path and mechanical anchoring on PCB

Key Features

FeatureDesign Value
Low VF at 1 mA410 mV enables accurate clamping of sub-1 V logic signals without forward conduction error
AEC-Q101 qualifiedValidated for automotive under-hood and infotainment applications per stress test requirements
PN junction guard ringProvides ESD robustness > 8 kV HBM, protecting against assembly and system-level electrostatic events
5 ns trrSupports high-speed sampling in ADC input protection and pulse-width modulated feedback paths

Applications

Automotive Sensor Signal ConditioningUSB Port ESD Protection

Use Scenario: Clamping transient spikes on LIN bus or analog sensor outputs in engine control modules.

IC Role / Device Role / Timing Role: Discrete Schottky clamp diode placed between signal line and VCC/GND rails.

Use Value: 5 ns trr prevents signal distortion during fast transients; 100 nA IR avoids DC offset in millivolt-level thermistor bridges.

Use Scenario: Bidirectional ESD protection on USB 2.0 D+/D− lines near connector.

IC Role / Device Role / Timing Role: Low-capacitance (2 pF) Schottky diode shunting ESD pulses to VCC and GND.

Use Value: 2 pF CD preserves signal integrity up to 480 Mbps; guard ring ensures > 8 kV HBM immunity without external TVS.

Low-Power Battery Monitor InputRF Detector Bias Network

Use Scenario: Voltage divider input protection in lithium-ion battery fuel gauges operating down to 2.5 V.

IC Role / Device Role / Timing Role: Reverse-biased clamp limiting overvoltage on high-impedance ADC input.

Use Value: 100 nA IR prevents measurable current injection into 10 MΩ+ divider networks; 70 V VRRM covers worst-case surge conditions.

Use Scenario: DC bias feed and RF choke isolation in 2.4 GHz Wi-Fi detector circuits.

IC Role / Device Role / Timing Role: Low-CD Schottky used as RF blocking diode in bias-T topology.

Use Value: 2 pF CD yields > 30 dB isolation at 2.4 GHz; 410 mV VF minimizes DC loss in bias path.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SBAT54LT1GSame SOT-23 package; 30 V VRRM, 200 mA IF, 1.5 pF CD, but not AEC-Q101 qualifiedLimited to commercial-grade portable electronics; unsuitable for automotive under-hood deploymentSelect when cost sensitivity outweighs automotive qualification and 70 V blocking is unnecessary
NSR0230HT1G30 V VRRM, 200 mA IF, 2.5 pF CD, 4 ns trr, AEC-Q101 qualifiedLower VRRM restricts use to ≤24 V systems; slightly higher capacitance affects RF performancePrefer for ultra-fast recovery needs in 12 V automotive body electronics where 70 V margin is excessive

Compared with SBAT54LT1G and NSR0230HT1G, the BAS70-00-HE3-18 uniquely combines 70 V blocking, AEC-Q101 qualification, and 2 pF capacitance-making it optimal for high-reliability 48 V automotive signal conditioning where both voltage margin and RF transparency matter.

Availability

BAS70-00-HE3-18 is available at Aetrix Electronics and suitable for automotive sensor interfaces, USB port protection, battery monitor inputs, and RF detector bias networks requiring stable component supply across production lifecycles.

Supply support for BAS70-00-HE3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, headquartered in Malvern, PA, with design and manufacturing operations across the Americas, Europe, and Asia.

The BAS70 family was developed specifically for high-speed, low-leakage signal routing in automotive and industrial electronics, emphasizing AEC-Q101 reliability, tight parametric consistency, and SOT-23 manufacturability.

FAQ

What is the maximum junction temperature rating for BAS70-00-HE3-18?

The BAS70-00-HE3-18 has a maximum junction temperature (Tj) of 125 °C, verified per Vishay Document Number 85702 Rev. 2.2. This rating allows reliable operation in under-hood automotive environments and industrial enclosures without active cooling. The BAS70-00-HE3-18 achieves this with a thermal resistance of 500 K/W from junction to ambient under standard SOT-23 mounting conditions.

Is BAS70-00-HE3-18 RoHS-compliant and halogen-free?

Yes, the BAS70-00-HE3-18 is RoHS-compliant and halogen-free per Vishay's material categorization standard (www.vishay.com/doc?99912). The "HE3" suffix explicitly denotes AEC-Q101 qualification and full RoHS compliance. The BAS70-00-HE3-18 meets JEDEC JS709E and IEC 61249-2-21 requirements for bromine and chlorine content.

What is the reverse recovery time (trr) of BAS70-00-HE3-18 and how is it measured?

The BAS70-00-HE3-18 has a typical reverse recovery time (trr) of 5 ns, measured under IF = IR = 10 mA, iR = 1 mA, RL = 100 Ω per Vishay Document 85702. This value reflects actual switching behavior in high-frequency signal paths. The BAS70-00-HE3-18 achieves this speed due to its Schottky barrier structure, eliminating minority-carrier storage delay inherent in PN diodes.

Does BAS70-00-HE3-18 have integrated ESD protection?

Yes, the BAS70-00-HE3-18 incorporates a PN junction guard ring that provides intrinsic ESD robustness exceeding 8 kV per Human Body Model (HBM), as confirmed in Vishay's AEC-Q101 qualification testing. This feature eliminates the need for external TVS devices in many low-energy transient scenarios. The BAS70-00-HE3-18 leverages this guard ring to protect against assembly and system-level electrostatic discharge without degrading forward characteristics.

What is the forward voltage (VF) of BAS70-00-HE3-18 at 15 mA, and why does it differ from the 1 mA value?

The BAS70-00-HE3-18 exhibits a forward voltage of 1000 mV at 15 mA, compared to 410 mV at 1 mA, due to the exponential I–V relationship of Schottky junctions and series resistance effects. This increase is fully specified in Vishay Document 85702 and reflects real-world behavior in moderate-current clamp or bias applications. Designers must use the 1000 mV value when sizing current-limiting resistors for 15 mA operation in the BAS70-00-HE3-18.

BAS70-00-HE3-18 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
70 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 50 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
5 ns
Current - Reverse Leakage @ Vr:
100 nA @ 30 V
Capacitance @ Vr, F:
2pF @ 1V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Operating Temperature - Junction:
125°C (Max)

BAS70-00-HE3-18 FAQ

1.How can I place an order for BAS70-00-HE3-18 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS70-00-HE3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS70-00-HE3-18 reliable?

The price and inventory of BAS70-00-HE3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-00-HE3-18 is usually 5 days.

3.What payment methods are accepted for BAS70-00-HE3-18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-00-HE3-18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS70-00-HE3-18?

BAS70-00-HE3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS70-00-HE3-18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS70-00-HE3-18?

For technical support, including BAS70-00-HE3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-00-HE3-18 requirements.

6.How does Aetrix verify that BAS70-00-HE3-18 is sourced from the original manufacturer or authorized distributors?

All BAS70-00-HE3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-00-HE3-18 meets industry standards.

7.What is the process for return or replacement of BAS70-00-HE3-18?

All BAS70-00-HE3-18 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-00-HE3-18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS70-00-HE3-18 part is unused and in its original packaging.

Return procedure for BAS70-00-HE3-18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAS70-00-HE3-18 Tags

  • BAS70-00-HE3-18
  • BAS70-00-HE3-18 PDF
  • BAS70-00-HE3-18 Datasheet
  • BAS70-00-HE3-18 Specifications
  • BAS70-00-HE3-18 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division BAS70-00-HE3-18
  • Buy BAS70-00-HE3-18
  • BAS70-00-HE3-18 Price
  • BAS70-00-HE3-18 Distributor
  • BAS70-00-HE3-18 Supplier
  • BAS70-00-HE3-18 Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER